Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing
Abstract
This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introduction, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, to a Neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Chapter II, we describe the main components of a possible solid-state implementation. In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing. In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Chapter V while existing implementations are described in Chapter VI. Chapter VII presents applications to practical problems. We list in Chapter VIII important basic research challenges and open issues. Wemore »
- Authors:
-
- Univ. of California, San Diego, CA (United States)
- Univ. of Los Andes, Bogotá (Colombia)
- Univ. Paris-Sud, Orsay (France)
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Quantum Materials for Energy Efficient Neuromorphic Computing (Q-MEEN-C); Univ. of California, San Diego, CA (United States); Univ. Paris-Sud, Orsay (France); Univ. of Los Andes, Bogotá (Colombia)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); Office of Naval Research (ONR) (United States); Univ. of Los Andes (Colombia)
- OSTI Identifier:
- 1481895
- Grant/Contract Number:
- SC0019273; N00014-15-1-2848; 120471250659; 120424054303
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 124; Journal Issue: 21; Journal ID: ISSN 0021-8979
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 97 MATHEMATICS AND COMPUTING; 36 MATERIALS SCIENCE
Citation Formats
del Valle, Javier, Ramirez, Juan Gabriel, Rozenberg, Marcelo J., and Schuller, Ivan K.. Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing. United States: N. p., 2018.
Web. doi:10.1063/1.5047800.
del Valle, Javier, Ramirez, Juan Gabriel, Rozenberg, Marcelo J., & Schuller, Ivan K.. Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing. United States. https://doi.org/10.1063/1.5047800
del Valle, Javier, Ramirez, Juan Gabriel, Rozenberg, Marcelo J., and Schuller, Ivan K.. Tue .
"Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing". United States. https://doi.org/10.1063/1.5047800. https://www.osti.gov/servlets/purl/1481895.
@article{osti_1481895,
title = {Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing},
author = {del Valle, Javier and Ramirez, Juan Gabriel and Rozenberg, Marcelo J. and Schuller, Ivan K.},
abstractNote = {This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxides materials, which exhibit unique properties that emulate key functionalities needed for this application. In the Introduction, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, to a Neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Chapter II, we describe the main components of a possible solid-state implementation. In Chapter III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for Neuromorphic computing. In Chapter IV we describe why transition metal oxides, are promising materials for future Neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Chapter V while existing implementations are described in Chapter VI. Chapter VII presents applications to practical problems. We list in Chapter VIII important basic research challenges and open issues. We discuss issues related to specific implementations, novel materials, devices and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling and integration into a Neuromorphic computer may bring us closer to the development of a machine that rivals the brain.},
doi = {10.1063/1.5047800},
journal = {Journal of Applied Physics},
number = 21,
volume = 124,
place = {United States},
year = {2018},
month = {12}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Search WorldCat to find libraries that may hold this journal
Cited by: 117 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Neuromorphic computing with nanoscale spintronic oscillators
journal, July 2017
- Torrejon, Jacob; Riou, Mathieu; Araujo, Flavio Abreu
- Nature, Vol. 547, Issue 7664
Resistance controllability and variability improvement in a TaO x -based resistive memory for multilevel storage application
journal, June 2015
- Prakash, A.; Deleruyelle, D.; Song, J.
- Applied Physics Letters, Vol. 106, Issue 23
Bipolar Resistive Switching Memory Characteristics Using Al/Cu/GeOx/W Memristor
journal, April 2012
- Maikap, S.; Rahaman, S. Z.
- ECS Transactions, Vol. 45, Issue 6
Bistable Resistive Switching in Al[sub 2]O[sub 3] Memory Thin Films
journal, January 2007
- Lin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi
- Journal of The Electrochemical Society, Vol. 154, Issue 9
Deep learning
journal, May 2015
- LeCun, Yann; Bengio, Yoshua; Hinton, Geoffrey
- Nature, Vol. 521, Issue 7553
Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
journal, March 2012
- Liu, Qi; Sun, Jun; Lv, Hangbing
- Advanced Materials, Vol. 24, Issue 14
Electric-Field-Driven Resistive Switching in the Dissipative Hubbard Model
journal, June 2015
- Li, Jiajun; Aron, Camille; Kotliar, Gabriel
- Physical Review Letters, Vol. 114, Issue 22
Thermochemical resistive switching: materials, mechanisms, and scaling projections
journal, July 2011
- Ielmini, Daniele; Bruchhaus, Rainer; Waser, Rainer
- Phase Transitions, Vol. 84, Issue 7
Electrical breakdown in a V 2 O 3 device at the insulator-to-metal transition
journal, March 2013
- Guénon, S.; Scharinger, S.; Wang, Siming
- EPL (Europhysics Letters), Vol. 101, Issue 5
Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping
journal, September 2014
- Kim, Sungho; Choi, ShinHyun; Lee, Jihang
- ACS Nano, Vol. 8, Issue 10
Observation of conducting filament growth in nanoscale resistive memories
journal, January 2012
- Yang, Yuchao; Gao, Peng; Gaba, Siddharth
- Nature Communications, Vol. 3, Issue 1
Stochasticity Modeling in Memristors
journal, January 2016
- Naous, Rawan; Al-Shedivat, Maruan; Salama, Khaled Nabil
- IEEE Transactions on Nanotechnology, Vol. 15, Issue 1
Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications
journal, January 2015
- Guo, D. Y.; Wu, Z. P.; An, Y. H.
