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Title: Control of Epitaxial BaFe 2As 2 Atomic Configurations with Substrate Surface Terminations

Abstract

Atomic layer controlled growth of epitaxial thin films of unconventional superconductors opens the opportunity to discover novel high temperature superconductors. For instance, the interfacial atomic configurations may play an important role in superconducting behavior of monolayer FeSe on SrTiO 3 and other Fe-based superconducting thin films. Here, we demonstrate a selective control of the atomic configurations in Co-doped BaFe 2As 2 epitaxial thin films and its strong influence on superconducting transition temperatures by manipulating surface termination of (001) SrTiO 3 substrates. In a combination of first-principles calculations and high-resolution scanning transmission electron microscopy imaging, we show that Co-doped BaFe 2As 2 on TiO 2-terminated SrTiO 3 is a tetragonal structure with an atomically sharp interface and with an initial Ba layer. In contrast, Co-doped BaFe 2As 2 on SrO-terminated SrTiO 3 has a monoclinic distortion and a BaFeO 3-x initial layer. Furthermore, the superconducting transition temperature of Co-doped BaFe 2As 2 ultrathin films on TiO 2-terminated SrTiO 3 is significantly higher than that on SrO-terminated SrTiO 3, which we attribute to shaper interfaces with no lattice distortions. As a result, this study allows the design of the interfacial atomic configurations and the effects of the interface on superconductivity in Fe-basedmore » superconductors.« less

Authors:
 [1];  [2]; ORCiD logo [3];  [1];  [1];  [4];  [5];  [5];  [1];  [1];  [6];  [3];  [4];  [1];  [3]; ORCiD logo [1]
  1. Univ. of Wisconsin, Madison, WI (United States)
  2. Univ. of California, Irvine, CA (United States); Nanjing Univ., Jiangsu (People's Republic of China); Southern Univ. of Science and Technology, Guangdong (People's Republic of China)
  3. The Pennsylvania State Univ., University Park, PA (United States)
  4. Florida State Univ., Tallahassee, FL (United States)
  5. Argonne National Lab. (ANL), Argonne, IL (United States)
  6. Univ. of California, Irvine, CA (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1484284
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 10; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; BaFe2As2; Superconducting Tc; heterostructures; interfacial atomic structure; surface termination; thin films

Citation Formats

Kang, Jong -Hoon, Xie, Lin, Wang, Yi, Lee, Hyungwoo, Campbell, Neil, Jiang, Jianyi, Ryan, Philip J., Keavney, David J., Lee, Jung -Woo, Kim, Tae Heon, Pan, Xiaoqing, Chen, Long -Qing, Hellstrom, Eric E., Rzchowski, Mark S., Liu, Zi -Kui, and Eom, Chang -Beom. Control of Epitaxial BaFe2As2 Atomic Configurations with Substrate Surface Terminations. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.8b02704.
Kang, Jong -Hoon, Xie, Lin, Wang, Yi, Lee, Hyungwoo, Campbell, Neil, Jiang, Jianyi, Ryan, Philip J., Keavney, David J., Lee, Jung -Woo, Kim, Tae Heon, Pan, Xiaoqing, Chen, Long -Qing, Hellstrom, Eric E., Rzchowski, Mark S., Liu, Zi -Kui, & Eom, Chang -Beom. Control of Epitaxial BaFe2As2 Atomic Configurations with Substrate Surface Terminations. United States. doi:10.1021/acs.nanolett.8b02704.
Kang, Jong -Hoon, Xie, Lin, Wang, Yi, Lee, Hyungwoo, Campbell, Neil, Jiang, Jianyi, Ryan, Philip J., Keavney, David J., Lee, Jung -Woo, Kim, Tae Heon, Pan, Xiaoqing, Chen, Long -Qing, Hellstrom, Eric E., Rzchowski, Mark S., Liu, Zi -Kui, and Eom, Chang -Beom. Mon . "Control of Epitaxial BaFe2As2 Atomic Configurations with Substrate Surface Terminations". United States. doi:10.1021/acs.nanolett.8b02704. https://www.osti.gov/servlets/purl/1484284.
@article{osti_1484284,
title = {Control of Epitaxial BaFe2As2 Atomic Configurations with Substrate Surface Terminations},
author = {Kang, Jong -Hoon and Xie, Lin and Wang, Yi and Lee, Hyungwoo and Campbell, Neil and Jiang, Jianyi and Ryan, Philip J. and Keavney, David J. and Lee, Jung -Woo and Kim, Tae Heon and Pan, Xiaoqing and Chen, Long -Qing and Hellstrom, Eric E. and Rzchowski, Mark S. and Liu, Zi -Kui and Eom, Chang -Beom},
abstractNote = {Atomic layer controlled growth of epitaxial thin films of unconventional superconductors opens the opportunity to discover novel high temperature superconductors. For instance, the interfacial atomic configurations may play an important role in superconducting behavior of monolayer FeSe on SrTiO3 and other Fe-based superconducting thin films. Here, we demonstrate a selective control of the atomic configurations in Co-doped BaFe2As2 epitaxial thin films and its strong influence on superconducting transition temperatures by manipulating surface termination of (001) SrTiO3 substrates. In a combination of first-principles calculations and high-resolution scanning transmission electron microscopy imaging, we show that Co-doped BaFe2As2 on TiO2-terminated SrTiO3 is a tetragonal structure with an atomically sharp interface and with an initial Ba layer. In contrast, Co-doped BaFe2As2 on SrO-terminated SrTiO3 has a monoclinic distortion and a BaFeO3-x initial layer. Furthermore, the superconducting transition temperature of Co-doped BaFe2As2 ultrathin films on TiO2-terminated SrTiO3 is significantly higher than that on SrO-terminated SrTiO3, which we attribute to shaper interfaces with no lattice distortions. As a result, this study allows the design of the interfacial atomic configurations and the effects of the interface on superconductivity in Fe-based superconductors.},
doi = {10.1021/acs.nanolett.8b02704},
journal = {Nano Letters},
number = 10,
volume = 18,
place = {United States},
year = {2018},
month = {8}
}

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