skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing

Abstract

This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introduction, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, to a Neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Chapter II, we describe the main components of a possible solid-state implementation. In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing. In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Chapter V while existing implementations are described in Chapter VI. Chapter VII presents applications to practical problems. We list in Chapter VIII important basic research challenges and open issues. Wemore » discuss issues related to specific implementations, novel materials, devices and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling and integration into a Neuromorphic computer may bring us closer to the development of a machine that rivals the brain.« less

Authors:
 [1];  [2];  [3];  [1]
  1. Univ. of California, San Diego, CA (United States)
  2. Univ. of Los Andes, Bogotá (Colombia)
  3. Univ. Paris-Sud, Orsay (France)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C); Univ. of California, San Diego, CA (United States); Univ. Paris-Sud, Orsay (France); Univ. of Los Andes, Bogotá (Colombia)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Office of Naval Research (ONR) (United States); Univ. of Los Andes (Colombia)
OSTI Identifier:
1481895
Grant/Contract Number:  
SC0019273; N00014-15-1-2848; 120471250659; 120424054303
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 124; Journal Issue: 21; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 97 MATHEMATICS AND COMPUTING; 36 MATERIALS SCIENCE

Citation Formats

del Valle, Javier, Ramirez, Juan Gabriel, Rozenberg, Marcelo J., and Schuller, Ivan K. Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing. United States: N. p., 2018. Web. doi:10.1063/1.5047800.
del Valle, Javier, Ramirez, Juan Gabriel, Rozenberg, Marcelo J., & Schuller, Ivan K. Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing. United States. doi:10.1063/1.5047800.
del Valle, Javier, Ramirez, Juan Gabriel, Rozenberg, Marcelo J., and Schuller, Ivan K. Tue . "Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing". United States. doi:10.1063/1.5047800. https://www.osti.gov/servlets/purl/1481895.
@article{osti_1481895,
title = {Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing},
author = {del Valle, Javier and Ramirez, Juan Gabriel and Rozenberg, Marcelo J. and Schuller, Ivan K.},
abstractNote = {This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introduction, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, to a Neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Chapter II, we describe the main components of a possible solid-state implementation. In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing. In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Chapter V while existing implementations are described in Chapter VI. Chapter VII presents applications to practical problems. We list in Chapter VIII important basic research challenges and open issues. We discuss issues related to specific implementations, novel materials, devices and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling and integration into a Neuromorphic computer may bring us closer to the development of a machine that rivals the brain.},
doi = {10.1063/1.5047800},
journal = {Journal of Applied Physics},
number = 21,
volume = 124,
place = {United States},
year = {2018},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 11 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Neuromorphic computing with nanoscale spintronic oscillators
journal, July 2017

  • Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu
  • Nature, Vol. 547, Issue 7664
  • DOI: 10.1038/nature23011

Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application
journal, June 2015

  • Prakash, A.; Deleruyelle, D.; Song, J.
  • Applied Physics Letters, Vol. 106, Issue 23
  • DOI: 10.1063/1.4922446

Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeOx/W Memristor
journal, April 2012

  • Maikap, S.; Rahaman, S. Z.
  • ECS Transactions, Vol. 45, Issue 6
  • DOI: 10.1149/1.3700961

Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films
journal, January 2007

  • Lin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi
  • Journal of The Electrochemical Society, Vol. 154, Issue 9
  • DOI: 10.1149/1.2750450

Deep learning
journal, May 2015

  • LeCun, Yann; Bengio, Yoshua; Hinton, Geoffrey
  • Nature, Vol. 521, Issue 7553
  • DOI: 10.1038/nature14539

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
journal, March 2012


Electric-Field-Driven Resistive Switching in the Dissipative Hubbard Model
journal, June 2015


Thermochemical resistive switching: materials, mechanisms, and scaling projections
journal, July 2011


Electrical breakdown in a V 2 O 3 device at the insulator-to-metal transition
journal, March 2013


Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
journal, September 2014

  • Kim, Sungho; Choi, ShinHyun; Lee, Jihang
  • ACS Nano, Vol. 8, Issue 10
  • DOI: 10.1021/nn503464q

Observation of conducting filament growth in nanoscale resistive memories
journal, January 2012

  • Yang, Yuchao; Gao, Peng; Gaba, Siddharth
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms1737

