Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy
Abstract
High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.
- Authors:
-
[3]
- NewPath Research L.L.C., Salt Lake City, UT (United States)
- Mu’tah University, Al-Karak (Jordan)
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Publication Date:
- Research Org.:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1479944
- Report Number(s):
- LA-UR-18-29738
Journal ID: ISSN 2287-5123
- Grant/Contract Number:
- AC52-06NA25396; SC0006339
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Microscopy
- Additional Journal Information:
- Journal Volume: 47; Journal Issue: 3; Journal ID: ISSN 2287-5123
- Publisher:
- Korean Society of Microscopy
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Carrier profiling; Scanning spreading resistance microscopy; Scanning frequency comb microscopy
Citation Formats
Hagmann, Mark J., Mousa, Marwan S., and Yarotski, Dmitry Anatolievitch. Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy. United States: N. p., 2017.
Web. doi:10.9729/AM.2017.47.3.95.
Hagmann, Mark J., Mousa, Marwan S., & Yarotski, Dmitry Anatolievitch. Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy. United States. https://doi.org/10.9729/AM.2017.47.3.95
Hagmann, Mark J., Mousa, Marwan S., and Yarotski, Dmitry Anatolievitch. Sat .
"Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy". United States. https://doi.org/10.9729/AM.2017.47.3.95. https://www.osti.gov/servlets/purl/1479944.
@article{osti_1479944,
title = {Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy},
author = {Hagmann, Mark J. and Mousa, Marwan S. and Yarotski, Dmitry Anatolievitch},
abstractNote = {High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.},
doi = {10.9729/AM.2017.47.3.95},
journal = {Applied Microscopy},
number = 3,
volume = 47,
place = {United States},
year = {2017},
month = {9}
}
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Works referenced in this record:
Improved analysis of spreading resistance measurements
journal, January 1994
- Dunham, Scott T.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 12, Issue 1
The size effect and the non-local Boltzmann transport equation in orifice and disk geometry
journal, December 1966
- Wexler, G.
- Proceedings of the Physical Society, Vol. 89, Issue 4
Moore's Law: The First Ending and a New Beginning
journal, December 2013
- Chien, Andrew A.; Karamcheti, Vijay
- Computer, Vol. 46, Issue 12
Possible applications of scanning frequency comb microscopy for carrier profiling in semiconductors
journal, December 2014
- Hagmann, Mark J.; Andrei, Petru; Pandey, Shashank
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, Issue 2
The mean free path of electrons in metals
journal, January 1952
- Sondheimer, E. H.
- Advances in Physics, Vol. 1, Issue 1
Transition from Sharvin to Drude resistance in high-mobility wires
journal, March 1994
- de Jong, M. J. M.
- Physical Review B, Vol. 49, Issue 11
Overcoated diamond tips for nanometer-scale semiconductor device characterization
journal, June 2015
- Hantschel, T.; Tsigkourakos, M.; Kluge, J.
- Microelectronic Engineering, Vol. 141
The Transport of heat Between Dissimilar Solids at low Temperatures
journal, March 1959
- Little, W. A.
- Canadian Journal of Physics, Vol. 37, Issue 3
Simplified calculations of the lateral distribution for the current in tunnelling junctions having general shapes
journal, March 2016
- Hagmann, M. J.; Henage, T. E.
- Electronics Letters, Vol. 52, Issue 5
Conductive diamond tips with sub-nanometer electrical resolution for characterization of nanoelectronics device structures
journal, September 2009
- Hantschel, T.; Demeulemeester, C.; Eyben, P.
- physica status solidi (a), Vol. 206, Issue 9
Method to determine defect positions below a metal surface by STM
journal, March 2005
- Avotina, Ye. S.; Kolesnichenko, Yu. A.; Omelyanchouk, A. N.
- Physical Review B, Vol. 71, Issue 11
Observation of 200th harmonic with fractional linewidth of 10 −10 in a microwave frequency comb generated in a tunneling junction
journal, December 2012
- Hagmann, Mark J.; Taylor, Antoinette J.; Yarotski, Dmitry A.
- Applied Physics Letters, Vol. 101, Issue 24
Atom probe tomography
journal, March 2007
- Kelly, Thomas F.; Miller, Michael K.
- Review of Scientific Instruments, Vol. 78, Issue 3
Fifty Years of Moore's Law
journal, May 2011
- Mack, Chris A.
- IEEE Transactions on Semiconductor Manufacturing, Vol. 24, Issue 2
Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy
journal, November 2009
- Yokoyama, T.; Takenaka, R.; Kamimura, Y.
- Applied Physics Letters, Vol. 95, Issue 20
Diamond scanning probes with sub-nanometer resolution for advanced nanoelectronics device characterization
journal, June 2016
- Hantschel, T.; Tsigkourakos, M.; Zha, L.
- Microelectronic Engineering, Vol. 159
Spreading Resistance as a Function of Frequency
journal, February 1967
- Dickens, L. E.
- IEEE Transactions on Microwave Theory and Techniques, Vol. 15, Issue 2
Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope
journal, December 2016
- Hagmann, Mark J.; Yarotski, Dmitry A.; Mousa, Marwan S.
- Microscopy and Microanalysis, Vol. 23, Issue 2
Dopant/carrier profiling for 3D-structures: Dopant/carrier profiling for 3D-structures
journal, December 2013
- Vandervorst, Wilfried; Schulze, Andreas; Kambham, Ajay Kumar
- physica status solidi (c), Vol. 11, Issue 1
Works referencing / citing this record:
Simulation of sub-nm carrier profiling by scanning frequency comb microscopy
journal, May 2019
- Hagmann, M. J.; Wiedemeier, J.
- AIP Advances, Vol. 9, Issue 5