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Title: Coherent growth of oxide films on a cleaved layered metal oxide substrate

Abstract

Understanding oxide interface-induced effects requires controlled epitaxial growth of films on well-defined substrate surfaces. While conventional film growth on ex situ prepared substrates has proven to be a successful route, the choices of appropriate substrates with atomically defined surfaces are limited. Here, by depositing La2/3 Sr1/3 Mn O3 on Sr2 Ru O4 (001), we present an alternative method of growing oxide thin films on in situ cleaved surfaces of layered-structured substrates. Cleaving Sr2 Ru O4 at low temperature in ultrahigh vacuum exposes an atomically flat, solely SrO-terminated surface with up to micrometer-scale terraces. The deposition of La 2/3 Sr1/3 Mn O3 spontaneously diminishes the surface Ru O6 in-plane rotational distortion of the substrate and results in a cubic-like perovskite film structure with (La/Sr)-O layer termination. The interface is atomically sharp without obvious deviation of lattice spacing and chemical valence, except in the first unit cell where Ru-Mn intermixing is observed. Finally, these results demonstrate that film growth on a cleaved substrate can be an alternative route to obtain well-defined interfaces and in addition increase the availability of substrates for future oxide films.

Authors:
 [1];  [1];  [2];  [3];  [4];  [4];  [5];  [5];  [1]
  1. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy
  2. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics and Astronomy; Brookhaven National Lab. (BNL), Upton, NY (United States). Dept. of Energy Science and Technology
  3. Brookhaven National Lab. (BNL), Upton, NY (United States). Dept. of Energy Science and Technology
  4. Univ. di Salerno, Fisciano, Salerno (Italy). CNR-SPIN Unità di Salerno and Dipartimento di Fisica “E.R. Caianiello”
  5. Tulane Univ., New Orleans, LA (United States). Dept. of Physics and Engineering Physics
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1480966
Alternate Identifier(s):
OSTI ID: 1478596
Report Number(s):
BNL-209415-2018-JAAM
Journal ID: ISSN 2475-9953; PRMHAR
Grant/Contract Number:  
SC0012704; AC02-98CH10886; SC0002136; SC0012432
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 10; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Siwakoti, Prahald, Guo, Hangwen, Wang, Zhen, Zhu, Yimei, Fittipaldi, Rosalba, Vecchione, Antonio, Wang, Y., Mao, Zhiqiang, and Zhang, Jiandi. Coherent growth of oxide films on a cleaved layered metal oxide substrate. United States: N. p., 2018. Web. doi:10.1103/PhysRevMaterials.2.104407.
Siwakoti, Prahald, Guo, Hangwen, Wang, Zhen, Zhu, Yimei, Fittipaldi, Rosalba, Vecchione, Antonio, Wang, Y., Mao, Zhiqiang, & Zhang, Jiandi. Coherent growth of oxide films on a cleaved layered metal oxide substrate. United States. doi:10.1103/PhysRevMaterials.2.104407.
Siwakoti, Prahald, Guo, Hangwen, Wang, Zhen, Zhu, Yimei, Fittipaldi, Rosalba, Vecchione, Antonio, Wang, Y., Mao, Zhiqiang, and Zhang, Jiandi. Thu . "Coherent growth of oxide films on a cleaved layered metal oxide substrate". United States. doi:10.1103/PhysRevMaterials.2.104407. https://www.osti.gov/servlets/purl/1480966.
@article{osti_1480966,
title = {Coherent growth of oxide films on a cleaved layered metal oxide substrate},
author = {Siwakoti, Prahald and Guo, Hangwen and Wang, Zhen and Zhu, Yimei and Fittipaldi, Rosalba and Vecchione, Antonio and Wang, Y. and Mao, Zhiqiang and Zhang, Jiandi},
abstractNote = {Understanding oxide interface-induced effects requires controlled epitaxial growth of films on well-defined substrate surfaces. While conventional film growth on ex situ prepared substrates has proven to be a successful route, the choices of appropriate substrates with atomically defined surfaces are limited. Here, by depositing La2/3 Sr1/3 Mn O3 on Sr2 Ru O4 (001), we present an alternative method of growing oxide thin films on in situ cleaved surfaces of layered-structured substrates. Cleaving Sr2 Ru O4 at low temperature in ultrahigh vacuum exposes an atomically flat, solely SrO-terminated surface with up to micrometer-scale terraces. The deposition of La 2/3 Sr1/3 Mn O3 spontaneously diminishes the surface Ru O6 in-plane rotational distortion of the substrate and results in a cubic-like perovskite film structure with (La/Sr)-O layer termination. The interface is atomically sharp without obvious deviation of lattice spacing and chemical valence, except in the first unit cell where Ru-Mn intermixing is observed. Finally, these results demonstrate that film growth on a cleaved substrate can be an alternative route to obtain well-defined interfaces and in addition increase the availability of substrates for future oxide films.},
doi = {10.1103/PhysRevMaterials.2.104407},
journal = {Physical Review Materials},
number = 10,
volume = 2,
place = {United States},
year = {2018},
month = {10}
}

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Figures / Tables:

Figure 1 Figure 1: (a) A ball model showing the possible structure of growth of LSMO thin films on SRO214 single crystals. (b) The RHEED pattern before and after growth are sharp. The oscillations indicate layer-by-layer growth.

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