Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Campbell, Gavin P.; Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.; Arnold, Michael S.; Hersam, Mark C.; Guisinger, Nathan P.; Bedzyk, Michael J.

doi:10.1103/PhysRevMaterials.2.044004

Title: Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Abstract

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 x 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. As a result, X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.

Authors:

Campbell, Gavin P. ^[1]; Kiraly, Brian ^[2]; Jacobberger, Robert M. ^[3]; Mannix, Andrew J. ^[2]; Arnold, Michael S. ^[3]; Hersam, Mark C. ^[1]; Guisinger, Nathan P. ^[4]; Bedzyk, Michael J. ^[1]

Northwestern Univ., Evanston, IL (United States)
Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Univ. of Wisconsin, Madison, WI (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)

Publication Date:: 2018-04-13

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Department of the Navy, Office of Naval Research (ONR); Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)

OSTI Identifier:: 1482106

Alternate Identifier(s):: OSTI ID: 1433027

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 2; Journal Issue: 4; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., and Bedzyk, Michael J. Epitaxial graphene-encapsulated surface reconstruction of Ge(110).  United States: N. p., 2018. 
Web.  doi:10.1103/PhysRevMaterials.2.044004.

Copy to clipboard


                    Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., & Bedzyk, Michael J. Epitaxial graphene-encapsulated surface reconstruction of Ge(110).  United States.  https://doi.org/10.1103/PhysRevMaterials.2.044004

Copy to clipboard


                    Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., and Bedzyk, Michael J. Fri .  
"Epitaxial graphene-encapsulated surface reconstruction of Ge(110)".  United States.  https://doi.org/10.1103/PhysRevMaterials.2.044004.  https://www.osti.gov/servlets/purl/1482106.

Copy to clipboard


                    
@article{osti_1482106,

  title        = {Epitaxial graphene-encapsulated surface reconstruction of Ge(110)},

  author       = {Campbell, Gavin P. and Kiraly, Brian and Jacobberger, Robert M. and Mannix, Andrew J. and Arnold, Michael S. and Hersam, Mark C. and Guisinger, Nathan P. and Bedzyk, Michael J.},

  abstractNote = {Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 x 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. As a result, X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.},

  doi          = {10.1103/PhysRevMaterials.2.044004},

  journal      = {Physical Review Materials},

  number       = 4,

  volume       = 2,

  place        = {United States},

  year         = {2018},

  month        = {4}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.1103/PhysRevMaterials.2.044004

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 5 works

Citation information provided by
Web of Science

Figures / Tables:

TABLE I: Results of model dependent fit to XRR data listing vertical height (Ζ), layer occupancy fraction (Θ), and distribution width (σ) fitting parameters for as-grown and “6x2” Ge(110). Z is vertical displacement relative to the top-most Ge(110) bulk-like atomic plane, Θ is in units of bulk-like 2D atomic densitiesmore »

All figures and tables (5 total)

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Atomic arrangements of 16×2 and (17,15,1) 2×1 structures on a Si(110) surface
journal, September 1994

Yamamoto, Youiti
Physical Review B, Vol. 50, Issue 12
DOI: 10.1103/PhysRevB.50.8534

Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation
journal, September 2011

Emtsev, Konstantin V.; Zakharov, Alexei A.; Coletti, Camilla
Physical Review B, Vol. 84, Issue 12
DOI: 10.1103/PhysRevB.84.125423

In situ STM observations of ordering behaviors on Ge(110) surfaces and atomic geometry of the Ge{17151} facet
journal, July 2004

Ichikawa, Toshihiro
Surface Science, Vol. 560, Issue 1-3
DOI: 10.1016/j.susc.2004.04.050

X-ray Reflectivity as a Probe of Mineral-Fluid Interfaces: A User Guide
journal, January 2002

Fenter, P. A.
Reviews in Mineralogy and Geochemistry, Vol. 49, Issue 1
DOI: 10.2138/gsrmg.49.1.149

Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)
journal, November 2013

Emery, Jonathan D.; Detlefs, Blanka; Karmel, Hunter J.
Physical Review Letters, Vol. 111, Issue 21
DOI: 10.1103/PhysRevLett.111.215501

