Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering
Abstract
We show that time-resolved x-ray scattering can be applied to polycrystalline materials for the measurement of carrier diffusion. A polycrystalline indium antimonide sample is prepared by high-intensity ultrafast laser surface melting and re-solidification under vacuum to create randomly oriented grains with an average size of 13 nm. Two static diffraction rings are simultaneously observed on a gated pixel array detector. Their centroids move following lower-intensity laser excitation, and utilizing an in-situ angular calibration, the transient lattice spacing is determined with femtometer accuracy, thereby allowing the measurement of charge carrier dynamics. Compared to bulk calculations, we find that carrier diffusion slows by more than one order of magnitude. This result provides evidence for the formation of potential energy barriers at the grain boundaries and demonstrates the capability of time-resolved x-ray scattering to probe nanoscale charge transport in materials other than near-perfect crystals.
- Authors:
-
- Korea Research Inst. of Standards and Science (KRISS), Daejeon (Korea, Republic of); Soongsil Univ., Seoul (Korea, Republic of). Dept. of Physics
- DePaul Univ., Chicago, IL (United States). Dept. of Physics
- Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
- Korea Research Inst. of Standards and Science (KRISS), Daejeon (Korea, Republic of); Univ. of Science and Technology (UST), Daejeon (Korea, Republic of). Dept. of Nanoscience
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States); Korea Research Inst. of Standards and Science (KRISS), Daejeon (Korea, Republic of); DePaul Univ., Chicago, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Research Foundation of Korea (NRF)
- OSTI Identifier:
- 1480691
- Alternate Identifier(s):
- OSTI ID: 1460914
- Grant/Contract Number:
- AC02-06CH11357; 2016K1A3A7A09005386
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 113; Journal Issue: 3; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; semiconductors; polycrystalline material; x-ray scattering; charge transport; crystal optics; optical diffraction; ultrafast lasers; potential energy barrier; crystallographic defects; thermodynamic states and processes
Citation Formats
Jo, Wonhyuk, Landahl, Eric C., DiChiara, Anthony D., Walko, Donald A., and Lee, Sooheyong. Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering. United States: N. p., 2018.
Web. doi:10.1063/1.5039582.
Jo, Wonhyuk, Landahl, Eric C., DiChiara, Anthony D., Walko, Donald A., & Lee, Sooheyong. Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering. United States. https://doi.org/10.1063/1.5039582
Jo, Wonhyuk, Landahl, Eric C., DiChiara, Anthony D., Walko, Donald A., and Lee, Sooheyong. Thu .
"Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering". United States. https://doi.org/10.1063/1.5039582. https://www.osti.gov/servlets/purl/1480691.
@article{osti_1480691,
title = {Measuring femtometer lattice displacements driven by free carrier diffusion in a polycrystalline semiconductor using time-resolved x-ray scattering},
author = {Jo, Wonhyuk and Landahl, Eric C. and DiChiara, Anthony D. and Walko, Donald A. and Lee, Sooheyong},
abstractNote = {We show that time-resolved x-ray scattering can be applied to polycrystalline materials for the measurement of carrier diffusion. A polycrystalline indium antimonide sample is prepared by high-intensity ultrafast laser surface melting and re-solidification under vacuum to create randomly oriented grains with an average size of 13 nm. Two static diffraction rings are simultaneously observed on a gated pixel array detector. Their centroids move following lower-intensity laser excitation, and utilizing an in-situ angular calibration, the transient lattice spacing is determined with femtometer accuracy, thereby allowing the measurement of charge carrier dynamics. Compared to bulk calculations, we find that carrier diffusion slows by more than one order of magnitude. This result provides evidence for the formation of potential energy barriers at the grain boundaries and demonstrates the capability of time-resolved x-ray scattering to probe nanoscale charge transport in materials other than near-perfect crystals.},
doi = {10.1063/1.5039582},
journal = {Applied Physics Letters},
number = 3,
volume = 113,
place = {United States},
year = {Thu Jul 19 00:00:00 EDT 2018},
month = {Thu Jul 19 00:00:00 EDT 2018}
}
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Works referencing / citing this record:
Probing Electronic Strain Generation by Separated Electron-Hole Pairs Using Time-Resolved X-ray Scattering
journal, November 2019
- Lee, Sooheyong; Jo, Wonhyuk; DiChiara, Anthony D.
- Applied Sciences, Vol. 9, Issue 22