Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Bosser, Alexandre L.; Gupta, Viyas; Javanainen, A.; Tsiligiannis, Georgios; LaLumondiere, Stephen D.; Brewe, D.; Ferlet-Cavrois, Veronique; Puchner, H.; Kettunen, H.; Gil, T.; Wrobel, Frederic; Saigne, Frederic; Virtanen, A.; Dilillo, L.

doi:10.1109/TNS.2018.2797543

Title: Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Abstract

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.

Authors:

^[1]; Gupta, Viyas ^[2];

^[1];

^[3]; LaLumondiere, Stephen D. ^[4];

^[5]; Ferlet-Cavrois, Veronique ^[6]; Puchner, H. ^[7]; Kettunen, H. ^[1]; Gil, T. ^[8];

^[9]; Saigne, Frederic ^[9];

^[1]; Dilillo, L. ^[8]

Univ. of Jyvaskyla, Jyvaskyla (Finland)
Institut d'Electronique du Sud, Montpellier (France)
European Organization for Nuclear Research (CERN), Geneva (Switzerland)
The Aerospace Corp., Los Angeles, CA (United States)
Argonne National Lab. (ANL), Lemont, IL (United States)
ESA/ESTEC, Noordwijk, AG (The Netherlands)
Cypress Semiconductor, San Jose, CA (United States)
Univ. of Montpellier, Montpellier (France)
Univ. of Montpellier/CNRS, Montpellier (France)

Publication Date:: 2018-01-24

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; European Space Agency (ESA)

OSTI Identifier:: 1483658

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 65; Journal Issue: 8; Journal ID: ISSN 0018-9499

Publisher:: IEEE

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING; Dynamic test; ferroelectric random access memory (FRAM); heavy ion; single-event effect (SEE); single-event functional interrupt (SEFI); single-event upset; static test; X-ray

Citation Formats


                    Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., and Dilillo, L.. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory.  United States: N. p., 2018. 
Web.  doi:10.1109/TNS.2018.2797543.

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                    Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., & Dilillo, L.. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory.  United States.  https://doi.org/10.1109/TNS.2018.2797543

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                    Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., and Dilillo, L.. Wed .  
"Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory".  United States.  https://doi.org/10.1109/TNS.2018.2797543.  https://www.osti.gov/servlets/purl/1483658.

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@article{osti_1483658,

  title        = {Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory},

  author       = {Bosser, Alexandre L. and Gupta, Viyas and Javanainen, A. and Tsiligiannis, Georgios and LaLumondiere, Stephen D. and Brewe, D. and Ferlet-Cavrois, Veronique and Puchner, H. and Kettunen, H. and Gil, T. and Wrobel, Frederic and Saigne, Frederic and Virtanen, A. and Dilillo, L.},

  abstractNote = {This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.},

  doi          = {10.1109/TNS.2018.2797543},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 8,

  volume       = 65,

  place        = {United States},

  year         = {2018},

  month        = {1}

}

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Journal Article:

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https://doi.org/10.1109/TNS.2018.2797543

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Cited by: 8 works

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Figures / Tables:

Table 1: Summary of the irradiations performed on the DUTs.

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Works referencing / citing this record:

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DOI: 10.1088/1361-6463/aafe5e

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Title: Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Abstract

Citation Formats

Figures / Tables:

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer journal, November 2019

High performance and mechanism of the resistive switching device based on lead halide thin films journal, January 2019

Multi‐Functional Controllable Memory Devices Applied for 3D Integration Based on a Single Niobium Oxide Layer
journal, November 2019

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journal, January 2019