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Title: Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors

Authors:
ORCiD logo [1] ;  [2] ; ORCiD logo [1] ;  [2] ;  [1]
  1. Department of Materials Science & Engineering, University of Wisconsin-Madison, 1509 University Ave. Madison WI 53706 USA
  2. Department of Mechanical Engineering, University of Wisconsin-Madison, 1513 University Ave. Madison WI 53706 USA
Publication Date:
Grant/Contract Number:
SC0016007; DMR-1720415
Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1482746

Jinkins, Katherine R., Chan, Jason, Jacobberger, Robert M., Berson, Arganthaël, and Arnold, Michael S.. Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors. United States: N. p., Web. doi:10.1002/aelm.201800593.
Jinkins, Katherine R., Chan, Jason, Jacobberger, Robert M., Berson, Arganthaël, & Arnold, Michael S.. Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors. United States. doi:10.1002/aelm.201800593.
Jinkins, Katherine R., Chan, Jason, Jacobberger, Robert M., Berson, Arganthaël, and Arnold, Michael S.. 2018. "Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors". United States. doi:10.1002/aelm.201800593.
@article{osti_1482746,
title = {Substrate-Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors},
author = {Jinkins, Katherine R. and Chan, Jason and Jacobberger, Robert M. and Berson, Arganthaël and Arnold, Michael S.},
abstractNote = {},
doi = {10.1002/aelm.201800593},
journal = {Advanced Electronic Materials},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {11}
}

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