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Title: Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width

Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [1]
  1. Department of Electrical and Computer Engineering, University of California, Davis CA 95616 USA
  2. Department of Electrical and Computer Engineering, University of California, Santa Barbara CA 93106 USA
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 1; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1484406

Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, and Chowdhury, Srabanti. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width. United States: N. p., Web. doi:10.1002/aelm.201800689.
Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, & Chowdhury, Srabanti. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width. United States. doi:10.1002/aelm.201800689.
Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, and Chowdhury, Srabanti. 2018. "Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width". United States. doi:10.1002/aelm.201800689.
@article{osti_1484406,
title = {Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub-Micrometer Fin Width},
author = {Chun, Jaeyi and Li, Wenwen and Agarwal, Anchal and Chowdhury, Srabanti},
abstractNote = {},
doi = {10.1002/aelm.201800689},
journal = {Advanced Electronic Materials},
number = 1,
volume = 5,
place = {United States},
year = {2018},
month = {12}
}

Works referenced in this record:

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
journal, September 2006
  • Dora, Y.; Chakraborty, A.; Mccarthy, L.
  • IEEE Electron Device Letters, Vol. 27, Issue 9, p. 713-715
  • DOI: 10.1109/LED.2006.881020

High electron mobility transistor based on a GaN?AlxGa 1?xN heterojunction
journal, August 1993
  • Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.
  • Applied Physics Letters, Vol. 63, Issue 9, p. 1214-1215
  • DOI: 10.1063/1.109775

High Breakdown ( >1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
journal, September 2010