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Title: Gallium nitride (GaN) devices as a platform technology for radiation hard inertial confinement fusion diagnostics

Abstract

Inertial Confinement Fusion (ICF) is undergoing more detailed research to increase neutron yield and will require high resolution imaging near the target. Neutron damage to diagnostics remains a serious issue in understanding and achieving ICF. We have demonstrated that Gallium Nitride (GaN) optoelectronic devices have exceptional neutron radiation hardness, by systematic testing of neutron radiation effects in GaN devices and materials with elevated neutron fluence levels and a broad neutron energy spectrum. During the 2013-2017 run cycles at Los Alamos Neutron Science Center (LANSCE), we irradiated various GaN materials and devices with fast and thermal plus resonance neutrons at several beamlines. This work presents a radiation hardness study for Aluminum Gallium Nitride and Gallium Nitride (AlGaN/GaN) deep UV LEDs irradiated at the LANSCE 4FP60R beamline. The fluence level was up to 2.4 × 1013 neutrons/cm2 for neutrons with energies greater than 0.1 MeV. The device performance was monitored in real time. After three years of irradiation studies, we found that the GaN devices maintained operation in the forward active region. The current and voltage relation (I-V curves) varied insignificantly in the linear region. Finally, our results demonstrate the radiation hardness needed for laser fusion diagnostics at least up to 1017more » neutron yield per shot, if the diagnostics is placed 1 m away from the target, where the neutron fluence per shot is approximately 8 × 1011 n/cm2. The GaN devices can operate for multiple shots.« less

Authors:
ORCiD logo [1];  [2];  [2]; ORCiD logo [3]
+ Show Author Affiliations
  1. Univ. of Nevada, Las Vegas, NV (United States). Dept. of Electrical and Computer Engineering; Nevada National Security Site, Las Vegas, NV (United States)
  2. Univ. of Nevada, Las Vegas, NV (United States). Dept. of Electrical and Computer Engineering
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1483539
Alternate Identifier(s):
OSTI ID: 1477912
Report Number(s):
LA-UR-18-26279
Journal ID: ISSN 0034-6748
Grant/Contract Number:  
89233218CNA000001
Resource Type:
Accepted Manuscript
Journal Name:
Review of Scientific Instruments
Additional Journal Information:
Journal Volume: 89; Journal Issue: 10; Journal ID: ISSN 0034-6748
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; fast neutron irradiation, GaN, AlGaN, radiation hardness, optoelectronics

Citation Formats

Sun, K. -X., Valles, M., Valencia, H., and Nelson, R. O. Gallium nitride (GaN) devices as a platform technology for radiation hard inertial confinement fusion diagnostics. United States: N. p., 2018. Web. doi:10.1063/1.5039407.
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Sun, K. -X., Valles, M., Valencia, H., & Nelson, R. O. Gallium nitride (GaN) devices as a platform technology for radiation hard inertial confinement fusion diagnostics. United States. https://doi.org/10.1063/1.5039407
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Sun, K. -X., Valles, M., Valencia, H., and Nelson, R. O. Wed . "Gallium nitride (GaN) devices as a platform technology for radiation hard inertial confinement fusion diagnostics". United States. https://doi.org/10.1063/1.5039407. https://www.osti.gov/servlets/purl/1483539.
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@article{osti_1483539,
title = {Gallium nitride (GaN) devices as a platform technology for radiation hard inertial confinement fusion diagnostics},
author = {Sun, K. -X. and Valles, M. and Valencia, H. and Nelson, R. O.},
abstractNote = {Inertial Confinement Fusion (ICF) is undergoing more detailed research to increase neutron yield and will require high resolution imaging near the target. Neutron damage to diagnostics remains a serious issue in understanding and achieving ICF. We have demonstrated that Gallium Nitride (GaN) optoelectronic devices have exceptional neutron radiation hardness, by systematic testing of neutron radiation effects in GaN devices and materials with elevated neutron fluence levels and a broad neutron energy spectrum. During the 2013-2017 run cycles at Los Alamos Neutron Science Center (LANSCE), we irradiated various GaN materials and devices with fast and thermal plus resonance neutrons at several beamlines. This work presents a radiation hardness study for Aluminum Gallium Nitride and Gallium Nitride (AlGaN/GaN) deep UV LEDs irradiated at the LANSCE 4FP60R beamline. The fluence level was up to 2.4 × 1013 neutrons/cm2 for neutrons with energies greater than 0.1 MeV. The device performance was monitored in real time. After three years of irradiation studies, we found that the GaN devices maintained operation in the forward active region. The current and voltage relation (I-V curves) varied insignificantly in the linear region. Finally, our results demonstrate the radiation hardness needed for laser fusion diagnostics at least up to 1017 neutron yield per shot, if the diagnostics is placed 1 m away from the target, where the neutron fluence per shot is approximately 8 × 1011 n/cm2. The GaN devices can operate for multiple shots.},
doi = {10.1063/1.5039407},
journal = {Review of Scientific Instruments},
number = 10,
volume = 89,
place = {United States},
year = {Wed Oct 17 00:00:00 EDT 2018},
month = {Wed Oct 17 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.5039407
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Cited by: 4 works
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Figures / Tables:

FIG. 1 FIG. 1: The high fluence neutron irradiation experiment at the 4FP60R pre-collimator section.
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Works referenced in this record:

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The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors
journal, July 1949

Deep-Ultraviolet Light-Emitting Diodes
journal, January 2010

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    Figures / Tables found in this record:

    FIG. 1 (p. 3)figure
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    FIG. 3 (p. 3)figure
    FIG. 4 (p. 3)figure
    Table I (p. 3)table
    TABLE II (p. 4)table
    FIG. 5 (p. 5)figure
    TABLE III (p. 5)table
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