RHEED Study of Surface Reconstruction at Clean Ge(110) Surface
journal, October 1985

Noro, Hisato; Ichikawa, Toshihiro
Japanese Journal of Applied Physics, Vol. 24, Issue Part 1, No. 10
DOI: 10.1143/JJAP.24.1288

Two-dimensional gallium nitride realized via graphene encapsulation
journal, August 2016

Al Balushi, Zakaria Y.; Wang, Ke; Ghosh, Ram Krishna
Nature Materials, Vol. 15, Issue 11
DOI: 10.1038/nmat4742

Reconstructions and phase transition of clean Ge(110)
journal, March 2014

Mullet, C. H.; Chiang, S.
Surface Science, Vol. 621
DOI: 10.1016/j.susc.2013.10.023

Electronic structure of the $Si (110) − (16 \times 2)$ surface: High-resolution ARPES and STM investigation
journal, January 2009

Sakamoto, Kazuyuki; Setvin, Martin; Mawatari, Kenji
Physical Review B, Vol. 79, Issue 4
DOI: 10.1103/PhysRevB.79.045304

Lateral adsorption geometry and site-specific electronic structure of a large organic chemisorbate on a metal surface
journal, July 2006

Kraft, A.; Temirov, R.; Henze, S. K. M.
Physical Review B, Vol. 74, Issue 4
DOI: 10.1103/PhysRevB.74.041402

High-resolution photoemission spectroscopy study of the single-domain $Si (110) − 16 \times 2$ surface
journal, March 2007

Kim, N. D.; Kim, Y. K.; Park, C. -Y.
Physical Review B, Vol. 75, Issue 12
DOI: 10.1103/PhysRevB.75.125309

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
journal, December 2009

Riedl, C.; Coletti, C.; Iwasaki, T.
Physical Review Letters, Vol. 103, Issue 24
DOI: 10.1103/PhysRevLett.103.246804

Structural elements on reconstructed Si and $Ge (110)$ surfaces
journal, July 2004

Stekolnikov, A. A.; Furthmüller, J.; Bechstedt, F.
Physical Review B, Vol. 70, Issue 4
DOI: 10.1103/PhysRevB.70.045305

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
journal, April 2014

Lee, J.-H.; Lee, E. K.; Joo, W.-J.
Science, Vol. 344, Issue 6181, p. 286-289
DOI: 10.1126/science.1252268

Surface structure determination by X-ray diffraction
journal, May 1989

Feidenhans'l, R.
Surface Science Reports, Vol. 10, Issue 3
DOI: 10.1016/0167-5729(89)90002-2

7 × 7 Reconstruction on Si(111) Resolved in Real Space
journal, January 1983

Binnig, G.; Rohrer, H.; Gerber, Ch.
Physical Review Letters, Vol. 50, Issue 2
DOI: 10.1103/PhysRevLett.50.120

Growth and electronic structure of graphene on semiconducting Ge(110)
journal, October 2017

Tesch, Julia; Voloshina, Elena; Fonin, Mikhail
Carbon, Vol. 122
DOI: 10.1016/j.carbon.2017.06.079

Direct Growth of Graphene Film on Germanium Substrate
journal, August 2013

Wang, Gang; Zhang, Miao; Zhu, Yun
Scientific Reports, Vol. 3, Issue 1
DOI: 10.1038/srep02465

Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray Diffraction
journal, March 1985

Bohr, J.; Feidenhans'l, R.; Nielsen, M.
Physical Review Letters, Vol. 54, Issue 12
DOI: 10.1103/PhysRevLett.54.1275

Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds
journal, January 1996

Duke, Charles B.
Chemical Reviews, Vol. 96, Issue 4
DOI: 10.1021/cr950212s

Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D
journal, January 2002

Hersam, M. C.; Guisinger, N. P.; Lee, J.
Applied Physics Letters, Vol. 80, Issue 2
DOI: 10.1063/1.1431689

