Silicon Oxide‐Rich Diamond‐Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo‐Oxidative Stability
Abstract
Abstract Silicon oxide‐containing diamond‐like carbon (a‐C:H:Si:O) films are a promising class of protective coatings for environmentally‐demanding applications owing to their lower residual stresses and superior thermal stability and oxidation resistance relative to undoped diamond‐like carbon. However, existing versions of a‐C:H:Si:O deposited by traditional methods such as plasma‐enhanced chemical vapor deposition (PECVD) undergo substantial degradation and oxidation at temperatures above 250 °C. This, together with the difficulty of PECVD in depositing conformal coatings on complex geometries such as high‐aspect‐ratio features, has limited the applicability of a‐C:H:Si:O. Here, the unique capabilities of plasma immersion ion implantation and deposition (PIIID) to grow silicon oxide‐rich diamond‐like carbon materials that are ultrasmooth, continuous, and conformal on high‐aspect‐ratio topographies are explored. The high concentration of silicon and oxygen in PIIID‐grown films (23 ± 5 at.% and 11 ± 4 at.%, respectively) is unrivalled for this class of materials, and drastically increases the resistance to oxidation at high temperatures, compared with PECVD‐grown films. The results open the path for using a‐C:H:Si:O in applications involving exposure of materials to extreme environments.
- Authors:
-
[1];
- Materials Science and Engineering Program and Department of Mechanical Engineering The University of Texas at Austin Austin TX 78712 USA
- Department of Materials Science and Engineering University of Pennsylvania Philadelphia PA 19104 USA
- NCD Technologies LLC Madison WI 53719 USA
- Department of Mechanical Engineering and Applied Mechanics University of Pennsylvania Philadelphia PA 19104 USA
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1483734
- Grant/Contract Number:
- DE‐AC02‐98CH10886
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Materials Interfaces
- Additional Journal Information:
- Journal Name: Advanced Materials Interfaces Journal Volume: 6 Journal Issue: 2; Journal ID: ISSN 2196-7350
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Mangolini, Filippo, McClimon, J. Brandon, Segersten, Justin, Hilbert, James, Heaney, Patrick, Lukes, Jennifer R., and Carpick, Robert W. Silicon Oxide‐Rich Diamond‐Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo‐Oxidative Stability. Germany: N. p., 2018.
Web. doi:10.1002/admi.201801416.
Mangolini, Filippo, McClimon, J. Brandon, Segersten, Justin, Hilbert, James, Heaney, Patrick, Lukes, Jennifer R., & Carpick, Robert W. Silicon Oxide‐Rich Diamond‐Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo‐Oxidative Stability. Germany. https://doi.org/10.1002/admi.201801416
Mangolini, Filippo, McClimon, J. Brandon, Segersten, Justin, Hilbert, James, Heaney, Patrick, Lukes, Jennifer R., and Carpick, Robert W. Wed .
"Silicon Oxide‐Rich Diamond‐Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo‐Oxidative Stability". Germany. https://doi.org/10.1002/admi.201801416.
@article{osti_1483734,
title = {Silicon Oxide‐Rich Diamond‐Like Carbon: A Conformal, Ultrasmooth Thin Film Material with High Thermo‐Oxidative Stability},
author = {Mangolini, Filippo and McClimon, J. Brandon and Segersten, Justin and Hilbert, James and Heaney, Patrick and Lukes, Jennifer R. and Carpick, Robert W.},
abstractNote = {Abstract Silicon oxide‐containing diamond‐like carbon (a‐C:H:Si:O) films are a promising class of protective coatings for environmentally‐demanding applications owing to their lower residual stresses and superior thermal stability and oxidation resistance relative to undoped diamond‐like carbon. However, existing versions of a‐C:H:Si:O deposited by traditional methods such as plasma‐enhanced chemical vapor deposition (PECVD) undergo substantial degradation and oxidation at temperatures above 250 °C. This, together with the difficulty of PECVD in depositing conformal coatings on complex geometries such as high‐aspect‐ratio features, has limited the applicability of a‐C:H:Si:O. Here, the unique capabilities of plasma immersion ion implantation and deposition (PIIID) to grow silicon oxide‐rich diamond‐like carbon materials that are ultrasmooth, continuous, and conformal on high‐aspect‐ratio topographies are explored. The high concentration of silicon and oxygen in PIIID‐grown films (23 ± 5 at.% and 11 ± 4 at.%, respectively) is unrivalled for this class of materials, and drastically increases the resistance to oxidation at high temperatures, compared with PECVD‐grown films. The results open the path for using a‐C:H:Si:O in applications involving exposure of materials to extreme environments.},
doi = {10.1002/admi.201801416},
journal = {Advanced Materials Interfaces},
number = 2,
volume = 6,
place = {Germany},
year = {Wed Nov 28 00:00:00 EST 2018},
month = {Wed Nov 28 00:00:00 EST 2018}
}
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