Bandgap Engineering of Indium Phosphide-Based Core/Shell Heterostructures Through Shell Composition and Thickness
Journal Article
·
· Frontiers in Chemistry
Not Available
- Research Organization:
- Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- National Center for Advancing Translational Sciences (NCATS); National Institutes of Health (NIH); National Science Foundation (NSF); USDOE; USDOE Laboratory Directed Research and Development (LDRD) Program
- Grant/Contract Number:
- 89233218CNA000001
- OSTI ID:
- 1482841
- Report Number(s):
- LA-UR-18-20931; LA-UR-18-28366; 567
- Journal Information:
- Frontiers in Chemistry, Journal Name: Frontiers in Chemistry Vol. 6; ISSN 2296-2646
- Publisher:
- Frontiers Media SACopyright Statement
- Country of Publication:
- Switzerland
- Language:
- English
Similar Records
Bandgap Engineering of InP QDs Through Shell Thickness and Composition
Engineering of Lead Selenide Quantum Dot Based Devices and Core/Shell Heterostructures
Bandgap Engineering of Ga2O3 by MOCVD Through Alloying with Indium
Conference
·
2012
·
OSTI ID:1044830
+3 more
Engineering of Lead Selenide Quantum Dot Based Devices and Core/Shell Heterostructures
Thesis/Dissertation
·
2020
·
OSTI ID:1614831
Bandgap Engineering of Ga2O3 by MOCVD Through Alloying with Indium
Journal Article
·
2026
· Nanomaterials
·
OSTI ID:3016123
+3 more