Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Journal Article · · IEEE Transactions on Nuclear Science
ORCiD logo [1];  [2]; ORCiD logo [1]; ORCiD logo [3];  [4]; ORCiD logo [5];  [6];  [7];  [1];  [8]; ORCiD logo [9];  [9]; ORCiD logo [1];  [8]
  1. Univ. of Jyvaskyla, Jyvaskyla (Finland)
  2. Institut d'Electronique du Sud, Montpellier (France)
  3. European Organization for Nuclear Research (CERN), Geneva (Switzerland)
  4. The Aerospace Corp., Los Angeles, CA (United States)
  5. Argonne National Lab. (ANL), Lemont, IL (United States)
  6. ESA/ESTEC, Noordwijk, AG (The Netherlands)
  7. Cypress Semiconductor, San Jose, CA (United States)
  8. Univ. of Montpellier, Montpellier (France)
  9. Univ. of Montpellier/CNRS, Montpellier (France)
+ Show Author Affiliations

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; European Space Agency (ESA)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1483658
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 65, Issue 8; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

Cited By (2)

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer journal November 2019
High performance and mechanism of the resistive switching device based on lead halide thin films journal January 2019

Figures / Tables (11)

Table 1(p. 2)table Table 1
Table 2(p. 2)table Table 2
Table 3(p. 2)table Table 3
Figure 1(p. 3)figure Figure 1
Figure 2(p. 4)figure Figure 2
Figure 3(p. 4)figure Figure 3
Figure 4(p. 4)figure Figure 4
Figure 5(p. 5)figure Figure 5
Figure 6(p. 5)figure Figure 6
Figure 7(p. 6)figure Figure 7
Table 2(p. 6)table Table 2

Similar Records

Related Subjects

42 ENGINEERING
Dynamic test
ferroelectric random access memory (FRAM)
heavy ion
single-event effect (SEE)
single-event functional interrupt (SEFI)
single-event upset
static test
X-ray