- Applied Physics Letters, Vol. 106, Issue 4
Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
journal, June 2018
- Li, Can; Belkin, Daniel; Li, Yunning
- Nature Communications, Vol. 9, Issue 1
Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition in
journal, January 2013
- Zimmers, A.; Aigouy, L.; Mortier, M.
- Physical Review Letters, Vol. 110, Issue 5
Bipolar resistive switching behavior in Ti/MnO2/Pt structure for nonvolatile memory devices
journal, July 2009
- Yang, Min Kyu; Park, Jae-Wan; Ko, Tae Kuk
- Applied Physics Letters, Vol. 95, Issue 4
Reproducible resistance switching in polycrystalline NiO films
journal, December 2004
- Seo, S.; Lee, M. J.; Seo, D. H.
- Applied Physics Letters, Vol. 85, Issue 23
Random Circuit Breaker Network Model for Unipolar Resistance Switching
journal, March 2008
- Chae, Seung Chul; Lee, Jae Sung; Kim, Sejin
- Advanced Materials, Vol. 20, Issue 6
Effect of electrode material on the resistance switching of Cu2O film
journal, December 2007
- Yang, Woo-Young; Rhee, Shi-Woo
- Applied Physics Letters, Vol. 91, Issue 23
Resistance switching in oxide thin films
journal, July 2008
- Ignatiev, A.; Wu, N. J.; Chen, X.
- Phase Transitions, Vol. 81, Issue 7-8
ReRAM technology; challenges and prospects
journal, January 2012
- Akinaga, Hiro; Shima, Hisashi
- IEICE Electronics Express, Vol. 9, Issue 8
Nanosecond switching in GeTe phase change memory cells
journal, July 2009
- Bruns, G.; Merkelbach, P.; Schlockermann, C.
- Applied Physics Letters, Vol. 95, Issue 4
Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies
journal, June 2012
- Greiner, Mark T.; Chai, Lily; Helander, Michael G.
- Advanced Functional Materials, Vol. 22, Issue 21
Shock Waves and Commutation Speed of Memristors
journal, March 2016
- Tang, Shao; Tesler, Federico; Marlasca, Fernando Gomez
- Physical Review X, Vol. 6, Issue 1
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
journal, December 2011
- Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie
- Thin Solid Films, Vol. 520, Issue 5
Stochastic phase-change neurons
journal, May 2016
- Tuma, Tomas; Pantazi, Angeliki; Le Gallo, Manuel
- Nature Nanotechnology, Vol. 11, Issue 8
Writing to and reading from a nano-scale crossbar memory based on memristors
journal, September 2009
- Vontobel, Pascal O.; Robinett, Warren; Kuekes, Philip J.
- Nanotechnology, Vol. 20, Issue 42
A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing
journal, February 2017
- van de Burgt, Yoeri; Lubberman, Ewout; Fuller, Elliot J.
- Nature Materials, Vol. 16, Issue 4
Colossal Ionic Conductivity at Interfaces of Epitaxial ZrO2:Y2O3/SrTiO3 Heterostructures
journal, August 2008
- Garcia-Barriocanal, J.; Rivera-Calzada, A.; Varela, M.
- Science, Vol. 321, Issue 5889
Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators
journal, May 2013
- Stoliar, Pablo; Cario, Laurent; Janod, Etiene
- Advanced Materials, Vol. 25, Issue 23
SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations
journal, January 2018
- Choi, Shinhyun; Tan, Scott H.; Li, Zefan
- Nature Materials, Vol. 17, Issue 4
Neuromorphic Silicon Neuron Circuits
journal, January 2011
- Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia
- Frontiers in Neuroscience, Vol. 5
Voltage-Triggered Ultrafast Phase Transition in Vanadium Dioxide Switches
journal, February 2013
- Zhou, You; Chen, Xiaonan; Ko, Changhyun
- IEEE Electron Device Letters, Vol. 34, Issue 2
Exploiting Memristors for Compressive Sampling of Sensory Signals
journal, December 2018
- Qian, Fengyu; Gong, Yanping; Huang, Guoxian
- IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 26, Issue 12
Mechanism for bipolar resistive switching in transition-metal oxides
journal, March 2010
- Rozenberg, M. J.; Sánchez, M. J.; Weht, R.
- Physical Review B, Vol. 81, Issue 11
Current switching of resistive states in magnetoresistive manganites
journal, July 1997
- Asamitsu, A.; Tomioka, Y.; Kuwahara, H.