Organometallic Chemistry on Silicon and Germanium Surfaces
journal, May 2002

Buriak, Jillian M.
Chemical Reviews, Vol. 102, Issue 5
DOI: 10.1021/cr000064s

Structural analysis of the indium-stabilized $GaAs (001) - c (8 \times 2)$ surface
journal, December 2002

Lee, T. -L.; Kumpf, C.; Kazimirov, A.
Physical Review B, Vol. 66, Issue 23
DOI: 10.1103/PhysRevB.66.235301

On the use of CCD area detectors for high-resolution specular X-ray reflectivity
journal, June 2006

Fenter, P.; Catalano, J. G.; Park, C.
Journal of Synchrotron Radiation, Vol. 13, Issue 4
DOI: 10.1107/S0909049506018000

Electronic and energetic properties of Ge(110) pentagons
journal, August 2014

Bampoulis, Pantelis; Acun, Adil; Zhang, Lijie
Surface Science, Vol. 626
DOI: 10.1016/j.susc.2014.03.019

Passivation of Germanium by Graphene
journal, May 2017

Rojas Delgado, Richard; Jacobberger, Robert M.; Roy, Susmit Singha
ACS Applied Materials & Interfaces, Vol. 9, Issue 20
DOI: 10.1021/acsami.7b03889

Surface X-ray diffraction
journal, May 1992

Robinson, I. K.; Tweet, D. J.
Reports on Progress in Physics, Vol. 55, Issue 5
DOI: 10.1088/0034-4885/55/5/002

The rise of graphene
journal, March 2007

Geim, A. K.; Novoselov, K. S.
Nature Materials, Vol. 6, Issue 3, p. 183-191
DOI: 10.1038/nmat1849

X-Ray Evanescent-Wave Absorption and Emission
journal, January 1983

Becker, R. S.; Golovchenko, J. A.; Patel, J. R.
Physical Review Letters, Vol. 50, Issue 3
DOI: 10.1103/PhysRevLett.50.153

Graphene on Ru(0001): a corrugated and chiral structure
journal, April 2010

Martoccia, D.; Björck, M.; Schlepütz, C. M.
New Journal of Physics, Vol. 12, Issue 4
DOI: 10.1088/1367-2630/12/4/043028

Ideal hydrogen termination of the Si (111) surface
journal, February 1990

Higashi, G. S.; Chabal, Y. J.; Trucks, G. W.
Applied Physics Letters, Vol. 56, Issue 7
DOI: 10.1063/1.102728

Elemental structure in Si(110)-“16×2” revealed by scanning tunneling microscopy
journal, January 2000

An, Toshu; Yoshimura, Masamichi; Ono, Izumi
Physical Review B, Vol. 61, Issue 4
DOI: 10.1103/PhysRevB.61.3006

An ab initio study on the atomic geometry of reconstructed Ge()16×2 surface
journal, October 2003

Ichikawa, Toshihiro
Surface Science, Vol. 544, Issue 1
DOI: 10.1016/j.susc.2003.08.011

How Graphene Islands Are Unidirectionally Aligned on the Ge(110) Surface
journal, April 2016

Dai, Jiayun; Wang, Danxia; Zhang, Miao
Nano Letters, Vol. 16, Issue 5
DOI: 10.1021/acs.nanolett.6b00486

Electronic and Mechanical Properties of Graphene–Germanium Interfaces Grown by Chemical Vapor Deposition
journal, October 2015

Kiraly, Brian; Jacobberger, Robert M.; Mannix, Andrew J.
Nano Letters, Vol. 15, Issue 11
DOI: 10.1021/acs.nanolett.5b02833

Bond conserving rotation, adatoms and rest atoms in the reconstruction of Si() and Ge() surfaces: a first principles study
journal, November 2001

Takeuchi, Noboru
Surface Science, Vol. 494, Issue 1
DOI: 10.1016/S0039-6028(01)01465-0

Works referencing / citing this record:

Electronic and Interface Properties in Graphene Oxide/Hydrogen-Passivated Ge Heterostructure
journal, October 2018