Stochasticity Modeling in Memristors
journal, January 2016

  • Naous, Rawan; Al-Shedivat, Maruan; Salama, Khaled Nabil
  • IEEE Transactions on Nanotechnology, Vol. 15, Issue 1
  • DOI: 10.1109/TNANO.2015.2493960

Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
journal, January 2015

  • Guo, D. Y.; Wu, Z. P.; An, Y. H.
  • Applied Physics Letters, Vol. 106, Issue 4
  • DOI: 10.1063/1.4907174

Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
journal, June 2018


Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition in VO 2
journal, January 2013


Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices
journal, July 2009

  • Yang, Min Kyu; Park, Jae-Wan; Ko, Tae Kuk
  • Applied Physics Letters, Vol. 95, Issue 4
  • DOI: 10.1063/1.3191674

Reproducible resistance switching in polycrystalline NiO films
journal, December 2004

  • Seo, S.; Lee, M. J.; Seo, D. H.
  • Applied Physics Letters, Vol. 85, Issue 23
  • DOI: 10.1063/1.1831560

Random Circuit Breaker Network Model for Unipolar Resistance Switching
journal, March 2008

  • Chae, Seung Chul; Lee, Jae Sung; Kim, Sejin
  • Advanced Materials, Vol. 20, Issue 6
  • DOI: 10.1002/adma.200702024

Effect of electrode material on the resistance switching of Cu2O film
journal, December 2007

  • Yang, Woo-Young; Rhee, Shi-Woo
  • Applied Physics Letters, Vol. 91, Issue 23
  • DOI: 10.1063/1.2822403

Resistance switching in oxide thin films
journal, July 2008


ReRAM technology; challenges and prospects
journal, January 2012

  • Akinaga, Hiro; Shima, Hisashi
  • IEICE Electronics Express, Vol. 9, Issue 8
  • DOI: 10.1587/elex.9.795

Nanosecond switching in GeTe phase change memory cells
journal, July 2009

  • Bruns, G.; Merkelbach, P.; Schlockermann, C.
  • Applied Physics Letters, Vol. 95, Issue 4
  • DOI: 10.1063/1.3191670

Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies
journal, June 2012

  • Greiner, Mark T.; Chai, Lily; Helander, Michael G.
  • Advanced Functional Materials, Vol. 22, Issue 21
  • DOI: 10.1002/adfm.201200615

Shock Waves and Commutation Speed of Memristors
journal, March 2016


Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
journal, December 2011


Stochastic phase-change neurons
journal, May 2016

  • Tuma, Tomas; Pantazi, Angeliki; Le Gallo, Manuel
  • Nature Nanotechnology, Vol. 11, Issue 8
  • DOI: 10.1038/nnano.2016.70

Writing to and reading from a nano-scale crossbar memory based on memristors
journal, September 2009


A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
journal, February 2017

  • van de Burgt, Yoeri; Lubberman, Ewout; Fuller, Elliot J.
  • Nature Materials, Vol. 16, Issue 4
  • DOI: 10.1038/nmat4856

Colossal Ionic Conductivity at Interfaces of Epitaxial ZrO2:Y2O3/SrTiO3 Heterostructures
journal, August 2008

  • Garcia-Barriocanal, J.; Rivera-Calzada, A.; Varela, M.
  • Science, Vol. 321, Issue 5889
  • DOI: 10.1126/science.1156393

Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators
journal, May 2013

  • Stoliar, Pablo; Cario, Laurent; Janod, Etiene
  • Advanced Materials, Vol. 25, Issue 23
  • DOI: 10.1002/adma.201301113

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
journal, January 2018


Neuromorphic Silicon Neuron Circuits
journal, January 2011

  • Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia
  • Frontiers in Neuroscience, Vol. 5
  • DOI: 10.3389/fnins.2011.00073

Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
journal, February 2013


Exploiting Memristors for Compressive Sampling of Sensory Signals
journal, December 2018

  • Qian, Fengyu; Gong, Yanping; Huang, Guoxian
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 26, Issue 12
  • DOI: 10.1109/TVLSI.2018.2840446

Mechanism for bipolar resistive switching in transition-metal oxides
journal, March 2010


Current switching of resistive states in magnetoresistive manganites
journal, July 1997

  • Asamitsu, A.; Tomioka, Y.; Kuwahara, H.
  • Nature, Vol. 388, Issue 6637
  • DOI: 10.1038/40363

