Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane

doi:10.1021/acs.nanolett.7b01438

Title: Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane

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Abstract

Tunable spin transport in nanodevices is highly desirable to spintronics. Here, we predict existence of quantum spin Hall effects and tunable spin transport in As-graphane, based on first-principle density functional theory and tight binding calculations. Monolayer As-graphane is constituted by using As adsorbing on graphane with honeycomb H vacancies. Owing to the surface strain, monolayer As-graphane nanoribbons will self-bend toward the graphane side. The naturally curved As-graphane nanoribbons then exhibit unique spin transport properties, distinctively different from the flat ones, which is a two-dimensional topological insulator. Under external stress, one can realize tunable spin transport in curved As-graphane nanoribon arrays. Such intriguing mechanical bending induced spin flips can offer promising applications in the future nanospintronics devices.

Authors:

^[1]; Zhai, F. ^[2]; Jin, Kyung-Hwan ^[3]; Cui, B. ^[3]; Huang, Bing ^[4]; Wang, Zhiming ^[5]; Lu, J. Q. ^[2]; Liu, Feng ^[6]

Univ. of Electronic Science and Technology of China, Chengdu (China); Univ. of Utah, Salt Lake City, UT (United States)
Univ. of Puerto Rico, Mayaguez (Puerto Rico)
Univ. of Utah, Salt Lake City, UT (United States)
Beijing Computational Science Research Center (China); Univ. of Utah, Salt Lake City, UT (United States)
Univ. of Electronic Science and Technology of China, Chengdu (China)
Univ. of Utah, Salt Lake City, UT (United States); Collaborative Innovation Center of Quantum Matter, Beijing (China)

Publication Date:: 2017-06-19

Research Org.:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)

OSTI Identifier:: 1484735

Grant/Contract Number:: FG02-04ER46148

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 17; Journal Issue: 7; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: Topological insulator; tunable spin transport; graphane; first-principles calculations

Citation Formats


                    Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., and Liu, Feng. Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane.  United States: N. p., 2017. 
        Web.  doi:10.1021/acs.nanolett.7b01438.

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                    Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., & Liu, Feng. Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane.  United States.  doi:10.1021/acs.nanolett.7b01438.

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                    Zhang, L. Z., Zhai, F., Jin, Kyung-Hwan, Cui, B., Huang, Bing, Wang, Zhiming, Lu, J. Q., and Liu, Feng. Mon .  
        "Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane".  United States.  doi:10.1021/acs.nanolett.7b01438.  https://www.osti.gov/servlets/purl/1484735.

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@article{osti_1484735,

  title        = {Quantum Spin Hall Effect and Tunable Spin Transport in As-Graphane},

  author       = {Zhang, L. Z. and Zhai, F. and Jin, Kyung-Hwan and Cui, B. and Huang, Bing and Wang, Zhiming and Lu, J. Q. and Liu, Feng},

  abstractNote = {Tunable spin transport in nanodevices is highly desirable to spintronics. Here, we predict existence of quantum spin Hall effects and tunable spin transport in As-graphane, based on first-principle density functional theory and tight binding calculations. Monolayer As-graphane is constituted by using As adsorbing on graphane with honeycomb H vacancies. Owing to the surface strain, monolayer As-graphane nanoribbons will self-bend toward the graphane side. The naturally curved As-graphane nanoribbons then exhibit unique spin transport properties, distinctively different from the flat ones, which is a two-dimensional topological insulator. Under external stress, one can realize tunable spin transport in curved As-graphane nanoribon arrays. Such intriguing mechanical bending induced spin flips can offer promising applications in the future nanospintronics devices.},

  doi          = {10.1021/acs.nanolett.7b01438},

  journal      = {Nano Letters},

  number       = 7,

  volume       = 17,

  place        = {United States},

  year         = {2017},

  month        = {6}

}

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DOI: 10.1021/acs.nanolett.7b01438

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