- Nature, Vol. 388, Issue 6637
Neuromorphic electronic systems
journal, January 1990
- Mead, C.
- Proceedings of the IEEE, Vol. 78, Issue 10
A silicon neuron
journal, December 1991
- Mahowald, Misha; Douglas, Rodney
- Nature, Vol. 354, Issue 6354
Electrically Induced Multiple Metal-Insulator Transitions in Oxide Nanodevices
journal, November 2017
- del Valle, Javier; Kalcheim, Yoav; Trastoy, Juan
- Physical Review Applied, Vol. 8, Issue 5
Ultrafast reversible phase change in GeSb films for erasable optical storage
journal, June 1992
- Afonso, C. N.; Solis, J.; Catalina, F.
- Applied Physics Letters, Vol. 60, Issue 25
Nanoionics-based resistive switching memories
journal, November 2007
- Waser, Rainer; Aono, Masakazu
- Nature Materials, Vol. 6, Issue 11, p. 833-840
High switching endurance in TaOx memristive devices
journal, December 2010
- Yang, J. Joshua; Zhang, M. -X.; Strachan, John Paul
- Applied Physics Letters, Vol. 97, Issue 23
High Speed Overwritable Phase Change Optical Disk Material
journal, January 1987
- Yamada, Noboru; Ohno, Eiji; Akahira, Nobuo
- Japanese Journal of Applied Physics, Vol. 26, Issue S4
A scalable neuristor built with Mott memristors
journal, December 2012
- Pickett, Matthew D.; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley
- Nature Materials, Vol. 12, Issue 2
Electrically tailored resistance switching in silicon oxide
journal, October 2012
- Mehonic, Adnan; Cueff, Sébastien; Wojdak, Maciej
- Nanotechnology, Vol. 23, Issue 45, Article No. 455201
Resistance switching properties of molybdenum oxide films
journal, May 2012
- Arita, M.; Kaji, H.; Fujii, T.
- Thin Solid Films, Vol. 520, Issue 14
Nonthermal and purely electronic resistive switching in a Mott memory
journal, July 2014
- Stoliar, P.; Rozenberg, M.; Janod, E.
- Physical Review B, Vol. 90, Issue 4
Quantitative Mapping of Phase Coexistence in Mott-Peierls Insulator during Electronic and Thermally Driven Phase Transition
journal, January 2015
- Madan, Himanshu; Jerry, Matthew; Pogrebnyakov, Alexej
- ACS Nano, Vol. 9, Issue 2
Fully memristive neural networks for pattern classification with unsupervised learning
journal, February 2018
- Wang, Zhongrui; Joshi, Saumil; Savel’ev, Sergey
- Nature Electronics, Vol. 1, Issue 2
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
journal, March 2006
- Szot, Krzysztof; Speier, Wolfgang; Bihlmayer, Gustav
- Nature Materials, Vol. 5, Issue 4
Understanding electroforming in bipolar resistive switching oxides
journal, January 2011
- Gomez-Marlasca, F.; Ghenzi, N.; Rozenberg, M. J.
- Applied Physics Letters, Vol. 98, Issue 4
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
journal, December 2010
- Goux, L.; Czarnecki, P.; Chen, Y. Y.
- Applied Physics Letters, Vol. 97, Issue 24
Criticality in the Brain: Evidence and Implications for Neuromorphic Computing
journal, March 2018
- Trastoy, J.; Schuller, Ivan K.
- ACS Chemical Neuroscience, Vol. 9, Issue 6
Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
journal, October 2005
- Dongsoo Lee,
- IEEE Electron Device Letters, Vol. 26, Issue 10
Reproducible switching effect in thin oxide films for memory applications
journal, July 2000
- Beck, A.; Bednorz, J. G.; Gerber, Ch.
- Applied Physics Letters, Vol. 77, Issue 1
Nonequilibrium dynamical mean-field theory and its applications
journal, June 2014
- Aoki, Hideo; Tsuji, Naoto; Eckstein, Martin
- Reviews of Modern Physics, Vol. 86, Issue 2
Selection of Optimized Materials for CBRAM Based on HT-XRD and Electrical Test Results
journal, January 2009
- Bruchhaus, Rainer; Honal, Matthias; Symanczyk, Ralf
- Journal of The Electrochemical Society, Vol. 156, Issue 9
Evidence for an Oxygen Diffusion Model for the Electric Pulse Induced Resistance Change Effect in Transition-Metal Oxides
journal, April 2007
- Nian, Y. B.; Strozier, J.; Wu, N. J.
- Physical Review Letters, Vol. 98, Issue 14
Electric-pulse-induced reversible resistance change effect in magnetoresistive films
journal, May 2000
- Liu, S. Q.; Wu, N. J.; Ignatiev, A.
- Applied Physics Letters, Vol. 76, Issue 19
The Neuristor
journal, September 1960
- Crane, H. D.
