Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

Zhang, Jin; Zhang, Jia; Zhou, Liujiang; Cheng, Cai; Lian, Chao; Liu, Jian; Tretiak, Sergei; Lischner, Johannes; Giustino, Feliciano; Meng, Sheng

doi:10.1002/anie.201800087

Title: Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

Journal Article · 27 February 2018 · Angewandte Chemie (International Edition)

DOI: https://doi.org/10.1002/anie.201800087 · OSTI ID:1479984

Zhang, Jin ^[1]; Zhang, Jia ^[2]; Zhou, Liujiang ^[3]; Cheng, Cai ^[2]; Lian, Chao ^[2]; Liu, Jian ^[2]; Tretiak, Sergei ^[3]; Lischner, Johannes ^[4]; Giustino, Feliciano ^[5];

^[2]

Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics, and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
Chinese Academy of Sciences (CAS), Beijing (China). Beijing National Lab. for Condensed Matter Physics, and Inst. of Physics; Univ. of Chinese Academy of Sciences, Beijing (China). School of Physical Sciences
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Imperial College, London (United Kingdom). Dept. of Materials and Physics, and the Thomas Young Centre for Theory and Simulation of Materials
Univ. of Oxford (United Kingdom). Dept. of Materials

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch–Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch–Grüneisen temperature is nearly fixed at 100 K. Finally, this work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.

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Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE; National Natural Science Foundation of China (NNSFC)

Grant/Contract Number:: AC52-06NA25396

OSTI ID:: 1479984

Report Number(s):: LA-UR--18-20121

Journal Information:: Angewandte Chemie (International Edition), Journal Name: Angewandte Chemie (International Edition) Journal Issue: 17 Vol. 57; ISSN 1433-7851

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Flat Boron: A New Cousin of Graphene Xie, Sheng‐Yi; Wang, Yeliang; Li, Xian‐Bin Advanced Materials, Vol. 31, Issue 36 https://doi.org/10.1002/adma.201900392	journal	June 2019
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