Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
Abstract
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.
- Authors:
-
- Univ. of Jyvaskyla, Jyvaskyla (Finland)
- Institut d'Electronique du Sud, Montpellier (France)
- European Organization for Nuclear Research (CERN), Geneva (Switzerland)
- The Aerospace Corp., Los Angeles, CA (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- ESA/ESTEC, Noordwijk, AG (The Netherlands)
- Cypress Semiconductor, San Jose, CA (United States)
- Univ. of Montpellier, Montpellier (France)
- Univ. of Montpellier/CNRS, Montpellier (France)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; European Space Agency (ESA)
- OSTI Identifier:
- 1483658
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- IEEE Transactions on Nuclear Science
- Additional Journal Information:
- Journal Volume: 65; Journal Issue: 8; Journal ID: ISSN 0018-9499
- Publisher:
- IEEE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING; Dynamic test; ferroelectric random access memory (FRAM); heavy ion; single-event effect (SEE); single-event functional interrupt (SEFI); single-event upset; static test; X-ray
Citation Formats
Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., and Dilillo, L.. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory. United States: N. p., 2018.
Web. doi:10.1109/TNS.2018.2797543.
Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., & Dilillo, L.. Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory. United States. https://doi.org/10.1109/TNS.2018.2797543
Bosser, Alexandre L., Gupta, Viyas, Javanainen, A., Tsiligiannis, Georgios, LaLumondiere, Stephen D., Brewe, D., Ferlet-Cavrois, Veronique, Puchner, H., Kettunen, H., Gil, T., Wrobel, Frederic, Saigne, Frederic, Virtanen, A., and Dilillo, L.. Wed .
"Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory". United States. https://doi.org/10.1109/TNS.2018.2797543. https://www.osti.gov/servlets/purl/1483658.
@article{osti_1483658,
title = {Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory},
author = {Bosser, Alexandre L. and Gupta, Viyas and Javanainen, A. and Tsiligiannis, Georgios and LaLumondiere, Stephen D. and Brewe, D. and Ferlet-Cavrois, Veronique and Puchner, H. and Kettunen, H. and Gil, T. and Wrobel, Frederic and Saigne, Frederic and Virtanen, A. and Dilillo, L.},
abstractNote = {This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.},
doi = {10.1109/TNS.2018.2797543},
journal = {IEEE Transactions on Nuclear Science},
number = 8,
volume = 65,
place = {United States},
year = {2018},
month = {1}
}
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