Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory
Journal Article
·
· IEEE Transactions on Nuclear Science
- Univ. of Jyvaskyla, Jyvaskyla (Finland)
- Institut d'Electronique du Sud, Montpellier (France)
- European Organization for Nuclear Research (CERN), Geneva (Switzerland)
- The Aerospace Corp., Los Angeles, CA (United States)
- Argonne National Lab. (ANL), Lemont, IL (United States)
- ESA/ESTEC, Noordwijk, AG (The Netherlands)
- Cypress Semiconductor, San Jose, CA (United States)
- Univ. of Montpellier, Montpellier (France)
- Univ. of Montpellier/CNRS, Montpellier (France)
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; European Space Agency (ESA)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1483658
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 65, Issue 8; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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