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Title: Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

Abstract

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch–Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch–Grüneisen temperature is nearly fixed at 100 K. Finally, this work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.

Authors:
 [1];  [2];  [3];  [2];  [2];  [2];  [3];  [4];  [5]; ORCiD logo [2]
+ Show Author Affiliations
  1. Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics, and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
  2. Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics, and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  4. Imperial College, London (United Kingdom). Dept. of Materials and Physics, and the Thomas Young Centre for Theory and Simulation of Materials
  5. Univ. of Oxford (United Kingdom). Dept. of Materials
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE; National Natural Science Foundation of China (NSFC)
OSTI Identifier:
1479984
Report Number(s):
LA-UR-18-20121
Journal ID: ISSN 1433-7851
Grant/Contract Number:  
AC52-06NA25396; 2016YFA0300902; 2015CB921001; 11774396; XDB07030100; 11474328; D161100002416003; 11290164
Resource Type:
Accepted Manuscript
Journal Name:
Angewandte Chemie (International Edition)
Additional Journal Information:
Journal Name: Angewandte Chemie (International Edition); Journal Volume: 57; Journal Issue: 17; Journal ID: ISSN 1433-7851
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Material Science

Citation Formats

Zhang, Jin, Zhang, Jia, Zhou, Liujiang, Cheng, Cai, Lian, Chao, Liu, Jian, Tretiak, Sergei, Lischner, Johannes, Giustino, Feliciano, and Meng, Sheng. Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene. United States: N. p., 2018. Web. doi:10.1002/anie.201800087.
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Zhang, Jin, Zhang, Jia, Zhou, Liujiang, Cheng, Cai, Lian, Chao, Liu, Jian, Tretiak, Sergei, Lischner, Johannes, Giustino, Feliciano, & Meng, Sheng. Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene. United States. https://doi.org/10.1002/anie.201800087
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Zhang, Jin, Zhang, Jia, Zhou, Liujiang, Cheng, Cai, Lian, Chao, Liu, Jian, Tretiak, Sergei, Lischner, Johannes, Giustino, Feliciano, and Meng, Sheng. Tue . "Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene". United States. https://doi.org/10.1002/anie.201800087. https://www.osti.gov/servlets/purl/1479984.
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@article{osti_1479984,
title = {Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene},
author = {Zhang, Jin and Zhang, Jia and Zhou, Liujiang and Cheng, Cai and Lian, Chao and Liu, Jian and Tretiak, Sergei and Lischner, Johannes and Giustino, Feliciano and Meng, Sheng},
abstractNote = {Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch–Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch–Grüneisen temperature is nearly fixed at 100 K. Finally, this work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.},
doi = {10.1002/anie.201800087},
journal = {Angewandte Chemie (International Edition)},
number = 17,
volume = 57,
place = {United States},
year = {2018},
month = {2}
}
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Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1002/anie.201800087
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Cited by: 7 works
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Figures / Tables:

Figure 1 Figure 1: (a-c) Atomic structures of selected two-dimensional borophenes with the unit cells (top and side views). (a) β12, (b)χ3, (c) triangle borophene. (d-f) Electrical resistivity of the three borophenes in linear scale (solid black lines). The insets (light blue regimes) in (d-f) show the resistivity at low temperatures. (g-i)more » Electrical resistivity in logarithmic scale. The vertical dashed lines in (d-i) indicate the crossover between two regions. Light red regions show ρ~T, while light blue regions indicate ρ~T4.« less
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