Neuromorphic electronic systems
journal, January 1990


A silicon neuron
journal, December 1991

  • Mahowald, Misha; Douglas, Rodney
  • Nature, Vol. 354, Issue 6354
  • DOI: 10.1038/354515a0

Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices
journal, November 2017


Ultrafast reversible phase change in GeSb films for erasable optical storage
journal, June 1992

  • Afonso, C. N.; Solis, J.; Catalina, F.
  • Applied Physics Letters, Vol. 60, Issue 25
  • DOI: 10.1063/1.106772

Nanoionics-based resistive switching memories
journal, November 2007

  • Waser, Rainer; Aono, Masakazu
  • Nature Materials, Vol. 6, Issue 11, p. 833-840
  • DOI: 10.1038/nmat2023

High switching endurance in TaOx memristive devices
journal, December 2010

  • Yang, J. Joshua; Zhang, M. -X.; Strachan, John Paul
  • Applied Physics Letters, Vol. 97, Issue 23
  • DOI: 10.1063/1.3524521

High Speed Overwritable Phase Change Optical Disk Material
journal, January 1987

  • Yamada, Noboru; Ohno, Eiji; Akahira, Nobuo
  • Japanese Journal of Applied Physics, Vol. 26, Issue S4
  • DOI: 10.7567/JJAPS.26S4.61

A scalable neuristor built with Mott memristors
journal, December 2012

  • Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley
  • Nature Materials, Vol. 12, Issue 2
  • DOI: 10.1038/nmat3510

Electrically tailored resistance switching in silicon oxide
journal, October 2012


Resistance switching properties of molybdenum oxide films
journal, May 2012


Nonthermal and purely electronic resistive switching in a Mott memory
journal, July 2014


Quantitative Mapping of Phase Coexistence in Mott-Peierls Insulator during Electronic and Thermally Driven Phase Transition
journal, January 2015

  • Madan, Himanshu; Jerry, Matthew; Pogrebnyakov, Alexej
  • ACS Nano, Vol. 9, Issue 2
  • DOI: 10.1021/nn507048d

Fully memristive neural networks for pattern classification with unsupervised learning
journal, February 2018


Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
journal, March 2006

  • Szot, Krzysztof; Speier, Wolfgang; Bihlmayer, Gustav
  • Nature Materials, Vol. 5, Issue 4
  • DOI: 10.1038/nmat1614

Understanding electroforming in bipolar resistive switching oxides
journal, January 2011

  • Gomez-Marlasca, F.; Ghenzi, N.; Rozenberg, M. J.
  • Applied Physics Letters, Vol. 98, Issue 4
  • DOI: 10.1063/1.3537957

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
journal, December 2010

  • Goux, L.; Czarnecki, P.; Chen, Y. Y.
  • Applied Physics Letters, Vol. 97, Issue 24
  • DOI: 10.1063/1.3527086

Criticality in the Brain: Evidence and Implications for Neuromorphic Computing
journal, March 2018


Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
journal, October 2005


Reproducible switching effect in thin oxide films for memory applications
journal, July 2000

  • Beck, A.; Bednorz, J. G.; Gerber, Ch.
  • Applied Physics Letters, Vol. 77, Issue 1
  • DOI: 10.1063/1.126902

Nonequilibrium dynamical mean-field theory and its applications
journal, June 2014


Selection of Optimized Materials for CBRAM Based on HT-XRD and Electrical Test Results
journal, January 2009

  • Bruchhaus, Rainer; Honal, Matthias; Symanczyk, Ralf
  • Journal of The Electrochemical Society, Vol. 156, Issue 9
  • DOI: 10.1149/1.3160570

Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides
journal, April 2007


Electric-pulse-induced reversible resistance change effect in magnetoresistive films
journal, May 2000

  • Liu, S. Q.; Wu, N. J.; Ignatiev, A.
  • Applied Physics Letters, Vol. 76, Issue 19
  • DOI: 10.1063/1.126464

The Neuristor
journal, September 1960


Threshold switching and electrical self-oscillation in niobium oxide films
journal, September 2016

  • Liu, Xinjun; Li, Shuai; Nandi, Sanjoy Kumar
  • Journal of Applied Physics, Vol. 120, Issue 12
  • DOI: 10.1063/1.4963288

