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Title: Epitaxial graphene-encapsulated surface reconstruction of Ge(110)

Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 x 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. As a result, X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [3] ;  [1] ;  [4] ;  [1]
  1. Northwestern Univ., Evanston, IL (United States)
  2. Northwestern Univ., Evanston, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Univ. of Wisconsin, Madison, WI (United States)
  4. Argonne National Lab. (ANL), Argonne, IL (United States)
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 4; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); US Department of the Navy, Office of Naval Research (ONR); Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1482106
Alternate Identifier(s):
OSTI ID: 1433027

Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., and Bedzyk, Michael J.. Epitaxial graphene-encapsulated surface reconstruction of Ge(110). United States: N. p., Web. doi:10.1103/PhysRevMaterials.2.044004.
Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., & Bedzyk, Michael J.. Epitaxial graphene-encapsulated surface reconstruction of Ge(110). United States. doi:10.1103/PhysRevMaterials.2.044004.
Campbell, Gavin P., Kiraly, Brian, Jacobberger, Robert M., Mannix, Andrew J., Arnold, Michael S., Hersam, Mark C., Guisinger, Nathan P., and Bedzyk, Michael J.. 2018. "Epitaxial graphene-encapsulated surface reconstruction of Ge(110)". United States. doi:10.1103/PhysRevMaterials.2.044004.
@article{osti_1482106,
title = {Epitaxial graphene-encapsulated surface reconstruction of Ge(110)},
author = {Campbell, Gavin P. and Kiraly, Brian and Jacobberger, Robert M. and Mannix, Andrew J. and Arnold, Michael S. and Hersam, Mark C. and Guisinger, Nathan P. and Bedzyk, Michael J.},
abstractNote = {Understanding and engineering the properties of crystalline surfaces has been critical in achieving functional electronics at the nanoscale. Employing scanning tunneling microscopy, surface x-ray diffraction, and high-resolution x-ray reflectivity experiments, we present a thorough study of epitaxial graphene (EG)/Ge(110) and report a Ge(110) "6 x 2" reconstruction stabilized by the presence of epitaxial graphene unseen in group-IV semiconductor surfaces. As a result, X-ray studies reveal that graphene resides atop the surface reconstruction with a 0.34 nm van der Waals (vdW) gap and provides protection from ambient degradation.},
doi = {10.1103/PhysRevMaterials.2.044004},
journal = {Physical Review Materials},
number = 4,
volume = 2,
place = {United States},
year = {2018},
month = {4}
}

Works referenced in this record:

Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
journal, April 2014

The rise of graphene
journal, March 2007
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