Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping

Zhang, Hai -Tian; Zhang, Zhen; Zhou, Hua; Tanaka, Hidekazu; Fong, Dillon D.; Ramanathan, Shriram

doi:10.1080/23746149.2018.1523686

Title: Beyond electrostatic modification: design and discovery of functional oxide phases via ionic-electronic doping

Journal Article · 23 October 2018 · Advances in Physics: X

DOI: https://doi.org/10.1080/23746149.2018.1523686 · OSTI ID:1480309

Zhang, Hai -Tian ^[1]; Zhang, Zhen ^[1]; Zhou, Hua ^[2]; Tanaka, Hidekazu ^[3]; Fong, Dillon D. ^[2]; Ramanathan, Shriram ^[1]

Purdue Univ., West Lafayette, IN (United States)
Argonne National Lab. (ANL), Argonne, IL (United States)
Osaka Univ., Osaka (Japan)

A new research field of functional materials and device physics is emerging that combines ionic transport with charge carrier modulation to realize emergent physical properties and discovery of metastable phases. The paradigm for enabling function extends far beyond carrier accumulation or depletion in band semiconductors or simply moving ions through an insulating electrolyte. Rather, by careful selection of electronically or structurally fragile materials, one can collapse or open band gaps via extreme ionic dopant concentration, or reconfigure their entire crystal structure to create new phases. Electron-electron and electron-lattice interactions can be coupled or controlled independently in such systems via electric fields without thermal constraints by use of ionic dopants. The unifying theme across these studies is to introduce ions and electrons via electric fields through interfaces with electrochemistry playing a dominant role. In this review, we briefly summarize this nascent field of iontronics and discuss principal results to date with examples from binary and complex oxides as well as selected 2D materials systems. Here, we conclude the review by highlighting gaps in fundamental scientific understanding and prospects for the use of such novel devices in future electronic, photonic and energy technologies.

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Research Organization:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Air Force Research Laboratory (AFRL), Air Force Office of Scientific Research (AFOSR); Argonne National Laboratory, Advanced Photon Source; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1480309

Journal Information:: Advances in Physics: X, Journal Name: Advances in Physics: X Journal Issue: 1 Vol. 4; ISSN 2374-6149

Publisher:: Taylor & FrancisCopyright Statement

Country of Publication:: United States

Language:: English

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