Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width

Chun, Jaeyi; Li, Wenwen; Agarwal, Anchal; Chowdhury, Srabanti

doi:10.1002/aelm.201800689

Title: Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width

Abstract

Abstract GaN‐based vertical transistors have demonstrated its excellent properties for high‐power and high‐frequency electronic devices. This work introduces a GaN‐based static induction transistor (SIT) which is another form of vertical GaN transistors without requiring any p ‐type GaN and gate dielectrics for its operation. Processing strategy to generate the GaN SIT with a sub‐micrometer fin width involves photoresist (PR)‐assisted planarization with an understanding of dry etch parameters for the planar PR surface. The efficacy of this process is demonstrated by the device's triode‐like output characteristics with high current density (0.65 kA cm ⁻² ) and low ON resistance (1.48 mΩ cm ² ) at 1 V of drain voltage. In addition, the electrical properties such as current density and modulation are examined depending on the fin width of GaN SIT. The result reveals that the size reduction in the GaN SIT utilizing the sub‐micrometer fin as a channel could increase the current modulation, but it could decrease the current density because of the raised potential minima due to the depletion region overlap. It is believed that the GaN SIT demonstrating high blocking voltage and low ON resistance would present a very promising class of transistor for next‐generation high‐power and high‐frequencymore » electronics.« less

Authors:

^[1]; Li, Wenwen ^[1]; Agarwal, Anchal ^[2]; Chowdhury, Srabanti ^[1]

Department of Electrical and Computer Engineering University of California Davis CA 95616 USA
Department of Electrical and Computer Engineering University of California Santa Barbara CA 93106 USA

Publication Date:: Tue Dec 04 00:00:00 EST 2018

Sponsoring Org.:: USDOE

OSTI Identifier:: 1484406

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Advanced Electronic Materials

Additional Journal Information:: Journal Name: Advanced Electronic Materials Journal Volume: 5 Journal Issue: 1; Journal ID: ISSN 2199-160X

Publisher:: Wiley Blackwell (John Wiley & Sons)

Country of Publication:: United States

Language:: English

Citation Formats


                    Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, and Chowdhury, Srabanti. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width.  United States: N. p., 2018. 
Web.  doi:10.1002/aelm.201800689.

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                    Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, & Chowdhury, Srabanti. Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width.  United States.  https://doi.org/10.1002/aelm.201800689

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                    Chun, Jaeyi, Li, Wenwen, Agarwal, Anchal, and Chowdhury, Srabanti. Tue .  
"Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width".  United States.  https://doi.org/10.1002/aelm.201800689.

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@article{osti_1484406,

  title        = {Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width},

  author       = {Chun, Jaeyi and Li, Wenwen and Agarwal, Anchal and Chowdhury, Srabanti},

  abstractNote = {Abstract GaN‐based vertical transistors have demonstrated its excellent properties for high‐power and high‐frequency electronic devices. This work introduces a GaN‐based static induction transistor (SIT) which is another form of vertical GaN transistors without requiring any p ‐type GaN and gate dielectrics for its operation. Processing strategy to generate the GaN SIT with a sub‐micrometer fin width involves photoresist (PR)‐assisted planarization with an understanding of dry etch parameters for the planar PR surface. The efficacy of this process is demonstrated by the device's triode‐like output characteristics with high current density (0.65 kA cm −2 ) and low ON resistance (1.48 mΩ cm 2 ) at 1 V of drain voltage. In addition, the electrical properties such as current density and modulation are examined depending on the fin width of GaN SIT. The result reveals that the size reduction in the GaN SIT utilizing the sub‐micrometer fin as a channel could increase the current modulation, but it could decrease the current density because of the raised potential minima due to the depletion region overlap. It is believed that the GaN SIT demonstrating high blocking voltage and low ON resistance would present a very promising class of transistor for next‐generation high‐power and high‐frequency electronics.},

  doi          = {10.1002/aelm.201800689},

  journal      = {Advanced Electronic Materials},

  number       = 1,

  volume       = 5,

  place        = {United States},

  year         = {Tue Dec 04 00:00:00 EST 2018},

  month        = {Tue Dec 04 00:00:00 EST 2018}

}

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Title: Schottky Junction Vertical Channel GaN Static Induction Transistor with a Sub‐Micrometer Fin Width

Abstract

Citation Formats

OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET journal, December 2016

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High-frequency high-power static induction transistor
journal, March 1978

Reliability and parasitic issues in GaN-based power HEMTs: a review
journal, August 2016

Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics
journal, April 2006

A first-order theory of the static induction transistor
journal, December 1987

Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range
journal, May 2012

Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET)
journal, May 2018

State of the art on gate insulation and surface passivation for GaN-based power HEMTs
journal, May 2018

High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
journal, September 2006

Will We See Gigahertz Organic Transistors?
journal, January 2018

Design optimization of 600 V SiC SITs for high power and high frequency operation
journal, January 2005

Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure
journal, October 2013

Design and fabrication of a 1.2 kV GaN-based MOS vertical transistor for single chip normally off operation: Design and fabrication of a 1.2-kV GaN-based MOS vertical transistor
journal, June 2016

GaN Power Transistors on Si Substrates for Switching Applications
journal, July 2010

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes
journal, February 2016

High electron mobility transistor based on a GaN‐Al_xGa _1−xN heterojunction
journal, August 1993

Current status and scope of gallium nitride-based vertical transistors for high-power electronics application
journal, June 2013

Electrical characteristics of high performance Au/n-GaN schottky diodes
journal, November 1998

Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
journal, January 1994

DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues
journal, September 2005

Molybdenum work function determined by electron emission microscopy
journal, November 1971

High Breakdown ( >1500 V ) AlGaN/GaN HEMTs by Substrate-Transfer Technology
journal, September 2010

Characteristics of static induction transistors: Effects of series resistance
journal, July 1978

GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
journal, February 2008

Extremely Low ON-Resistance SiC Cascode Configuration Using Buried-Gate Static Induction Transistor
journal, December 2018

Vertical GaN-based trench metal oxide semiconductor field-effect transistors on a free-standing GaN substrate with blocking voltage of 1.6 kV
journal, January 2014

Demonstration of GaN Static Induction Transistor (SIT) Using Self-Aligned Process
journal, November 2017

A novel self-aligned fabrication process for microwave static induction transistors in silicon carbide
journal, December 2000

A study of temperature dependent current–voltage (I–V–T) characteristics in Ni/sol–gel β-Ga2O3/n-GaN structure
journal, May 2018

Straight and Smooth Etching of GaN (1\bar100) Plane by Combination of Reactive Ion Etching and KOH Wet Etching Techniques
journal, May 2006

700-V 1.0-$hboxmOmega cdot hboxcm^2$Buried Gate SiC-SIT (SiC-BGSIT)
journal, November 2006

Electron affinity of AlxGa1−xN(0001) surfaces
journal, April 2001

A review of SiC static induction transistor development for high-frequency power amplifiers
journal, May 2002

Photoelectric Detectors Based on Inorganic p-Type Semiconductor Materials
journal, June 2018

An Investigation on Border Traps in III–V MOSFETs With an In _0.53 Ga _0.47 As Channel
journal, November 2015

Threshold Voltage Shift Due to Charge Trapping in Dielectric-Gated AlGaN/GaN High Electron Mobility Transistors Examined in Au-Free Technology
journal, October 2013

Field-effect transistor versus analog transistor (static induction transistor)
journal, April 1975

Gallium nitride devices for power electronic applications
journal, June 2013

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
journal, January 2012