- IEEE Transactions on Electronic Computers, Vol. EC-9, Issue 3
Threshold switching and electrical self-oscillation in niobium oxide films
journal, September 2016
- Liu, Xinjun; Li, Shuai; Nandi, Sanjoy Kumar
- Journal of Applied Physics, Vol. 120, Issue 12
Completely Erasable Phase Change Optical Disk
journal, February 1992
- Iwasaki, Hiroko; Ide, Yukio; Harigaya, Makoto
- Japanese Journal of Applied Physics, Vol. 31, Issue Part 1, No. 2B
Avalanches in vanadium sesquioxide nanodevices
journal, August 2015
- Wang, Siming; Ramírez, Juan Gabriel; Schuller, Ivan K.
- Physical Review B, Vol. 92, Issue 8
Memory effects in complex materials and nanoscale systems
journal, April 2011
- Pershin, Yuriy V.; Di Ventra, Massimiliano
- Advances in Physics, Vol. 60, Issue 2
Resolving the controversy: Mott mechanism dominates the insulator-to-metal transition
journal, January 2017
- Nájera, O.; Civelli, M.; Dobrosavljević, V.
- Physical Review B, Vol. 95, Issue 3
Adaptive oxide electronics: A review
journal, October 2011
- Ha, Sieu D.; Ramanathan, Shriram
- Journal of Applied Physics, Vol. 110, Issue 7
Metal–Oxide RRAM
journal, June 2012
- Wong, H.-S. Philip; Lee, Heng-Yuan; Yu, Shimeng
- Proceedings of the IEEE, Vol. 100, Issue 6, p. 1951-1970
Unipolar resistive switching behaviors in amorphous lutetium oxide films
journal, October 2010
- Gao, Xu; Xia, Yidong; Xu, Bo
- Journal of Applied Physics, Vol. 108, Issue 7
Ultralow power artificial synapses using nanotextured magnetic Josephson junctions
journal, January 2018
- Schneider, Michael L.; Donnelly, Christine A.; Russek, Stephen E.
- Science Advances, Vol. 4, Issue 1
First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System
journal, August 2014
- Camjayi, A.; Acha, C.; Weht, R.
- Physical Review Letters, Vol. 113, Issue 8
On the stochastic nature of resistive switching in Cu doped Ge 0.3 Se 0.7 based memory devices
journal, September 2011
- Soni, R.; Meuffels, P.; Staikov, G.
- Journal of Applied Physics, Vol. 110, Issue 5
Electronic Switching Effect and Phase-Change Transition in Chalcogenide Materials
journal, October 2004
- Redaelli, A.; Pirovano, A.; Pellizzer, F.
- IEEE Electron Device Letters, Vol. 25, Issue 10
Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
journal, June 2008
- Xu, Nuo; Liu, Lifeng; Sun, Xiao
- Applied Physics Letters, Vol. 92, Issue 23
Direct evidence on Ta-Metal Phases Igniting Resistive Switching in TaOx Thin Film
journal, September 2015
- Kyu Yang, Min; Ju, Hyunsu; Hwan Kim, Gun
- Scientific Reports, Vol. 5, Issue 1
Data Clustering using Memristor Networks
journal, May 2015
- Choi, Shinhyun; Sheridan, Patrick; Lu, Wei D.
- Scientific Reports, Vol. 5, Issue 1
A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator
journal, January 2017
- Stoliar, Pablo; Tranchant, Julien; Corraze, Benoit
- Advanced Functional Materials, Vol. 27, Issue 11
Mechanism of Electric-Pulse-Induced Resistance Switching in Manganites
journal, March 2007
- Quintero, M.; Levy, P.; Leyva, A. G.
- Physical Review Letters, Vol. 98, Issue 11
CMOS compatible electrode materials selection in oxide-based memory devices
journal, July 2016
- Zhuo, V. Y. -Q.; Li, M.; Guo, Y.
- Journal of Applied Physics, Vol. 120, Issue 2
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010
- Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck
- Nature Nanotechnology, Vol. 5, Issue 2
Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
journal, October 2009
- Cao, Xun; Li, Xiaomin; Gao, Xiangdong
- Journal of Applied Physics, Vol. 106, Issue 7
Effect of disorder on the metal-insulator transition of vanadium oxides: Local versus global effects
journal, May 2015
- Ramirez, Juan Gabriel; Saerbeck, Thomas; Wang, Siming
- Physical Review B, Vol. 91, Issue 20
Subnanosecond incubation times for electric-field-induced metallization of a correlated electron oxide
journal, April 2014
- Brockman, Justin S.; Gao, Li; Hughes, Brian
- Nature Nanotechnology, Vol. 9, Issue 6
Phase-change materials for non-volatile photonic applications
journal, August 2017
- Wuttig, M.; Bhaskaran, H.; Taubner, T.
- Nature Photonics, Vol. 11, Issue 8
Superconducting Optoelectronic Circuits for Neuromorphic Computing
journal, March 2017
- Shainline, Jeffrey M.; Buckley, Sonia M.; Mirin, Richard P.
