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Title: Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Abstract

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [3];  [4]; ORCiD logo [5];  [6];  [7];  [1];  [8]; ORCiD logo [9];  [9]; ORCiD logo [1];  [8]
  1. Univ. of Jyvaskyla, Jyvaskyla (Finland)
  2. Institut d'Electronique du Sud, Montpellier (France)
  3. European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  4. The Aerospace Corp., Los Angeles, CA (United States)
  5. Argonne National Lab. (ANL), Lemont, IL (United States)
  6. ESA/ESTEC, Noordwijk, AG (The Netherlands)
  7. Cypress Semiconductor, San Jose, CA (United States)
  8. Univ. of Montpellier, Montpellier (France)
  9. Univ. of Montpellier/CNRS, Montpellier (France)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division; European Space Agency (ESA)
OSTI Identifier:
1483658
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 65; Journal Issue: 8; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; Dynamic test; ferroelectric random access memory (FRAM); heavy ion; single-event effect (SEE); single-event functional interrupt (SEFI); single-event upset; static test; X-ray

Citation Formats

Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., and Dilillo, L. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory. United States: N. p., 2018. Web. doi:10.1109/TNS.2018.2797543.
Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., & Dilillo, L. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory. United States. doi:10.1109/TNS.2018.2797543.
Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., and Dilillo, L. Wed . "Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory". United States. doi:10.1109/TNS.2018.2797543. https://www.osti.gov/servlets/purl/1483658.
@article{osti_1483658,
title = {Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory},
author = {Bosser, Alexandre L. and Gupta, Viyas and Javanainen, A. and Tsiligiannis, Georgios and LaLumondiere, Stephen D. and Brewe, D. and Ferlet-Cavrois, Veronique and Puchner, H. and Kettunen, H. and Gil, T. and Wrobel, Frederic and Saigne, Frederic and Virtanen, A. and Dilillo, L.},
abstractNote = {This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.},
doi = {10.1109/TNS.2018.2797543},
journal = {IEEE Transactions on Nuclear Science},
number = 8,
volume = 65,
place = {United States},
year = {2018},
month = {1}
}

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