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Title: Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width

Authors:
ORCiD logo [1];  [1];  [2];  [1]
  1. Department of Electrical and Computer Engineering, University of California, Davis CA 95616 USA
  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara CA 93106 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1484406
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 1; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, and Chowdhury, Srabanti. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width. United States: N. p., 2018. Web. doi:10.1002/aelm.201800689.
Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, & Chowdhury, Srabanti. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width. United States. doi:10.1002/aelm.201800689.
Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, and Chowdhury, Srabanti. Tue . "Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width". United States. doi:10.1002/aelm.201800689.
@article{osti_1484406,
title = {Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width},
author = {Chun, Jaeyi and Li, Wenwen and Agarwal, Anchal and Chowdhury, Srabanti},
abstractNote = {},
doi = {10.1002/aelm.201800689},
journal = {Advanced Electronic Materials},
number = 1,
volume = 5,
place = {United States},
year = {2018},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/aelm.201800689

Citation Metrics:
Cited by: 1 work
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