Completely Erasable Phase Change Optical Disk
journal, February 1992

  • Iwasaki, Hiroko; Ide, Yukio; Harigaya, Makoto
  • Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 2B
  • DOI: 10.1143/JJAP.31.461

Avalanches in vanadium sesquioxide nanodevices
journal, August 2015


Memory effects in complex materials and nanoscale systems
journal, April 2011


Resolving the VO 2 controversy: Mott mechanism dominates the insulator-to-metal transition
journal, January 2017


Adaptive oxide electronics: A review
journal, October 2011

  • Ha, Sieu D.; Ramanathan, Shriram
  • Journal of Applied Physics, Vol. 110, Issue 7
  • DOI: 10.1063/1.3640806

Metal–Oxide RRAM
journal, June 2012

  • Wong, H.-S. Philip; Lee, Heng-Yuan; Yu, Shimeng
  • Proceedings of the IEEE, Vol. 100, Issue 6, p. 1951-1970
  • DOI: 10.1109/JPROC.2012.2190369

Unipolar resistive switching behaviors in amorphous lutetium oxide films
journal, October 2010

  • Gao, Xu; Xia, Yidong; Xu, Bo
  • Journal of Applied Physics, Vol. 108, Issue 7
  • DOI: 10.1063/1.3490758

Ultralow power artificial synapses using nanotextured magnetic Josephson junctions
journal, January 2018

  • Schneider, Michael L.; Donnelly, Christine A.; Russek, Stephen E.
  • Science Advances, Vol. 4, Issue 1
  • DOI: 10.1126/sciadv.1701329

First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa 4 Se 8
journal, August 2014


On the stochastic nature of resistive switching in Cu doped Ge 0.3 Se 0.7 based memory devices
journal, September 2011

  • Soni, R.; Meuffels, P.; Staikov, G.
  • Journal of Applied Physics, Vol. 110, Issue 5
  • DOI: 10.1063/1.3631013

Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials
journal, October 2004

  • Redaelli, A.; Pirovano, A.; Pellizzer, F.
  • IEEE Electron Device Letters, Vol. 25, Issue 10
  • DOI: 10.1109/LED.2004.836032

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
journal, June 2008

  • Xu, Nuo; Liu, Lifeng; Sun, Xiao
  • Applied Physics Letters, Vol. 92, Issue 23
  • DOI: 10.1063/1.2945278

Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film
journal, September 2015

  • Kyu Yang, Min; Ju, Hyunsu; Hwan Kim, Gun
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep14053

Data Clustering using Memristor Networks
journal, May 2015

  • Choi, Shinhyun; Sheridan, Patrick; Lu, Wei D.
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep10492

A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator
journal, January 2017

  • Stoliar, Pablo; Tranchant, Julien; Corraze, Benoit
  • Advanced Functional Materials, Vol. 27, Issue 11
  • DOI: 10.1002/adfm.201604740

Mechanism of Electric-Pulse-Induced Resistance Switching in Manganites
journal, March 2007


CMOS compatible electrode materials selection in oxide-based memory devices
journal, July 2016

  • Zhuo, V. Y. -Q.; Li, M.; Guo, Y.
  • Journal of Applied Physics, Vol. 120, Issue 2
  • DOI: 10.1063/1.4955044

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010

  • Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck
  • Nature Nanotechnology, Vol. 5, Issue 2
  • DOI: 10.1038/nnano.2009.456

Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
journal, October 2009

  • Cao, Xun; Li, Xiaomin; Gao, Xiangdong
  • Journal of Applied Physics, Vol. 106, Issue 7
  • DOI: 10.1063/1.3236573

Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects
journal, May 2015


Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
journal, April 2014

  • Brockman, Justin S.; Gao, Li; Hughes, Brian
  • Nature Nanotechnology, Vol. 9, Issue 6
  • DOI: 10.1038/nnano.2014.71

Phase-change materials for non-volatile photonic applications
journal, August 2017


Superconducting Optoelectronic Circuits for Neuromorphic Computing
journal, March 2017


Multiple Avalanches across the Metal-Insulator Transition of Vanadium Oxide Nanoscaled Junctions
journal, July 2008


Two centuries of memristors
journal, May 2012

  • Prodromakis, Themistoklis; Toumazou, Christofer; Chua, Leon
  • Nature Materials, Vol. 11, Issue 6
  • DOI: 10.1038/nmat3338