- Physical Review Applied, Vol. 7, Issue 3
Multiple Avalanches across the Metal-Insulator Transition of Vanadium Oxide Nanoscaled Junctions
journal, July 2008
- Sharoni, Amos; Ramírez, Juan Gabriel; Schuller, Ivan K.
- Physical Review Letters, Vol. 101, Issue 2
Two centuries of memristors
journal, May 2012
- Prodromakis, Themistoklis; Toumazou, Christofer; Chua, Leon
- Nature Materials, Vol. 11, Issue 6
Phase Change Materials and Their Application to Nonvolatile Memories
journal, August 2009
- Raoux, Simone; Wełnic, Wojciech; Ielmini, Daniele
- Chemical Reviews, Vol. 110, Issue 1
Unipolar Switching Behaviors of RTO $\hbox{WO}_{X}$ RRAM
journal, February 2010
- Chien, W. C.; Chen, Y. C.; Lai, E. K.
- IEEE Electron Device Letters, Vol. 31, Issue 2
Conductive bridging random access memory—materials, devices and applications
journal, October 2016
- Kozicki, Michael N.; Barnaby, Hugh J.
- Semiconductor Science and Technology, Vol. 31, Issue 11
Phase-change materials for rewriteable data storage
journal, November 2007
- Wuttig, Matthias; Yamada, Noboru
- Nature Materials, Vol. 6, Issue 11
Nonvolatile Memory with Multilevel Switching: A Basic Model
journal, April 2004
- Rozenberg, M. J.; Inoue, I. H.; Sánchez, M. J.
- Physical Review Letters, Vol. 92, Issue 17
Analogue signal and image processing with large memristor crossbars
journal, December 2017
- Li, Can; Hu, Miao; Li, Yunning
- Nature Electronics, Vol. 1, Issue 1
Electrochemical metallization cells—blending nanoionics into nanoelectronics?
journal, February 2012
- Lu, Wei; Jeong, Doo Seok; Kozicki, Michael
- MRS Bulletin, Vol. 37, Issue 2
Interfacial phase-change memory
journal, July 2011
- Simpson, R. E.; Fons, P.; Kolobov, A. V.
- Nature Nanotechnology, Vol. 6, Issue 8
Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits
journal, June 2018
- Bayat, F. Merrikh; Prezioso, M.; Chakrabarti, B.
- Nature Communications, Vol. 9, Issue 1
Resistance switching in the metal deficient-type oxides: NiO and CoO
journal, July 2007
- Shima, Hisashi; Takano, Fumiyoshi; Akinaga, Hiro
- Applied Physics Letters, Vol. 91, Issue 1
Real-Time In Situ HRTEM-Resolved Resistance Switching of Ag 2 S Nanoscale Ionic Conductor
journal, March 2010
- Xu, Zhi; Bando, Yoshio; Wang, Wenlong
- ACS Nano, Vol. 4, Issue 5
Tuning the resistive switching properties of TiO 2− x films
journal, March 2015
- Ghenzi, N.; Rozenberg, M. J.; Llopis, R.
- Applied Physics Letters, Vol. 106, Issue 12
Nanosecond threshold switching of GeTe 6 cells and their potential as selector devices
journal, April 2012
- Anbarasu, M.; Wimmer, Martin; Bruns, Gunnar
- Applied Physics Letters, Vol. 100, Issue 14
Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors
journal, June 2017
- Li, Can; Han, Lili; Jiang, Hao
- Nature Communications, Vol. 8, Issue 1
Retrospective: Mauchly on the trials of building ENIAC: People could not see how something with 18 000 tubes and costing $500 000 could ever become practical!
journal, January 1975
- Mauchly, John W.
- IEEE Spectrum, Vol. 12, Issue 4
Reservoir computing using dynamic memristors for temporal information processing
journal, December 2017
- Du, Chao; Cai, Fuxi; Zidan, Mohammed A.
- Nature Communications, Vol. 8, Issue 1
First demonstration of “Leaky Integrate and Fire” artificial neuron behavior on (V0.95Cr0.05)2O3 thin film
journal, May 2018
- Adda, Coline; Cario, Laurent; Tranchant, Julien
- MRS Communications, Vol. 8, Issue 03
Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device
journal, May 2010
- Huang, Hsin-Hung; Shih, Wen-Chieh; Lai, Chih-Huang
- Applied Physics Letters, Vol. 96, Issue 19
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
journal, April 2010
- Jo, Sung Hyun; Chang, Ting; Ebong, Idongesit
- Nano Letters, Vol. 10, Issue 4, p. 1297-1301
State Dynamics and Modeling of Tantalum Oxide Memristors
journal, July 2013
- Strachan, John Paul; Torrezan, Antonio C.; Miao, Feng
- IEEE Transactions on Electron Devices, Vol. 60, Issue 7
Manganite-based memristive heterojunction with tunable non-linear I–V characteristics
journal, January 2015
- Lee, Hong-Sub; Park, Hyung-Ho; Rozenberg, M. J.
