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Title: Thickness scaling of pyroelectric response in thin ferroelectric Hf 1-xZr xO2 films

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5045635 · OSTI ID:1483977
 [1];  [1];  [1];  [1]; ORCiD logo [2]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Virginia, Charlottesville, VA (United States). Department of Materials Science and Engineering and Charles L. Brown Department of Electrical and Computer Engineering

In this study, the scaling of polarization and pyroelectric response across a thickness series (5–20 nm) of Hf0.58Zr0.42O2 films with TaN electrodes was characterized. Reduction in thickness from 20 nm to 5 nm resulted in a decreased remanent polarization from 17 to 2.8 μC cm-2. Accompanying the decreased remanent polarization was an increased absolute pyroelectric coefficient, from 30 to 58 μC m-2 K-1. The pyroelectric response of the 5 nm film was unstable and decreased logarithmically with time, while that of 10 nm and thicker films was stable over a time scale of >300 h at room temperature. Finally, the sign of the pyroelectric response was irreversible with differing polarity of poling bias for the 5 nm thick film, indicating that the enhanced pyroelectric response was of electret origins, whereas the pyroelectric response in thicker films was consistent with a crystallographic origin.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
Grant/Contract Number:
AC04-94AL85000; NA0003525
OSTI ID:
1483977
Report Number(s):
SAND--2018-12973J; 669783
Journal Information:
Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 113; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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