Phase Change Materials and Their Application to Nonvolatile Memories
journal, August 2009

  • Raoux, Simone; Wełnic, Wojciech; Ielmini, Daniele
  • Chemical Reviews, Vol. 110, Issue 1
  • DOI: 10.1021/cr900040x

Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM
journal, February 2010


Conductive bridging random access memory—materials, devices and applications
journal, October 2016


Phase-change materials for rewriteable data storage
journal, November 2007

  • Wuttig, Matthias; Yamada, Noboru
  • Nature Materials, Vol. 6, Issue 11
  • DOI: 10.1038/nmat2009

Nonvolatile Memory with Multilevel Switching: A Basic Model
journal, April 2004


Analogue signal and image processing with large memristor crossbars
journal, December 2017


Electrochemical metallization cells—blending nanoionics into nanoelectronics?
journal, February 2012

  • Lu, Wei; Jeong, Doo Seok; Kozicki, Michael
  • MRS Bulletin, Vol. 37, Issue 2
  • DOI: 10.1557/mrs.2012.5

Interfacial phase-change memory
journal, July 2011

  • Simpson, R. E.; Fons, P.; Kolobov, A. V.
  • Nature Nanotechnology, Vol. 6, Issue 8
  • DOI: 10.1038/nnano.2011.96

Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits
journal, June 2018


Resistance switching in the metal deficient-type oxides: NiO and CoO
journal, July 2007

  • Shima, Hisashi; Takano, Fumiyoshi; Akinaga, Hiro
  • Applied Physics Letters, Vol. 91, Issue 1
  • DOI: 10.1063/1.2753101

Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag 2 S Nanoscale Ionic Conductor
journal, March 2010

  • Xu, Zhi; Bando, Yoshio; Wang, Wenlong
  • ACS Nano, Vol. 4, Issue 5
  • DOI: 10.1021/nn100483a

Tuning the resistive switching properties of TiO 2− x films
journal, March 2015

  • Ghenzi, N.; Rozenberg, M. J.; Llopis, R.
  • Applied Physics Letters, Vol. 106, Issue 12
  • DOI: 10.1063/1.4916516

Nanosecond threshold switching of GeTe 6 cells and their potential as selector devices
journal, April 2012

  • Anbarasu, M.; Wimmer, Martin; Bruns, Gunnar
  • Applied Physics Letters, Vol. 100, Issue 14
  • DOI: 10.1063/1.3700743

Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
journal, June 2017

  • Li, Can; Han, Lili; Jiang, Hao
  • Nature Communications, Vol. 8, Issue 1
  • DOI: 10.1038/ncomms15666

Reservoir computing using dynamic memristors for temporal information processing
journal, December 2017


First demonstration of “Leaky Integrate and Fire” artificial neuron behavior on (V0.95Cr0.05)2O3 thin film
journal, May 2018

  • Adda, Coline; Cario, Laurent; Tranchant, Julien
  • MRS Communications, Vol. 8, Issue 03
  • DOI: 10.1557/mrc.2018.90

Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device
journal, May 2010

  • Huang, Hsin-Hung; Shih, Wen-Chieh; Lai, Chih-Huang
  • Applied Physics Letters, Vol. 96, Issue 19
  • DOI: 10.1063/1.3429024

Nanoscale Memristor Device as Synapse in Neuromorphic Systems
journal, April 2010

  • Jo, Sung Hyun; Chang, Ting; Ebong, Idongesit
  • Nano Letters, Vol. 10, Issue 4, p. 1297-1301
  • DOI: 10.1021/nl904092h

State Dynamics and Modeling of Tantalum Oxide Memristors
journal, July 2013

  • Strachan, John Paul; Torrezan, Antonio C.; Miao, Feng
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 7
  • DOI: 10.1109/TED.2013.2264476

Manganite-based memristive heterojunction with tunable non-linear I–V characteristics
journal, January 2015

  • Lee, Hong-Sub; Park, Hyung-Ho; Rozenberg, M. J.
  • Nanoscale, Vol. 7, Issue 15
  • DOI: 10.1039/C5NR00861A

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
journal, September 2015

  • Wedig, Anja; Luebben, Michael; Cho, Deok-Yong
  • Nature Nanotechnology, Vol. 11, Issue 1
  • DOI: 10.1038/nnano.2015.221

