Crystal and Electronic Structure and Optical Properties of AE2SiP4 (AE = Sr, Eu, Ba) and Ba4S3P8
Abstract
Three new compounds in the AE ‐Si‐P ( AE = Sr, Eu, Ba) systems are reported. Sr 2 SiP 4 and Eu 2 SiP 4 , the first members of their respective ternary systems, are isostructural to previously reported Ba 2 SiP 4 and crystallize in the noncentrosymmetric I 4 2 d (no. 122) space group. Ba 4 Si 3 P 8 crystallizes in the new structure type, in P 2 1 / c (no. 14) space group, mP ‐120 Pearson symbol, Wyckoff sequence e 30 . In the crystal structures of Sr 2 SiP 4 and Eu 2 SiP 4 all SiP 4 tetrahedral building blocks are connected via formation of P–P bonds forming a three‐dimensional framework. In the crystal structure of Ba 4 Si 3 P 8 , Si‐P tetrahedral chains formed by corner‐sharing, edge‐sharing, and P–P bonds are surrounded by Ba cations. This results in a quasi‐one‐dimensional structure. Electronic structure calculations and UV/Vis measurements suggest that the AE 2 SiP 4 ( AE = Sr, Eu, Ba) are direct bandgap semiconductors with bandgaps of ca. 1.4 eV and have potential for thermoelectric applications.
- Authors:
-
- Ames Lab. and Iowa State Univ., Ames, IA (United States)
- Univ. of California, Davis, CA (United States)
- Publication Date:
- Research Org.:
- Ames Laboratory (AMES), Ames, IA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1483410
- Alternate Identifier(s):
- OSTI ID: 1482747
- Report Number(s):
- IS-J-9791
Journal ID: ISSN 0044-2313
- Grant/Contract Number:
- AC02-07CH11358; 1531193
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Zeitschrift fuer Anorganische und Allgemeine Chemie
- Additional Journal Information:
- Journal Volume: 645; Journal Issue: 3; Journal ID: ISSN 0044-2313
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Ternary system; Semiconductors; Barium; Silicon
Citation Formats
Mark, Justin, Dolyniuk, Juli -Anna, Tran, Nhon, and Kovnir, Kirill. Crystal and Electronic Structure and Optical Properties of AE2SiP4 (AE = Sr, Eu, Ba) and Ba4S3P8. United States: N. p., 2018.
Web. doi:10.1002/zaac.201800430.
Mark, Justin, Dolyniuk, Juli -Anna, Tran, Nhon, & Kovnir, Kirill. Crystal and Electronic Structure and Optical Properties of AE2SiP4 (AE = Sr, Eu, Ba) and Ba4S3P8. United States. https://doi.org/10.1002/zaac.201800430
Mark, Justin, Dolyniuk, Juli -Anna, Tran, Nhon, and Kovnir, Kirill. Mon .
"Crystal and Electronic Structure and Optical Properties of AE2SiP4 (AE = Sr, Eu, Ba) and Ba4S3P8". United States. https://doi.org/10.1002/zaac.201800430. https://www.osti.gov/servlets/purl/1483410.
@article{osti_1483410,
title = {Crystal and Electronic Structure and Optical Properties of AE2SiP4 (AE = Sr, Eu, Ba) and Ba4S3P8},
author = {Mark, Justin and Dolyniuk, Juli -Anna and Tran, Nhon and Kovnir, Kirill},
abstractNote = {Three new compounds in the AE ‐Si‐P ( AE = Sr, Eu, Ba) systems are reported. Sr 2 SiP 4 and Eu 2 SiP 4 , the first members of their respective ternary systems, are isostructural to previously reported Ba 2 SiP 4 and crystallize in the noncentrosymmetric I 4 2 d (no. 122) space group. Ba 4 Si 3 P 8 crystallizes in the new structure type, in P 2 1 / c (no. 14) space group, mP ‐120 Pearson symbol, Wyckoff sequence e 30 . In the crystal structures of Sr 2 SiP 4 and Eu 2 SiP 4 all SiP 4 tetrahedral building blocks are connected via formation of P–P bonds forming a three‐dimensional framework. In the crystal structure of Ba 4 Si 3 P 8 , Si‐P tetrahedral chains formed by corner‐sharing, edge‐sharing, and P–P bonds are surrounded by Ba cations. This results in a quasi‐one‐dimensional structure. Electronic structure calculations and UV/Vis measurements suggest that the AE 2 SiP 4 ( AE = Sr, Eu, Ba) are direct bandgap semiconductors with bandgaps of ca. 1.4 eV and have potential for thermoelectric applications.},
doi = {10.1002/zaac.201800430},
journal = {Zeitschrift fuer Anorganische und Allgemeine Chemie},
number = 3,
volume = 645,
place = {United States},
year = {Mon Nov 19 00:00:00 EST 2018},
month = {Mon Nov 19 00:00:00 EST 2018}
}
Web of Science
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