Fast Deposition of Aligning Edge‐On Polymers for High‐Mobility Ambipolar Transistors
Abstract
Abstract Fast deposition of aligning ambipolar polymers for high‐performance organic field‐effect transistors (OFETs) and inverter circuits are highly desired for both scientific studies and industry applications. Here, large‐area and ordered polymer films are prepared by a bar‐coating method at a rate of 120 mm s −1 in air. Atomic force microscopy and grazing‐incidence wide‐angle X‐ray scattering analysis indicate uniform edge‐on poly(fluoroisoindigo‐difluorobithiophene‐fluoroisoindigo‐bithiophene) (PFIBI‐BT) in 11.7 ± 1 nm film (≈5 layers). The elongated, uniformly oriented grains can reduce the adverse effects of the grain boundaries and facilitate charge transport in polymers. Furthermore, OFETs based on parallel film show high hole/electron mobilities up to 5.5/4.5 cm 2 V −1 s −1 , which are approximately nine times of the devices prepared by spin‐coating. The gain of the inverter is as high as 174, which is one of the highest values in polymer inventers currently. These results demonstrate that the excellent bipolar performance of few‐layer PFIBI‐BT can be ensured while achieving the compatibility of the experimental process with industrial preparation.
- Authors:
-
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China, School of Chemistry and Chemical Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications School of Material Science &, Engineering Beijing Institute of Technology Beijing 100081 P. R. China
- DSM DMSC R&,D Solutions P.O. Box 18 6160 MD Geleen The Netherlands
- Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100190 P. R. China
- Tianjin Key Laboratory of Molecular Optoelectronic Science Department of Chemistry School of Science Tianjin University Tianjin 300072 P. R. China
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1481799
- Grant/Contract Number:
- DE‐AC02‐06CH11357
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Advanced Materials
- Additional Journal Information:
- Journal Name: Advanced Materials Journal Volume: 31 Journal Issue: 2; Journal ID: ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)
- Country of Publication:
- Germany
- Language:
- English
Citation Formats
Jiang, Yingying, Chen, Jinyang, Sun, Yunlong, Li, Qingyuan, Cai, Zhengxu, Li, Junyu, Guo, Yunlong, Hu, Wenping, and Liu, Yunqi. Fast Deposition of Aligning Edge‐On Polymers for High‐Mobility Ambipolar Transistors. Germany: N. p., 2018.
Web. doi:10.1002/adma.201805761.
Jiang, Yingying, Chen, Jinyang, Sun, Yunlong, Li, Qingyuan, Cai, Zhengxu, Li, Junyu, Guo, Yunlong, Hu, Wenping, & Liu, Yunqi. Fast Deposition of Aligning Edge‐On Polymers for High‐Mobility Ambipolar Transistors. Germany. https://doi.org/10.1002/adma.201805761
Jiang, Yingying, Chen, Jinyang, Sun, Yunlong, Li, Qingyuan, Cai, Zhengxu, Li, Junyu, Guo, Yunlong, Hu, Wenping, and Liu, Yunqi. Mon .
"Fast Deposition of Aligning Edge‐On Polymers for High‐Mobility Ambipolar Transistors". Germany. https://doi.org/10.1002/adma.201805761.
@article{osti_1481799,
title = {Fast Deposition of Aligning Edge‐On Polymers for High‐Mobility Ambipolar Transistors},
author = {Jiang, Yingying and Chen, Jinyang and Sun, Yunlong and Li, Qingyuan and Cai, Zhengxu and Li, Junyu and Guo, Yunlong and Hu, Wenping and Liu, Yunqi},
abstractNote = {Abstract Fast deposition of aligning ambipolar polymers for high‐performance organic field‐effect transistors (OFETs) and inverter circuits are highly desired for both scientific studies and industry applications. Here, large‐area and ordered polymer films are prepared by a bar‐coating method at a rate of 120 mm s −1 in air. Atomic force microscopy and grazing‐incidence wide‐angle X‐ray scattering analysis indicate uniform edge‐on poly(fluoroisoindigo‐difluorobithiophene‐fluoroisoindigo‐bithiophene) (PFIBI‐BT) in 11.7 ± 1 nm film (≈5 layers). The elongated, uniformly oriented grains can reduce the adverse effects of the grain boundaries and facilitate charge transport in polymers. Furthermore, OFETs based on parallel film show high hole/electron mobilities up to 5.5/4.5 cm 2 V −1 s −1 , which are approximately nine times of the devices prepared by spin‐coating. The gain of the inverter is as high as 174, which is one of the highest values in polymer inventers currently. These results demonstrate that the excellent bipolar performance of few‐layer PFIBI‐BT can be ensured while achieving the compatibility of the experimental process with industrial preparation.},
doi = {10.1002/adma.201805761},
journal = {Advanced Materials},
number = 2,
volume = 31,
place = {Germany},
year = {Mon Nov 12 00:00:00 EST 2018},
month = {Mon Nov 12 00:00:00 EST 2018}
}
https://doi.org/10.1002/adma.201805761
Web of Science
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