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Title: Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

Journal Article · · IEEE Transactions on Nuclear Science

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; European Space Agency (ESA)
Grant/Contract Number:
AC02-06CH11357
OSTI ID:
1483658
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 65, Issue 8; ISSN 0018-9499
Publisher:
IEEECopyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (11)