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Title: Particle atomic layer deposition of alumina for sintering yttria-stabilized cubic zirconia

The addition of aluminum oxide (Al 2O 3) as a sintering aid to yttria-stabilized zirconia (YSZ) reduces the required densification temperature. Sintering aids are incorporated using a number of processes which can lead to ambiguity when determining the effect of the sintering aid on the densification mechanism. In this study, a novel method for sintering aid addition, Particle Atomic Layer Deposition (ALD), was used to deposit an amorphous Al 2O 3 thin film on YSZ particles. Transmission electron microscopy confirmed the deposition of conformal Al 2O 3 thin films on the surface of the YSZ particles. The addition of Al 2O 3 to YSZ reduced the temperature at which densification began by ~75 degrees C, and 2.2 wt% Al 2O 3 addition resulted in a minimum activation energy for the intermediate stage of densification. This concentration is well in excess of the solubility limit of Al 2O 3 in YSZ, showing that Al 2O 3 does not enhance the densification of YSZ solely by dissolving into the YSZ lattice and activating volume diffusion. The addition of 0.7 wt% Al 2O 3 with one Particle ALD cycle enhanced the ionic conductivity of YSZ by 23% after sintering at 1350 degrees Cmore » for 2 hours, demonstrating that dense parts with high oxygen ion conductivities can be produced after sintering at reduced temperatures. One Particle ALD cycle is a fast, easily scaled-up process that eliminates the use of solvents and has substantial cost/performance advantages over conventional processing.« less
Authors:
ORCiD logo [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [2] ;  [2] ;  [3] ;  [4] ; ORCiD logo [1]
  1. Univ. of Colorado, Boulder, CO (United States)
  2. Colorado School of Mines, Golden, CO (United States)
  3. ALD NanoSolutions, Inc. Broomfield CO (United States)
  4. National Renewable Energy Lab. (NREL), Golden, CO (United States); Univ. of Colorado, Boulder, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-72691
Journal ID: ISSN 0002-7820
Grant/Contract Number:
AC36-08GO28308
Type:
Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Name: Journal of the American Ceramic Society; Journal ID: ISSN 0002-7820
Publisher:
American Ceramic Society
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
National Science Foundation (NSF); USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; atomic layer deposition; sintering; thin films
OSTI Identifier:
1480237

O'Toole, Rebecca J., Bartel, Christopher J., Kodas, Maila U., Horrell, Alexa J., Ricote, Sandrine, Sullivan, Neal P., Gump, Christopher J., Musgrave, Charles B., and Weimer, Alan W.. Particle atomic layer deposition of alumina for sintering yttria-stabilized cubic zirconia. United States: N. p., Web. doi:10.1111/jace.16091.
O'Toole, Rebecca J., Bartel, Christopher J., Kodas, Maila U., Horrell, Alexa J., Ricote, Sandrine, Sullivan, Neal P., Gump, Christopher J., Musgrave, Charles B., & Weimer, Alan W.. Particle atomic layer deposition of alumina for sintering yttria-stabilized cubic zirconia. United States. doi:10.1111/jace.16091.
O'Toole, Rebecca J., Bartel, Christopher J., Kodas, Maila U., Horrell, Alexa J., Ricote, Sandrine, Sullivan, Neal P., Gump, Christopher J., Musgrave, Charles B., and Weimer, Alan W.. 2018. "Particle atomic layer deposition of alumina for sintering yttria-stabilized cubic zirconia". United States. doi:10.1111/jace.16091.
@article{osti_1480237,
title = {Particle atomic layer deposition of alumina for sintering yttria-stabilized cubic zirconia},
author = {O'Toole, Rebecca J. and Bartel, Christopher J. and Kodas, Maila U. and Horrell, Alexa J. and Ricote, Sandrine and Sullivan, Neal P. and Gump, Christopher J. and Musgrave, Charles B. and Weimer, Alan W.},
abstractNote = {The addition of aluminum oxide (Al2O3) as a sintering aid to yttria-stabilized zirconia (YSZ) reduces the required densification temperature. Sintering aids are incorporated using a number of processes which can lead to ambiguity when determining the effect of the sintering aid on the densification mechanism. In this study, a novel method for sintering aid addition, Particle Atomic Layer Deposition (ALD), was used to deposit an amorphous Al2O3 thin film on YSZ particles. Transmission electron microscopy confirmed the deposition of conformal Al2O3 thin films on the surface of the YSZ particles. The addition of Al2O3 to YSZ reduced the temperature at which densification began by ~75 degrees C, and 2.2 wt% Al2O3 addition resulted in a minimum activation energy for the intermediate stage of densification. This concentration is well in excess of the solubility limit of Al2O3 in YSZ, showing that Al2O3 does not enhance the densification of YSZ solely by dissolving into the YSZ lattice and activating volume diffusion. The addition of 0.7 wt% Al2O3 with one Particle ALD cycle enhanced the ionic conductivity of YSZ by 23% after sintering at 1350 degrees C for 2 hours, demonstrating that dense parts with high oxygen ion conductivities can be produced after sintering at reduced temperatures. One Particle ALD cycle is a fast, easily scaled-up process that eliminates the use of solvents and has substantial cost/performance advantages over conventional processing.},
doi = {10.1111/jace.16091},
journal = {Journal of the American Ceramic Society},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {9}
}

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