Probing Plasticity and Strain-Rate Effects of Indium Submicron Pillars Using Synchrotron Laue X-ray Microdiffraction

Journal Article · 27 September 2018 · IEEE Transactions on Device and Materials Reliability

DOI: https://doi.org/10.1109/TDMR.2018.2872562 · OSTI ID:1481759

Ali, Hashina Parveen Anwar ^[1]; Tamura, Nobumichi ^[2]; Budiman, Arief Suriadi ^[1]

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1. Singapore University of Technology and Design (SUTD) (Singapore). Xtreme Materials Lab (XML)
2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)

We present that mechanical behaviors and especially the strain-rate responses at the nanoscales of low melting temperature metals, such as indium have not been much studied. Indium is one of the key materials or alloy-components in advanced microelectronics and nanotechnology industry, and understanding their mechanical behaviors at nanoscales becomes increasingly important to ensure lifetime reliability of their applications in novel nanoscale devices or advanced systems (for packaging at the nanoscales, for instance). Synchrotron X-ray microdiffraction has been utilized to examine defect structures of nanoscale materials as well as their strain-rate responses. Nanoscale or advanced microelectronics packaging, for instance, require acceptable levels of drop test results. For these low melting temperature materials especially, this technique offers a unique advantage as conventional methods such as TEM and EBSD will expose the structure to high energy electron beams that may significantly alter the microstructure and defect structure during analysis. Using this approach, we found interesting differences in term of X-ray peak broadening after deformation with different strain rates, which could indicate differences in plasticity mechanisms in the submicron pillars of indium, which could be important for its applications in nanodevices. Finally, understanding these differences could lead to better control of mechanical properties of low melting temperature metals at the nanoscales and thus have important implications for nanodevice reliability.

• Research Organization: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
• Grant/Contract Number: AC02-05CH11231
• OSTI ID: 1481759
• Journal Information: IEEE Transactions on Device and Materials Reliability, Journal Name: IEEE Transactions on Device and Materials Reliability Journal Issue: 4 Vol. 18; ISSN 1530-4388
• Publisher: IEEECopyright Statement
• Country of Publication: United States
• Language: English