Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane
Abstract
Tunable spin transport in nanodevices is highly desirable to spintronics. Here, we predict existence of quantum spin Hall effects and tunable spin transport in As-graphane, based on first-principle density functional theory and tight binding calculations. Monolayer As-graphane is constituted by using As adsorbing on graphane with honeycomb H vacancies. Owing to the surface strain, monolayer As-graphane nanoribbons will self-bend toward the graphane side. The naturally curved As-graphane nanoribbons then exhibit unique spin transport properties, distinctively different from the flat ones, which is a two-dimensional topological insulator. Under external stress, one can realize tunable spin transport in curved As-graphane nanoribon arrays. Such intriguing mechanical bending induced spin flips can offer promising applications in the future nanospintronics devices.
- Authors:
-
- Univ. of Electronic Science and Technology of China, Chengdu (China); Univ. of Utah, Salt Lake City, UT (United States)
- Univ. of Puerto Rico, Mayaguez (Puerto Rico)
- Univ. of Utah, Salt Lake City, UT (United States)
- Beijing Computational Science Research Center (China); Univ. of Utah, Salt Lake City, UT (United States)
- Univ. of Electronic Science and Technology of China, Chengdu (China)
- Univ. of Utah, Salt Lake City, UT (United States); Collaborative Innovation Center of Quantum Matter, Beijing (China)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
- OSTI Identifier:
- 1484735
- Grant/Contract Number:
- FG02-04ER46148
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 17; Journal Issue: 7; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Topological insulator; tunable spin transport; graphane; first-principles calculations
Citation Formats
Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., and Liu, Feng. Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane. United States: N. p., 2017.
Web. doi:10.1021/acs.nanolett.7b01438.
Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., & Liu, Feng. Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane. United States. doi:10.1021/acs.nanolett.7b01438.
Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., and Liu, Feng. Mon .
"Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane". United States. doi:10.1021/acs.nanolett.7b01438. https://www.osti.gov/servlets/purl/1484735.
@article{osti_1484735,
title = {Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane},
author = {Zhang, L. Z. and Zhai, F. and Jin, Kyung-Hwan and Cui, B. and Huang, Bing and Wang, Zhiming and Lu, J. Q. and Liu, Feng},
abstractNote = {Tunable spin transport in nanodevices is highly desirable to spintronics. Here, we predict existence of quantum spin Hall effects and tunable spin transport in As-graphane, based on first-principle density functional theory and tight binding calculations. Monolayer As-graphane is constituted by using As adsorbing on graphane with honeycomb H vacancies. Owing to the surface strain, monolayer As-graphane nanoribbons will self-bend toward the graphane side. The naturally curved As-graphane nanoribbons then exhibit unique spin transport properties, distinctively different from the flat ones, which is a two-dimensional topological insulator. Under external stress, one can realize tunable spin transport in curved As-graphane nanoribon arrays. Such intriguing mechanical bending induced spin flips can offer promising applications in the future nanospintronics devices.},
doi = {10.1021/acs.nanolett.7b01438},
journal = {Nano Letters},
number = 7,
volume = 17,
place = {United States},
year = {2017},
month = {6}
}
Web of Science
Works referencing / citing this record:
Evolution of the topological properties of two-dimensional group IVA materials and device design
journal, January 2018
- Yu, Xiang-Long; Wu, Jiansheng
- Physical Chemistry Chemical Physics, Vol. 20, Issue 4