Wang, Qian; Li, Xiang; Wu, Liyuan
physica status solidi (RRL) - Rapid Research Letters, Vol. 13, Issue 2
DOI: 10.1002/pssr.201800461

Driving chemical interactions at graphene-germanium van der Waals interfaces via thermal annealing
journal, November 2018

Kiraly, Brian; Mannix, Andrew J.; Jacobberger, Robert M.
Applied Physics Letters, Vol. 113, Issue 21
DOI: 10.1063/1.5053083

Reactive intercalation and oxidation at the buried graphene-germanium interface
journal, July 2019

Braeuninger-Weimer, Philipp; Burton, Oliver; Weatherup, Robert S.
APL Materials, Vol. 7, Issue 7
DOI: 10.1063/1.5098351

Reactive intercalation and oxidation at the buried graphene-germanium interface
text, January 2019

Braeuninger-Weimer, Philipp; Burton, Oliver; Weatherup, Robert
Apollo - University of Cambridge Repository
DOI: 10.17863/cam.41038

Figures / Tables found in this record:

Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.

Similar Records in DOE PAGES and OSTI.GOV collections:

In_xGa_1–xAs Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation

Journal Article Mohseni, Parsian K. ; Behnam, Ashkan ; Wood, Joshua D. ; ... - Nano Letters

The growth of high-density arrays of vertically oriented, single crystalline InAs NWs on graphene surfaces are realized through the van der Waals (vdW) epitaxy mechanism by metalorganic chemical vapor deposition (MOCVD). However, the growth of InGaAs NWs on graphene results in spontaneous phase separation starting from the beginning of growth, yielding a well-defined InAs–In_xGa_1–xAs (0.2 < x < 1) core–shell structure. The core–shell structure then terminates abruptly after about 2 μm in height, and axial growth of uniform composition In_xGa_1–xAs takes place without a change in the NW diameter. The In_xGa_1–xAs shell composition changes as a function of indium flow,more »« less
https://doi.org/10.1021/nl304569d

Full Text Available
Enhanced van der Waals epitaxy of germanium by out-of-plane dipole moment induced from transferred graphene on TiN/AlN multilayers

Journal Article Wang, Xuejing ; Kim, Yeonhoo ; Baldwin, Jon Kevin Scott ; ... - Journal of Applied Physics

We report recent advances in 3D/2D heterostructures have opened up tremendous opportunities in building highly flexible and durable optoelectronic devices. However, the inherit lack of interfacial bonding and low surface energy of van der Waals surfaces limit the nucleation and growth of 3D materials. Enhancing wettability by providing a porous buffer is effective in growing compound semiconductors on graphene while van der Waals epitaxy of Ge remains challenging. Here, the nucleation of Ge has been significantly improved from an islanded mode to granular modes by using a TiN/AlN multilayered buffer prior to Ge/graphene integration. Highly textured Ge growth with dominatingmore »« less
https://doi.org/10.1063/5.0065306

Full Text Available
Rotationally Commensurate Growth of MoS₂ on Epitaxial Graphene

Journal Article Liu, Xiaolong ; Balla, Itamar ; Bergeron, Hadallia ; ... - ACS Nano

Atomically thin MoS₂/graphene heterostructures are promising candidates for nanoelectronic and optoelectronic technologies. Among different graphene substrates, epitaxial graphene (EG) on SiC provides several potential advantages for such heterostructures, including high electronic quality, tunable substrate coupling, wafer-scale processability, and crystalline ordering that can template commensurate growth. Exploiting these attributes, we demonstrate here the thickness-controlled van der Waals epitaxial growth of MoS₂ on EG via chemical vapor deposition, giving rise to transfer-free synthesis of a two-dimensional heterostructure with registry between its constituent materials. The rotational commensurability observed between the MoS₂ and EG is driven by the energetically favorable alignment of their respectivemore »« less
Cited by 55
https://doi.org/10.1021/acsnano.5b06398

Full Text Available
Remote Epitaxial Growth of Compound Semiconductors through Graphene