- Nanoscale, Vol. 7, Issue 15
Coexistence of bipolar and unipolar resistive switching characteristics of thin TiO2 film grown on Cu foil substrate for flexible nonvolatile memory device
journal, February 2017
- Wang, Hongjun; Zhu, Yuanyuan; Fu, Dejun
- Journal of Alloys and Compounds, Vol. 695
Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
journal, September 2015
- Wedig, Anja; Luebben, Michael; Cho, Deok-Yong
- Nature Nanotechnology, Vol. 11, Issue 1
Dynamical Singlets and Correlation-Assisted Peierls Transition in
journal, January 2005
- Biermann, S.; Poteryaev, A.; Lichtenstein, A. I.
- Physical Review Letters, Vol. 94, Issue 2
A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
journal, December 2011
- Kim, Kuk-Hwan; Gaba, Siddharth; Wheeler, Dana
- Nano Letters, Vol. 12, Issue 1
Resistive Switching in Mott Insulators and Correlated Systems
journal, July 2015
- Janod, Etienne; Tranchant, Julien; Corraze, Benoit
- Advanced Functional Materials, Vol. 25, Issue 40
In-memory computing with resistive switching devices
journal, June 2018
- Ielmini, Daniele; Wong, H. -S. Philip
- Nature Electronics, Vol. 1, Issue 6
Silicon Oxide (SiO x ): A Promising Material for Resistance Switching?
journal, June 2018
- Mehonic, Adnan; Shluger, Alexander L.; Gao, David
- Advanced Materials, Vol. 30, Issue 43
Dielectric breakdown of one-dimensional Mott insulators and
journal, September 2000
- Taguchi, Y.; Matsumoto, T.; Tokura, Y.
- Physical Review B, Vol. 62, Issue 11
Memristive devices for computing
journal, January 2013
- Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
- Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: Homogeneous/inhomogeneous transition of current distribution
journal, January 2008
- Inoue, I. H.; Yasuda, S.; Akinaga, H.
- Physical Review B, Vol. 77, Issue 3
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
journal, June 2011
- Ohno, Takeo; Hasegawa, Tsuyoshi; Tsuruoka, Tohru
- Nature Materials, Vol. 10, Issue 8
Bipolar resistive switching of chromium oxide for resistive random access memory
journal, August 2011
- Chen, Shih-Cheng; Chang, Ting-Chang; Chen, Shih-Yang
- Solid-State Electronics, Vol. 62, Issue 1
Electrical properties and colossal electroresistance of heteroepitaxial Schottky junctions
journal, April 2007
- Fujii, T.; Kawasaki, M.; Sawa, A.
- Physical Review B, Vol. 75, Issue 16
Non-volatile resistive switching in the dielectric superconductor YBa 2 Cu 3 O 7−δ
journal, December 2008
- Acha, C.; Rozenberg, M. J.
- Journal of Physics: Condensed Matter, Vol. 21, Issue 4
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
journal, August 2005
- Choi, B. J.; Jeong, D. S.; Kim, S. K.
- Journal of Applied Physics, Vol. 98, Issue 3
Memristive switching mechanism for metal/oxide/metal nanodevices
journal, June 2008
- Yang, J. Joshua; Pickett, Matthew D.; Li, Xuema
- Nature Nanotechnology, Vol. 3, Issue 7
Sparse coding with memristor networks
journal, May 2017
- Sheridan, Patrick M.; Cai, Fuxi; Du, Chao
- Nature Nanotechnology, Vol. 12, Issue 8
Ultrasensitive Memristive Synapses Based on Lightly Oxidized Sulfide Films
journal, April 2017
- Hu, Lingxiang; Fu, Sheng; Chen, Youhu
- Advanced Materials, Vol. 29, Issue 24
The missing memristor found
journal, May 2008
- Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.
- Nature, Vol. 453, Issue 7191
Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application
journal, April 2009
- Xiao Sun,
- IEEE Electron Device Letters, Vol. 30, Issue 4
Physics of Semiconductor Devices. S. M. Sze. Interscience (Wiley), New York, 1969. xvi + 814 pp., illus. $19.95
journal, November 1969
- Glicksman, M.
- Science, Vol. 166, Issue 3909
TiO 2 —a prototypical memristive material
journal, May 2011
- Szot, K.; Rogala, M.; Speier, W.
- Nanotechnology, Vol. 22, Issue 25
Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices
journal, August 2008
- Fujiwara, Kohei; Nemoto, Takumi; Rozenberg, Marcelo J.
- Japanese Journal of Applied Physics, Vol. 47, Issue 8
Electrochemical metallization memories—fundamentals, applications, prospects
journal, May 2011
- Valov, Ilia; Waser, Rainer; Jameson, John R.
- Nanotechnology, Vol. 22, Issue 25
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
journal, May 2015
- Prezioso, M.; Merrikh-Bayat, F.; Hoskins, B. D.