Dynamical Singlets and Correlation-Assisted Peierls Transition in V O 2
journal, January 2005


A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
journal, December 2011

  • Kim, Kuk-Hwan; Gaba, Siddharth; Wheeler, Dana
  • Nano Letters, Vol. 12, Issue 1
  • DOI: 10.1021/nl203687n

Resistive Switching in Mott Insulators and Correlated Systems
journal, July 2015

  • Janod, Etienne; Tranchant, Julien; Corraze, Benoit
  • Advanced Functional Materials, Vol. 25, Issue 40
  • DOI: 10.1002/adfm.201500823

In-memory computing with resistive switching devices
journal, June 2018


Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
journal, June 2018

  • Mehonic, Adnan; Shluger, Alexander L.; Gao, David
  • Advanced Materials, Vol. 30, Issue 43
  • DOI: 10.1002/adma.201801187

Dielectric breakdown of one-dimensional Mott insulators Sr 2 CuO 3 and SrCuO 2
journal, September 2000


Memristive devices for computing
journal, January 2013

  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
journal, June 2011

  • Ohno, Takeo; Hasegawa, Tsuyoshi; Tsuruoka, Tohru
  • Nature Materials, Vol. 10, Issue 8
  • DOI: 10.1038/nmat3054

Bipolar resistive switching of chromium oxide for resistive random access memory
journal, August 2011

  • Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang
  • Solid-State Electronics, Vol. 62, Issue 1
  • DOI: 10.1016/j.sse.2010.12.014

Non-volatile resistive switching in the dielectric superconductor YBa 2 Cu 3 O 7−δ
journal, December 2008


Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
journal, August 2005

  • Choi, B. J.; Jeong, D. S.; Kim, S. K.
  • Journal of Applied Physics, Vol. 98, Issue 3
  • DOI: 10.1063/1.2001146

Memristive switching mechanism for metal/oxide/metal nanodevices
journal, June 2008

  • Yang, J. Joshua; Pickett, Matthew D.; Li, Xuema
  • Nature Nanotechnology, Vol. 3, Issue 7
  • DOI: 10.1038/nnano.2008.160

Sparse coding with memristor networks
journal, May 2017

  • Sheridan, Patrick M.; Cai, Fuxi; Du, Chao
  • Nature Nanotechnology, Vol. 12, Issue 8
  • DOI: 10.1038/nnano.2017.83

Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films
journal, April 2017


The missing memristor found
journal, May 2008

  • Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.
  • Nature, Vol. 453, Issue 7191
  • DOI: 10.1038/nature06932

Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application
journal, April 2009


TiO 2 —a prototypical memristive material
journal, May 2011


Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
journal, August 2008

  • Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo J.
  • Japanese Journal of Applied Physics, Vol. 47, Issue 8
  • DOI: 10.1143/JJAP.47.6266

Electrochemical metallization memories—fundamentals, applications, prospects
journal, May 2011


Training and operation of an integrated neuromorphic network based on metal-oxide memristors
journal, May 2015

  • Prezioso, M.; Merrikh-Bayat, F.; Hoskins, B. D.
  • Nature, Vol. 521, Issue 7550
  • DOI: 10.1038/nature14441

Metal-insulator transitions
journal, October 1998

  • Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori
  • Reviews of Modern Physics, Vol. 70, Issue 4, p. 1039-1263
  • DOI: 10.1103/RevModPhys.70.1039

Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
journal, August 2017

  • Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley
  • Nature, Vol. 548, Issue 7667
  • DOI: 10.1038/nature23307

Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices
journal, June 2016


Understanding the resistive switching characteristics and mechanism in active SiO x -based resistive switching memory
journal, December 2012

  • Chang, Yao-Feng; Chen, Pai-Yu; Fowler, Burt
  • Journal of Applied Physics, Vol. 112, Issue 12
  • DOI: 10.1063/1.4769218

Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
journal, June 2014

  • Yang, Yuchao; Gao, Peng; Li, Linze
  • Nature Communications, Vol. 5, Article No. 4232
  • DOI: 10.1038/ncomms5232

Nanofilament Formation and Regeneration During Cu/Al 2 O 3 Resistive Memory Switching
journal, May 2015


Electroforming and resistance-switching mechanism in a magnetite thin film
journal, September 2007

  • Odagawa, A.; Katoh, Y.; Kanzawa, Y.
  • Applied Physics Letters, Vol. 91, Issue 13
  • DOI: 10.1063/1.2789178

