Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

Hagmann, Mark J.; Mousa, Marwan S.; Yarotski, Dmitry Anatolievitch

doi:10.9729/AM.2017.47.3.95

Title: Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

Journal Article · 30 September 2017 · Applied Microscopy

DOI: https://doi.org/10.9729/AM.2017.47.3.95 · OSTI ID:1479944

Hagmann, Mark J. ^[1]; Mousa, Marwan S. ^[2];

^[3]

NewPath Research L.L.C., Salt Lake City, UT (United States)
Mu’tah University, Al-Karak (Jordan)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC52-06NA25396; SC0006339

OSTI ID:: 1479944

Report Number(s):: LA-UR-18-29738

Journal Information:: Applied Microscopy, Vol. 47, Issue 3; ISSN 2287-5123

Publisher:: Korean Society of MicroscopyCopyright Statement

Country of Publication:: United States

Language:: English

References (20)

Improved analysis of spreading resistance measurements Dunham, Scott T. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 12, Issue 1 https://doi.org/10.1116/1.587155	journal	January 1994
The size effect and the non-local Boltzmann transport equation in orifice and disk geometry Wexler, G. Proceedings of the Physical Society, Vol. 89, Issue 4 https://doi.org/10.1088/0370-1328/89/4/316	journal	December 1966
Moore's Law: The First Ending and a New Beginning Chien, Andrew A.; Karamcheti, Vijay Computer, Vol. 46, Issue 12 https://doi.org/10.1109/MC.2013.431	journal	December 2013
Possible applications of scanning frequency comb microscopy for carrier profiling in semiconductors Hagmann, Mark J.; Andrei, Petru; Pandey, Shashank Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, Issue 2 https://doi.org/10.1116/1.4905095	journal	December 2014
The mean free path of electrons in metals Sondheimer, E. H. Advances in Physics, Vol. 1, Issue 1 https://doi.org/10.1080/00018735200101151	journal	January 1952
Transition from Sharvin to Drude resistance in high-mobility wires de Jong, M. J. M. Physical Review B, Vol. 49, Issue 11 https://doi.org/10.1103/PhysRevB.49.7778	journal	March 1994
Overcoated diamond tips for nanometer-scale semiconductor device characterization Hantschel, T.; Tsigkourakos, M.; Kluge, J. Microelectronic Engineering, Vol. 141 https://doi.org/10.1016/j.mee.2014.11.023	journal	June 2015
The Transport of heat Between Dissimilar Solids at low Temperatures Little, W. A. Canadian Journal of Physics, Vol. 37, Issue 3 https://doi.org/10.1139/p59-037	journal	March 1959
Simplified calculations of the lateral distribution for the current in tunnelling junctions having general shapes Hagmann, M. J.; Henage, T. E. Electronics Letters, Vol. 52, Issue 5 https://doi.org/10.1049/el.2015.3671	journal	March 2016
Conductive diamond tips with sub-nanometer electrical resolution for characterization of nanoelectronics device structures Hantschel, T.; Demeulemeester, C.; Eyben, P. physica status solidi (a), Vol. 206, Issue 9 https://doi.org/10.1002/pssa.200982212	journal	September 2009
Method to determine defect positions below a metal surface by STM Avotina, Ye. S.; Kolesnichenko, Yu. A.; Omelyanchouk, A. N. Physical Review B, Vol. 71, Issue 11 https://doi.org/10.1103/PhysRevB.71.115430	journal	March 2005
Observation of 200th harmonic with fractional linewidth of 10 ⁻¹⁰ in a microwave frequency comb generated in a tunneling junction Hagmann, Mark J.; Taylor, Antoinette J.; Yarotski, Dmitry A. Applied Physics Letters, Vol. 101, Issue 24 https://doi.org/10.1063/1.4769982	journal	December 2012
Atom probe tomography Kelly, Thomas F.; Miller, Michael K. Review of Scientific Instruments, Vol. 78, Issue 3 https://doi.org/10.1063/1.2709758	journal	March 2007
Fifty Years of Moore's Law Mack, Chris A. IEEE Transactions on Semiconductor Manufacturing, Vol. 24, Issue 2 https://doi.org/10.1109/TSM.2010.2096437	journal	May 2011
Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy Yokoyama, T.; Takenaka, R.; Kamimura, Y. Applied Physics Letters, Vol. 95, Issue 20 https://doi.org/10.1063/1.3266926	journal	November 2009
Diamond scanning probes with sub-nanometer resolution for advanced nanoelectronics device characterization Hantschel, T.; Tsigkourakos, M.; Zha, L. Microelectronic Engineering, Vol. 159 https://doi.org/10.1016/j.mee.2016.02.053	journal	June 2016
Spreading Resistance as a Function of Frequency Dickens, L. E. IEEE Transactions on Microwave Theory and Techniques, Vol. 15, Issue 2 https://doi.org/10.1109/TMTT.1967.1126383	journal	February 1967
Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope Hagmann, Mark J.; Yarotski, Dmitry A.; Mousa, Marwan S. Microscopy and Microanalysis, Vol. 23, Issue 2 https://doi.org/10.1017/S1431927616012563	journal	December 2016
Dopant/carrier profiling for 3D-structures: Dopant/carrier profiling for 3D-structures Vandervorst, Wilfried; Schulze, Andreas; Kambham, Ajay Kumar physica status solidi (c), Vol. 11, Issue 1 https://doi.org/10.1002/pssc.201300329	journal	December 2013
Current at the Nanoscale: An Introduction to Nanoelectronics Durkan, Colm https://doi.org/10.1142/8371	book	November 2013

Cited By (1)

Simulation of sub-nm carrier profiling by scanning frequency comb microscopy Hagmann, M. J.; Wiedemeier, J. AIP Advances, Vol. 9, Issue 5 https://doi.org/10.1063/1.5092282	journal	May 2019

Similar Records

Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope

Journal Article · 2016 · Microscopy and Microanalysis · OSTI ID:1483526

Hagmann, Mark J.; Yarotski, Dmitry A.; Mousa, Marwan S.

Possible applications of scanning frequency comb microscopy for carrier profiling in semiconductors

Journal Article · 2014 · Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena · OSTI ID:1337710

Hagmann, Mark J.; Andrei, Petru; Pandey, Shashank; +1 more

High-resolution and site-specific scanning spreading resistance microscopy and its applications to silicon devices

Journal Article · 2012 · AIP Conference Proceedings · OSTI ID:22075702

Zhang, L; Koike, M; Takeno, S; +1 more

Related Subjects

36 MATERIALS SCIENCE
Carrier profiling
Scanning spreading resistance microscopy
Scanning frequency comb microscopy

Title: Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

Citation Formats

References (20)

Cited By (1)

Similar Records

Related Subjects