- Nature, Vol. 521, Issue 7550
Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
journal, August 2017
- Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley
- Nature, Vol. 548, Issue 7667
Resistive switching characteristics in hafnium oxide, tantalum oxide and bilayer devices
journal, June 2016
- Park, Mi Ra; Abbas, Yawar; Abbas, Haider
- Microelectronic Engineering, Vol. 159
Understanding the resistive switching characteristics and mechanism in active SiO x -based resistive switching memory
journal, December 2012
- Chang, Yao-Feng; Chen, Pai-Yu; Fowler, Burt
- Journal of Applied Physics, Vol. 112, Issue 12
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
journal, June 2014
- Yang, Yuchao; Gao, Peng; Li, Linze
- Nature Communications, Vol. 5, Article No. 4232
Nanofilament Formation and Regeneration During Cu/Al 2 O 3 Resistive Memory Switching
journal, May 2015
- Hubbard, William A.; Kerelsky, Alexander; Jasmin, Grant
- Nano Letters, Vol. 15, Issue 6
Electroforming and resistance-switching mechanism in a magnetite thin film
journal, September 2007
- Odagawa, A.; Katoh, Y.; Kanzawa, Y.
- Applied Physics Letters, Vol. 91, Issue 13
Metal-Insulator Transitions in Pure and Doped
journal, March 1973
- McWhan, D. B.; Menth, A.; Remeika, J. P.
- Physical Review B, Vol. 7, Issue 5
On Computable Numbers, with an Application to the Entscheidungsproblem
journal, January 1937
- Turing, A. M.
- Proceedings of the London Mathematical Society, Vol. s2-42, Issue 1
Improvement of SET variability in TaO x based resistive RAM devices
journal, October 2017
- Schönhals, Alexander; Waser, Rainer; Wouters, Dirk J.
- Nanotechnology, Vol. 28, Issue 46
Resistive switching in transition metal oxides
journal, June 2008
- Sawa, Akihito
- Materials Today, Vol. 11, Issue 6
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009
- Waser, Rainer; Dittmann, Regina; Staikov, Georgi
- Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing
journal, September 2016
- Wang, Zhongrui; Joshi, Saumil; Savel’ev, Sergey E.
- Nature Materials, Vol. 16, Issue 1
Resistance switching in polycrystalline BiFeO3 thin films
journal, July 2010
- Yin, Kuibo; Li, Mi; Liu, Yiwei
- Applied Physics Letters, Vol. 97, Issue 4
Dynamical mean-field theory of strongly correlated fermion systems and the limit of infinite dimensions
journal, January 1996
- Georges, Antoine; Kotliar, Gabriel; Krauth, Werner
- Reviews of Modern Physics, Vol. 68, Issue 1
Enhanced metal–insulator transition in V2O3 by thermal quenching after growth
journal, March 2018
- Trastoy, J.; Kalcheim, Y.; del Valle, J.
- Journal of Materials Science, Vol. 53, Issue 12
Phase Change Memory
journal, December 2010
- Wong, H. -S. Philip; Raoux, Simone; Kim, SangBum
- Proceedings of the IEEE, Vol. 98, Issue 12
Analysis of the row grounding technique in a memristor-based crossbar array: ROW GROUNDING TECHNIQUE ANALYSIS IN A MEMRISTOR-BASED CROSSBAR ARRAY
journal, November 2017
- Dozortsev, Alexander; Goldshtein, Israel; Kvatinsky, Shahar
- International Journal of Circuit Theory and Applications, Vol. 46, Issue 1
Spike-timing dependent plasticity
journal, January 2010
- Sjöström, Jesper; Gerstner, Wulfram
- Scholarpedia, Vol. 5, Issue 2
Quantum-size effects in hafnium-oxide resistive switching
journal, May 2013
- Long, Shibing; Lian, Xiaojuan; Cagli, Carlo
- Applied Physics Letters, Vol. 102, Issue 18
Equivalent-accuracy accelerated neural-network training using analogue memory
journal, June 2018
- Ambrogio, Stefano; Narayanan, Pritish; Tsai, Hsinyu
- Nature, Vol. 558, Issue 7708
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor
journal, June 2016
- Jiang, Hao; Han, Lili; Lin, Peng
- Scientific Reports, Vol. 6, Issue 1
Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5
journal, June 2005
- Sim, Hyunjun; Choi, Dooho; Lee, Dongsoo
- Microelectronic Engineering, Vol. 80
Direct resistance profile for an electrical pulse induced resistance change device
journal, December 2005
- Chen, X.; Wu, N. J.; Strozier, J.
- Applied Physics Letters, Vol. 87, Issue 23
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
journal, May 2016
- Ielmini, Daniele
- Semiconductor Science and Technology, Vol. 31, Issue 6
Resistive Switches and Memories from Silicon Oxide
journal, October 2010
- Yao, Jun; Sun, Zhengzong; Zhong, Lin
- Nano Letters, Vol. 10, Issue 10
Progress in digital integrated electronics [Technical literaiture, Copyright 1975 IEEE. Reprinted, with permission. Technical Digest. International Electron Devices Meeting, IEEE, 1975, pp. 11-13.]
journal, September 2006
- Moore, Gordon E.
