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Title: Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Abstract

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 x 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. As a result, X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

Authors:
 [1];  [2];  [3];  [2];  [3];  [1];  [4];  [1]
  1. Northwestern Univ., Evanston, IL (United States)
  2. Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Univ. of Wisconsin, Madison, WI (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Department of the Navy, Office of Naval Research (ONR); Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)
OSTI Identifier:
1482106
Alternate Identifier(s):
OSTI ID: 1433027
Grant/Contract Number:  
[AC02-06CH11357]
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
[ Journal Volume: 2; Journal Issue: 4]; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., and Bedzyk, Michael J. Epitaxial graphene-encapsulated surface reconstruction of Ge(110). United States: N. p., 2018. Web. doi:10.1103/PhysRevMaterials.2.044004.
Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., & Bedzyk, Michael J. Epitaxial graphene-encapsulated surface reconstruction of Ge(110). United States. doi:10.1103/PhysRevMaterials.2.044004.
Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., and Bedzyk, Michael J. Fri . "Epitaxial graphene-encapsulated surface reconstruction of Ge(110)". United States. doi:10.1103/PhysRevMaterials.2.044004. https://www.osti.gov/servlets/purl/1482106.
@article{osti_1482106,
title = {Epitaxial graphene-encapsulated surface reconstruction of Ge(110)},
author = {Campbell, Gavin P. and Kiraly, Brian and Jacobberger, Robert M. and Mannix, Andrew J. and Arnold, Michael S. and Hersam, Mark C. and Guisinger, Nathan P. and Bedzyk, Michael J.},
abstractNote = {Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 x 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. As a result, X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.},
doi = {10.1103/PhysRevMaterials.2.044004},
journal = {Physical Review Materials},
number = [4],
volume = [2],
place = {United States},
year = {2018},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 5 works
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Figures / Tables:

TABLE I TABLE I: Results of model dependent fit to XRR data listing vertical height (Ζ), layer occupancy fraction (Θ), and distribution width (σ) fitting parameters for as-grown and “6x2” Ge(110). Z is vertical displacement relative to the top-most Ge(110) bulk-like atomic plane, Θ is in units of bulk-like 2D atomic densitiesmore » (8.8 nm-2 for Ge(110) planes and 38.2 nm-2 for EG). Uncertainty of 3 standard deviations are given in parentheses.« less

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    Works referencing / citing this record:

    Reactive intercalation and oxidation at the buried graphene-germanium interface
    journal, July 2019

    • Braeuninger-Weimer, Philipp; Burton, Oliver; Weatherup, Robert S.
    • APL Materials, Vol. 7, Issue 7
    • DOI: 10.1063/1.5098351

      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.