Metal-Insulator Transitions in Pure and Doped V 2 O 3
journal, March 1973


On Computable Numbers, with an Application to the Entscheidungsproblem
journal, January 1937


Improvement of SET variability in TaO x based resistive RAM devices
journal, October 2017

  • Schönhals, Alexander; Waser, Rainer; Wouters, Dirk J.
  • Nanotechnology, Vol. 28, Issue 46
  • DOI: 10.1088/1361-6528/aa8f89

Resistive switching in transition metal oxides
journal, June 2008


Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

  • Waser, Rainer; Dittmann, Regina; Staikov, Georgi
  • Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
  • DOI: 10.1002/adma.200900375

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
journal, September 2016

  • Wang, Zhongrui; Joshi, Saumil; Savel’ev, Sergey E.
  • Nature Materials, Vol. 16, Issue 1
  • DOI: 10.1038/nmat4756

Resistance switching in polycrystalline BiFeO3 thin films
journal, July 2010

  • Yin, Kuibo; Li, Mi; Liu, Yiwei
  • Applied Physics Letters, Vol. 97, Issue 4
  • DOI: 10.1063/1.3467838

Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions
journal, January 1996

  • Georges, Antoine; Kotliar, Gabriel; Krauth, Werner
  • Reviews of Modern Physics, Vol. 68, Issue 1
  • DOI: 10.1103/RevModPhys.68.13

Enhanced metal–insulator transition in V2O3 by thermal quenching after growth
journal, March 2018


Phase Change Memory
journal, December 2010


Analysis of the row grounding technique in a memristor-based crossbar array: ROW GROUNDING TECHNIQUE ANALYSIS IN A MEMRISTOR-BASED CROSSBAR ARRAY
journal, November 2017

  • Dozortsev, Alexander; Goldshtein, Israel; Kvatinsky, Shahar
  • International Journal of Circuit Theory and Applications, Vol. 46, Issue 1
  • DOI: 10.1002/cta.2399

Spike-timing dependent plasticity
journal, January 2010


Quantum-size effects in hafnium-oxide resistive switching
journal, May 2013

  • Long, Shibing; Lian, Xiaojuan; Cagli, Carlo
  • Applied Physics Letters, Vol. 102, Issue 18
  • DOI: 10.1063/1.4802265

Equivalent-accuracy accelerated neural-network training using analogue memory
journal, June 2018


Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor
journal, June 2016

  • Jiang, Hao; Han, Lili; Lin, Peng
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep28525

Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5
journal, June 2005


Direct resistance profile for an electrical pulse induced resistance change device
journal, December 2005

  • Chen, X.; Wu, N. J.; Strozier, J.
  • Applied Physics Letters, Vol. 87, Issue 23
  • DOI: 10.1063/1.2139843

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
journal, May 2016


Resistive Switches and Memories from Silicon Oxide
journal, October 2010

  • Yao, Jun; Sun, Zhengzong; Zhong, Lin
  • Nano Letters, Vol. 10, Issue 10
  • DOI: 10.1021/nl102255r

    Works referencing / citing this record:

    Bipolar resistive switching characteristics of amorphous SrTiO 3 thin films prepared by the sol-gel process
    journal, June 2019


    Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain
    journal, June 2019


    Dopamine-like STDP modulation in nanocomposite memristors
    journal, June 2019

    • Nikiruy, K. E.; Emelyanov, A. V.; Demin, V. A.
    • AIP Advances, Vol. 9, Issue 6
    • DOI: 10.1063/1.5111083

    Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain
    journal, June 2019


    Dopamine-like STDP modulation in nanocomposite memristors
    journal, June 2019

    • Nikiruy, K. E.; Emelyanov, A. V.; Demin, V. A.
    • AIP Advances, Vol. 9, Issue 6
    • DOI: 10.1063/1.5111083

    Bipolar resistive switching characteristics of amorphous SrTiO 3 thin films prepared by the sol-gel process
    journal, June 2019


    Simple design of memristive counters and their applications in automatic irrigation system
    journal, January 2020

    • Raj, P. Michael Preetam; Louis, V. Jeffry; Viswakumar, Aditya
    • IET Circuits, Devices & Systems, Vol. 14, Issue 1
    • DOI: 10.1049/iet-cds.2019.0218