- IEEE Solid-State Circuits Society Newsletter, Vol. 11, Issue 3
Neuromorphic silicon neuron circuits
text, January 2011
- Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara J.
- ETH Zurich
Random Circuit Breaker Network Model for Unipolar Resistance Switching
journal, June 2008
- Chae, Seung Chul; Lee, Jae Sung; Kim, Sejin
- Advanced Materials, Vol. 20, Issue 12
Neuromorphic Silicon Neuron Circuits
text, January 2011
- Boahen, K.; Wang, Y.; Wijekoon, J.
- Frontiers Research Foundation
Electrochemical metallization memories—fundamentals, applications, prospects
journal, June 2011
- Valov, Ilia; Waser, Rainer; Jameson, John R.
- Nanotechnology, Vol. 22, Issue 28
Memory effects in complex materials and nanoscale systems
text, January 2010
- Pershin, Yuriy V.; Di Ventra, Massimiliano
- arXiv
Training and Operation of an Integrated Neuromorphic Network Based on Metal-Oxide Memristors
text, January 2014
- Prezioso, Mirko; Merrikh-Bayat, Farnood; Hoskins, Brian
- arXiv
Works referencing / citing this record:
Functional Oxides for Photoneuromorphic Engineering: Toward a Solar Brain
journal, June 2019
- Pérez‐Tomás, Amador
- Advanced Materials Interfaces, Vol. 6, Issue 15
Bismuth triiodide complexes: structure, spectroscopy, electronic properties, and memristive properties
journal, January 2020
- Wlaźlak, Ewelina; Kalinowska-Tłuścik, Justyna; Przyczyna, Dawid
- Journal of Materials Chemistry C, Vol. 8, Issue 18
Simple design of memristive counters and their applications in automatic irrigation system
journal, January 2020
- Raj, P. Michael Preetam; Louis, V. Jeffry; Viswakumar, Aditya
- IET Circuits, Devices & Systems, Vol. 14, Issue 1
Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights
journal, October 2019
- Emelyanov, A. V.; Nikiruy, K. E.; Serenko, A. V.
- Nanotechnology, Vol. 31, Issue 4
Reconstructing Nonequilibrium Regimes of Quantum Many-Body Systems from the Analytical Structure of Perturbative Expansions
journal, October 2019
- Bertrand, Corentin; Florens, Serge; Parcollet, Olivier
- Physical Review X, Vol. 9, Issue 4
An ultra-compact leaky-integrate-and-fire model for building spiking neural networks
journal, July 2019
- Rozenberg, M. J.; Schneegans, O.; Stoliar, P.
- Scientific Reports, Vol. 9, Issue 1
Search for power-efficient wide-range reversible resistance modulation of VO 2 single crystals
journal, July 2019
- Fisher, Bertina; Patlagan, Larisa; Kornblum, Lior
- Journal of Physics D: Applied Physics, Vol. 52, Issue 38
Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications
journal, July 2019
- Minnekhanov, Anton A.; Emelyanov, Andrey V.; Lapkin, Dmitry A.
- Scientific Reports, Vol. 9, Issue 1
Robust Coupling between Structural and Electronic Transitions in a Mott Material
journal, February 2019
- Kalcheim, Yoav; Butakov, Nikita; Vargas, Nicolas M.
- Physical Review Letters, Vol. 122, Issue 5
Dopamine-like STDP modulation in nanocomposite memristors
journal, June 2019
- Nikiruy, K. E.; Emelyanov, A. V.; Demin, V. A.
- AIP Advances, Vol. 9, Issue 6
Bipolar resistive switching characteristics of amorphous SrTiO 3 thin films prepared by the sol-gel process
journal, June 2019
- Tang, Hui; Tang, Xin-Gui; Jiang, Yan-Ping
- Journal of Asian Ceramic Societies, Vol. 7, Issue 3
Search for power-efficient wide-range reversible resistance modulation of $VO_2$ single crystals
text, January 2018
- Fisher, Bertina; Patlagan, Larisa; Kornblum, Lior
- arXiv
Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications
text, January 2019
- Minnekhanov, Anton A.; Emelyanov, Andrey V.; Lapkin, Dmitry A.
- arXiv
An ultra-compact leaky-integrate-and-fire model for building spiking neural networks
journal, July 2019
- Rozenberg, M. J.; Schneegans, O.; Stoliar, P.
- Scientific Reports, Vol. 9, Issue 1
A caloritronics-based Mott neuristor
journal, March 2020
- del Valle, Javier; Salev, Pavel; Kalcheim, Yoav
- Scientific Reports, Vol. 10, Issue 1
Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications
text, January 2019
- Minnekhanov, Anton A.; Emelyanov, Andrey V.; Lapkin, Dmitry A.
- arXiv