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Title: Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures

Abstract

Here, the electron density and physical stress at the thermally oxidized SiC/SiO2 interface, and their change with nitrogen incorporation, were observed using x-ray reflectivity, Raman scattering, and a novel stress determination technique. There is no evidence for residual carbon species at the SiO2/SiC. Instead, a ~1 nm thick low electron density layer is formed at this interface, consistent with interfacial suboxides (SiOx, 0.3 < x < 2), along with high interfacial stress. Nitrogen passivation, a known process to improve the interface state density and electronic properties, eliminates the low density component and simultaneously releases the interface stress. On the basis of these findings, a new chemical interaction model is proposed to explain the effect of the nitrogen, and a guideline, stress managing together with elemental control of the dielectric/SiC interface, is suggested to achieve high quality gate stack on SiC.

Authors:
 [1];  [2];  [3];  [3];  [2];  [2];  [3];  [3];  [3];  [2];  [3]
  1. Shanghai Jiao Tong Univ., Shanghai (People'e Republic of China); Rutgers Univ., Piscataway, NJ (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
  3. Rutgers Univ., Piscataway, NJ (United States)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Chemical Sciences, Geosciences & Biosciences Division
OSTI Identifier:
1481859
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SiO2; nitrogen passivation; wide band gap device

Citation Formats

Li, Xiuyan, Lee, Sang Soo, Li, Mengjun, Ermakov, Alexei, Medina-Ramos, Jonnathan, Fister, Timothy T., Amarasinghe, Voshadhi, Gustafsson, Torgny, Garfunkel, Eric, Fenter, Paul, and Feldman, Leonard C. Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures. United States: N. p., 2018. Web. doi:10.1063/1.5048220.
Li, Xiuyan, Lee, Sang Soo, Li, Mengjun, Ermakov, Alexei, Medina-Ramos, Jonnathan, Fister, Timothy T., Amarasinghe, Voshadhi, Gustafsson, Torgny, Garfunkel, Eric, Fenter, Paul, & Feldman, Leonard C. Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures. United States. doi:10.1063/1.5048220.
Li, Xiuyan, Lee, Sang Soo, Li, Mengjun, Ermakov, Alexei, Medina-Ramos, Jonnathan, Fister, Timothy T., Amarasinghe, Voshadhi, Gustafsson, Torgny, Garfunkel, Eric, Fenter, Paul, and Feldman, Leonard C. Mon . "Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures". United States. doi:10.1063/1.5048220. https://www.osti.gov/servlets/purl/1481859.
@article{osti_1481859,
title = {Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures},
author = {Li, Xiuyan and Lee, Sang Soo and Li, Mengjun and Ermakov, Alexei and Medina-Ramos, Jonnathan and Fister, Timothy T. and Amarasinghe, Voshadhi and Gustafsson, Torgny and Garfunkel, Eric and Fenter, Paul and Feldman, Leonard C.},
abstractNote = {Here, the electron density and physical stress at the thermally oxidized SiC/SiO2 interface, and their change with nitrogen incorporation, were observed using x-ray reflectivity, Raman scattering, and a novel stress determination technique. There is no evidence for residual carbon species at the SiO2/SiC. Instead, a ~1 nm thick low electron density layer is formed at this interface, consistent with interfacial suboxides (SiOx, 0.3 < x < 2), along with high interfacial stress. Nitrogen passivation, a known process to improve the interface state density and electronic properties, eliminates the low density component and simultaneously releases the interface stress. On the basis of these findings, a new chemical interaction model is proposed to explain the effect of the nitrogen, and a guideline, stress managing together with elemental control of the dielectric/SiC interface, is suggested to achieve high quality gate stack on SiC.},
doi = {10.1063/1.5048220},
journal = {Applied Physics Letters},
number = 13,
volume = 113,
place = {United States},
year = {2018},
month = {9}
}

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