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Title: Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane

Abstract

Tunable spin transport in nanodevices is highly desirable to spintronics. Here, we predict existence of quantum spin Hall effects and tunable spin transport in As-graphane, based on first-principle density functional theory and tight binding calculations. Monolayer As-graphane is constituted by using As adsorbing on graphane with honeycomb H vacancies. Owing to the surface strain, monolayer As-graphane nanoribbons will self-bend toward the graphane side. The naturally curved As-graphane nanoribbons then exhibit unique spin transport properties, distinctively different from the flat ones, which is a two-dimensional topological insulator. Under external stress, one can realize tunable spin transport in curved As-graphane nanoribon arrays. Such intriguing mechanical bending induced spin flips can offer promising applications in the future nanospintronics devices.

Authors:
ORCiD logo [1];  [2];  [3];  [3];  [4];  [5];  [2];  [6]
  1. Univ. of Electronic Science and Technology of China, Chengdu (China); Univ. of Utah, Salt Lake City, UT (United States)
  2. Univ. of Puerto Rico, Mayaguez (Puerto Rico)
  3. Univ. of Utah, Salt Lake City, UT (United States)
  4. Beijing Computational Science Research Center (China); Univ. of Utah, Salt Lake City, UT (United States)
  5. Univ. of Electronic Science and Technology of China, Chengdu (China)
  6. Univ. of Utah, Salt Lake City, UT (United States); Collaborative Innovation Center of Quantum Matter, Beijing (China)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
OSTI Identifier:
1484735
Grant/Contract Number:  
FG02-04ER46148
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 17; Journal Issue: 7; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
Topological insulator; tunable spin transport; graphane; first-principles calculations

Citation Formats

Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., and Liu, Feng. Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane. United States: N. p., 2017. Web. doi:10.1021/acs.nanolett.7b01438.
Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., & Liu, Feng. Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane. United States. doi:10.1021/acs.nanolett.7b01438.
Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., and Liu, Feng. Mon . "Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane". United States. doi:10.1021/acs.nanolett.7b01438. https://www.osti.gov/servlets/purl/1484735.
@article{osti_1484735,
title = {Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane},
author = {Zhang, L. Z. and Zhai, F. and Jin, Kyung-Hwan and Cui, B. and Huang, Bing and Wang, Zhiming and Lu, J. Q. and Liu, Feng},
abstractNote = {Tunable spin transport in nanodevices is highly desirable to spintronics. Here, we predict existence of quantum spin Hall effects and tunable spin transport in As-graphane, based on first-principle density functional theory and tight binding calculations. Monolayer As-graphane is constituted by using As adsorbing on graphane with honeycomb H vacancies. Owing to the surface strain, monolayer As-graphane nanoribbons will self-bend toward the graphane side. The naturally curved As-graphane nanoribbons then exhibit unique spin transport properties, distinctively different from the flat ones, which is a two-dimensional topological insulator. Under external stress, one can realize tunable spin transport in curved As-graphane nanoribon arrays. Such intriguing mechanical bending induced spin flips can offer promising applications in the future nanospintronics devices.},
doi = {10.1021/acs.nanolett.7b01438},
journal = {Nano Letters},
number = 7,
volume = 17,
place = {United States},
year = {2017},
month = {6}
}

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