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Title: Designing antiphase boundaries by atomic control of heterointerfaces

Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects—antiphase boundaries (APB) —with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La 2/3Sr 1/3MnO 3 thin film grown on Sr 2RuO 4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structuremore » phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory.« less
Authors:
 [1] ;  [2] ;  [3] ;  [2] ;  [4] ;  [5] ;  [5] ;  [2] ;  [4] ;  [2] ;  [2]
  1. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics & Astronomy; Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  2. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Physics & Astronomy
  3. Louisiana State Univ., Baton Rouge, LA (United States). Dept. of Mechanical & Industrial Engineering
  4. Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  5. Univ. di Salerno, Fisciano (Italy). Consiglio Nazionale Delle Ricerche-Superconducting and Other Innovative Materials and Devices Inst. (SPIN), Dipartimento di Fisica
Publication Date:
Report Number(s):
BNL-209361-2018-JAAM
Journal ID: ISSN 0027-8424
Grant/Contract Number:
SC0012704; SC0002136; AC02-98CH10886
Type:
Accepted Manuscript
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Volume: 115; Journal Issue: 38; Journal ID: ISSN 0027-8424
Publisher:
National Academy of Sciences, Washington, DC (United States)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; antiphase boundary; extended defect nucleation; interface; selectron microscopy; theory
OSTI Identifier:
1480961
Alternate Identifier(s):
OSTI ID: 1464332

Wang, Zhen, Guo, Hangwen, Shao, Shuai, Saghayezhian, Mohammad, Li, Jun, Fittipaldi, Rosalba, Vecchione, Antonio, Siwakoti, Prahald, Zhu, Yimei, Zhang, Jiandi, and Plummer, E. W.. Designing antiphase boundaries by atomic control of heterointerfaces. United States: N. p., Web. doi:10.1073/pnas.1808812115.
Wang, Zhen, Guo, Hangwen, Shao, Shuai, Saghayezhian, Mohammad, Li, Jun, Fittipaldi, Rosalba, Vecchione, Antonio, Siwakoti, Prahald, Zhu, Yimei, Zhang, Jiandi, & Plummer, E. W.. Designing antiphase boundaries by atomic control of heterointerfaces. United States. doi:10.1073/pnas.1808812115.
Wang, Zhen, Guo, Hangwen, Shao, Shuai, Saghayezhian, Mohammad, Li, Jun, Fittipaldi, Rosalba, Vecchione, Antonio, Siwakoti, Prahald, Zhu, Yimei, Zhang, Jiandi, and Plummer, E. W.. 2018. "Designing antiphase boundaries by atomic control of heterointerfaces". United States. doi:10.1073/pnas.1808812115.
@article{osti_1480961,
title = {Designing antiphase boundaries by atomic control of heterointerfaces},
author = {Wang, Zhen and Guo, Hangwen and Shao, Shuai and Saghayezhian, Mohammad and Li, Jun and Fittipaldi, Rosalba and Vecchione, Antonio and Siwakoti, Prahald and Zhu, Yimei and Zhang, Jiandi and Plummer, E. W.},
abstractNote = {Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects—antiphase boundaries (APB) —with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In La2/3Sr1/3MnO3 thin film grown on Sr2RuO4 substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory.},
doi = {10.1073/pnas.1808812115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 38,
volume = 115,
place = {United States},
year = {2018},
month = {8}
}

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