Conference Lee, Kyusang ; Kim, Jeehwan

Epitaxial growth has been widely used for high-quality growth of crystalline materials. However, epitaxial growth techniques usually require lattice match and similar thermal expansion coefficient between growth material and substrate, which blocks this growth technique from wide applicability. Recently, van der Waals (vdW) epitaxy has been demonstrated that allows to relax the limitation of epitaxial growth. vdW epitaxy on layered or two-dimensional (2D) materials is mediated by weak vdW interactions. In addition to these interactions, a substrate below 2D materials also plays a role to intervene in the epitaxial growth process, leaving room to realize a novel epitaxial growth process:more »« less
https://doi.org/10.2172/1780764

Full Text Available
Dynamics of Antimonene–Graphene Van Der Waals Growth

Journal Article Fortin‐Deschênes, Matthieu ; Jacobberger, Robert M. ; Deslauriers, Charles‐Antoine ; ... - Advanced Materials

Van der Waals (vdW) heterostructures were recently introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous. With this perspective, herein, the growth dynamics of antimonene on graphene are investigated in real time. In situ low-energy electron microscopy reveals that nucleation predominantly occurs on 3D nuclei followed by amore »« less
Cited by 7
https://doi.org/10.1002/adma.201900569

Full Text Available

Similar Records

Title: Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Abstract

Citation Formats

Figures / Tables:

Atomic arrangements of 16×2 and (17,15,1) 2×1 structures on a Si(110) surface journal, September 1994

Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation journal, September 2011

In situ STM observations of ordering behaviors on Ge(110) surfaces and atomic geometry of the Ge{17151} facet journal, July 2004

X-ray Reflectivity as a Probe of Mineral-Fluid Interfaces: A User Guide journal, January 2002

Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001) journal, November 2013

RHEED Study of Surface Reconstruction at Clean Ge(110) Surface journal, October 1985

Two-dimensional gallium nitride realized via graphene encapsulation journal, August 2016

Reconstructions and phase transition of clean Ge(110) journal, March 2014

Electronic structure of the Si ( 110 ) − ( 16 × 2 ) surface: High-resolution ARPES and STM investigation journal, January 2009

Lateral adsorption geometry and site-specific electronic structure of a large organic chemisorbate on a metal surface journal, July 2006

High-resolution photoemission spectroscopy study of the single-domain Si ( 110 ) − 16 × 2 surface journal, March 2007

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation journal, December 2009

Structural elements on reconstructed Si and Ge ( 110 ) surfaces journal, July 2004

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium journal, April 2014

Surface structure determination by X-ray diffraction journal, May 1989

7 × 7 Reconstruction on Si(111) Resolved in Real Space journal, January 1983

Growth and electronic structure of graphene on semiconducting Ge(110) journal, October 2017

Direct Growth of Graphene Film on Germanium Substrate journal, August 2013

Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray Diffraction journal, March 1985

Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds journal, January 1996

Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D journal, January 2002

Organometallic Chemistry on Silicon and Germanium Surfaces journal, May 2002

Structural analysis of the indium-stabilized GaAs ( 001 ) − c ( 8 × 2 ) surface journal, December 2002

On the use of CCD area detectors for high-resolution specular X-ray reflectivity journal, June 2006

Electronic and energetic properties of Ge(110) pentagons journal, August 2014

Passivation of Germanium by Graphene journal, May 2017

Surface X-ray diffraction journal, May 1992

The rise of graphene journal, March 2007

X-Ray Evanescent-Wave Absorption and Emission journal, January 1983

Graphene on Ru(0001): a corrugated and chiral structure journal, April 2010

Ideal hydrogen termination of the Si (111) surface journal, February 1990

Elemental structure in Si(110)-“16×2” revealed by scanning tunneling microscopy journal, January 2000

An ab initio study on the atomic geometry of reconstructed Ge()16×2 surface journal, October 2003

How Graphene Islands Are Unidirectionally Aligned on the Ge(110) Surface journal, April 2016

Electronic and Mechanical Properties of Graphene–Germanium Interfaces Grown by Chemical Vapor Deposition journal, October 2015

Bond conserving rotation, adatoms and rest atoms in the reconstruction of Si() and Ge() surfaces: a first principles study journal, November 2001

