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Title: Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study

The large non-saturating magnetoresistance (MR) of bulk WTe 2 is greatly reduced in thin films, and vdW heterojunction engineering can significantly enhance the MR effect.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [3] ;  [1] ;  [4]
  1. Beijing Computational Science Research Center, Beijing 100193, China, Department of Materials Science and Engineering, University of Utah
  2. Beijing Computational Science Research Center, Beijing 100193, China
  3. Hefei National Laboratory for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China
  4. Department of Materials Science and Engineering, University of Utah, Salt Lake City, USA, Collaborative Innovation Center of Quantum Matter
Publication Date:
Grant/Contract Number:
FG02-04ER46148
Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 47; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1483106

Hu, Lin, Kang, Lei, Yang, Jinlong, Huang, Bing, and Liu, Feng. Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study. United Kingdom: N. p., Web. doi:10.1039/C8NR04391D.
Hu, Lin, Kang, Lei, Yang, Jinlong, Huang, Bing, & Liu, Feng. Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study. United Kingdom. doi:10.1039/C8NR04391D.
Hu, Lin, Kang, Lei, Yang, Jinlong, Huang, Bing, and Liu, Feng. 2018. "Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study". United Kingdom. doi:10.1039/C8NR04391D.
@article{osti_1483106,
title = {Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study},
author = {Hu, Lin and Kang, Lei and Yang, Jinlong and Huang, Bing and Liu, Feng},
abstractNote = {The large non-saturating magnetoresistance (MR) of bulk WTe 2 is greatly reduced in thin films, and vdW heterojunction engineering can significantly enhance the MR effect.},
doi = {10.1039/C8NR04391D},
journal = {Nanoscale},
number = 47,
volume = 10,
place = {United Kingdom},
year = {2018},
month = {12}
}

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