Electronic and Interface Properties in Graphene Oxide/Hydrogen-Passivated Ge Heterostructure journal, October 2018

Driving chemical interactions at graphene-germanium van der Waals interfaces via thermal annealing journal, November 2018

Reactive intercalation and oxidation at the buried graphene-germanium interface journal, July 2019

Reactive intercalation and oxidation at the buried graphene-germanium interface text, January 2019

Atomic arrangements of 16×2 and (17,15,1) 2×1 structures on a Si(110) surface
journal, September 1994

Ambipolar doping in quasifree epitaxial graphene on SiC(0001) controlled by Ge intercalation
journal, September 2011

In situ STM observations of ordering behaviors on Ge(110) surfaces and atomic geometry of the Ge{17151} facet
journal, July 2004

X-ray Reflectivity as a Probe of Mineral-Fluid Interfaces: A User Guide
journal, January 2002

Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)
journal, November 2013

RHEED Study of Surface Reconstruction at Clean Ge(110) Surface
journal, October 1985

Two-dimensional gallium nitride realized via graphene encapsulation
journal, August 2016

Reconstructions and phase transition of clean Ge(110)
journal, March 2014

Electronic structure of the $Si (110) − (16 \times 2)$ surface: High-resolution ARPES and STM investigation
journal, January 2009

Lateral adsorption geometry and site-specific electronic structure of a large organic chemisorbate on a metal surface
journal, July 2006

High-resolution photoemission spectroscopy study of the single-domain $Si (110) − 16 \times 2$ surface
journal, March 2007

Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
journal, December 2009

Structural elements on reconstructed Si and $Ge (110)$ surfaces
journal, July 2004

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
journal, April 2014

Surface structure determination by X-ray diffraction
journal, May 1989

7 × 7 Reconstruction on Si(111) Resolved in Real Space
journal, January 1983

Growth and electronic structure of graphene on semiconducting Ge(110)
journal, October 2017

Direct Growth of Graphene Film on Germanium Substrate
journal, August 2013

Model-Independent Structure Determination of the InSb(111)2×2 Surface with Use of Synchrotron X-Ray Diffraction
journal, March 1985

Semiconductor Surface Reconstruction: The Structural Chemistry of Two-Dimensional Surface Compounds
journal, January 1996

Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D
journal, January 2002

Organometallic Chemistry on Silicon and Germanium Surfaces
journal, May 2002

Structural analysis of the indium-stabilized $GaAs (001) - c (8 \times 2)$ surface
journal, December 2002

On the use of CCD area detectors for high-resolution specular X-ray reflectivity
journal, June 2006

Electronic and energetic properties of Ge(110) pentagons
journal, August 2014

Passivation of Germanium by Graphene
journal, May 2017

Surface X-ray diffraction
journal, May 1992

The rise of graphene
journal, March 2007

X-Ray Evanescent-Wave Absorption and Emission
journal, January 1983

Graphene on Ru(0001): a corrugated and chiral structure
journal, April 2010

Ideal hydrogen termination of the Si (111) surface
journal, February 1990

Elemental structure in Si(110)-“16×2” revealed by scanning tunneling microscopy
journal, January 2000

An ab initio study on the atomic geometry of reconstructed Ge()16×2 surface
journal, October 2003

How Graphene Islands Are Unidirectionally Aligned on the Ge(110) Surface
journal, April 2016

Electronic and Mechanical Properties of Graphene–Germanium Interfaces Grown by Chemical Vapor Deposition
journal, October 2015

Bond conserving rotation, adatoms and rest atoms in the reconstruction of Si() and Ge() surfaces: a first principles study
journal, November 2001

Electronic and Interface Properties in Graphene Oxide/Hydrogen-Passivated Ge Heterostructure
journal, October 2018

Driving chemical interactions at graphene-germanium van der Waals interfaces via thermal annealing
journal, November 2018

Reactive intercalation and oxidation at the buried graphene-germanium interface
journal, July 2019

Reactive intercalation and oxidation at the buried graphene-germanium interface
text, January 2019