skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy

Abstract

High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.

Authors:
 [1];  [2]; ORCiD logo [3]
  1. NewPath Research L.L.C., Salt Lake City, UT (United States)
  2. Mu’tah University, Al-Karak (Jordan)
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1479944
Report Number(s):
LA-UR-18-29738
Journal ID: ISSN 2287-5123
Grant/Contract Number:  
AC52-06NA25396; SC0006339
Resource Type:
Accepted Manuscript
Journal Name:
Applied Microscopy
Additional Journal Information:
Journal Volume: 47; Journal Issue: 3; Journal ID: ISSN 2287-5123
Publisher:
Korean Society of Microscopy
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Carrier profiling; Scanning spreading resistance microscopy; Scanning frequency comb microscopy

Citation Formats

Hagmann, Mark J., Mousa, Marwan S., and Yarotski, Dmitry Anatolievitch. Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy. United States: N. p., 2017. Web. doi:10.9729/AM.2017.47.3.95.
Hagmann, Mark J., Mousa, Marwan S., & Yarotski, Dmitry Anatolievitch. Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy. United States. doi:10.9729/AM.2017.47.3.95.
Hagmann, Mark J., Mousa, Marwan S., and Yarotski, Dmitry Anatolievitch. Sat . "Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy". United States. doi:10.9729/AM.2017.47.3.95. https://www.osti.gov/servlets/purl/1479944.
@article{osti_1479944,
title = {Resolution in Carrier Profiling Semiconductors by Scanning Spreading Resistance Microscopy and Scanning Frequency Comb Microscopy},
author = {Hagmann, Mark J. and Mousa, Marwan S. and Yarotski, Dmitry Anatolievitch},
abstractNote = {High resolution measurements of the carrier profile in semiconductor devices is required as the semiconductor industry progresses from the 10-nm lithography node to 7-nm and beyond. We examine the factors which determine the resolution of the present method of scanning spreading resistance microscopy as well as such factors for the newer method of scanning frequency comb microscopy that is now under development. Also, for the first time, we consider the sensitivity of both methods to the location of heterogeneities in the semiconductor. In addition, mesoscopic effects on these measurements are considered for the first time. Two simple analytical models are extended to study the sensitivity to heterogeneities as well as mesoscopic effects.},
doi = {10.9729/AM.2017.47.3.95},
journal = {Applied Microscopy},
number = 3,
volume = 47,
place = {United States},
year = {2017},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share:

Works referenced in this record:

Improved analysis of spreading resistance measurements
journal, January 1994

  • Dunham, Scott T.
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 12, Issue 1
  • DOI: 10.1116/1.587155

The size effect and the non-local Boltzmann transport equation in orifice and disk geometry
journal, December 1966


Moore's Law: The First Ending and a New Beginning
journal, December 2013


Possible applications of scanning frequency comb microscopy for carrier profiling in semiconductors
journal, December 2014

  • Hagmann, Mark J.; Andrei, Petru; Pandey, Shashank
  • Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 33, Issue 2
  • DOI: 10.1116/1.4905095

The mean free path of electrons in metals
journal, January 1952


Transition from Sharvin to Drude resistance in high-mobility wires
journal, March 1994


Overcoated diamond tips for nanometer-scale semiconductor device characterization
journal, June 2015


The Transport of heat Between Dissimilar Solids at low Temperatures
journal, March 1959

  • Little, W. A.
  • Canadian Journal of Physics, Vol. 37, Issue 3
  • DOI: 10.1139/p59-037

Simplified calculations of the lateral distribution for the current in tunnelling junctions having general shapes
journal, March 2016


Conductive diamond tips with sub-nanometer electrical resolution for characterization of nanoelectronics device structures
journal, September 2009

  • Hantschel, T.; Demeulemeester, C.; Eyben, P.
  • physica status solidi (a), Vol. 206, Issue 9
  • DOI: 10.1002/pssa.200982212

Method to determine defect positions below a metal surface by STM
journal, March 2005

  • Avotina, Ye. S.; Kolesnichenko, Yu. A.; Omelyanchouk, A. N.
  • Physical Review B, Vol. 71, Issue 11
  • DOI: 10.1103/PhysRevB.71.115430

Observation of 200th harmonic with fractional linewidth of 10 −10 in a microwave frequency comb generated in a tunneling junction
journal, December 2012

  • Hagmann, Mark J.; Taylor, Antoinette J.; Yarotski, Dmitry A.
  • Applied Physics Letters, Vol. 101, Issue 24
  • DOI: 10.1063/1.4769982

Atom probe tomography
journal, March 2007

  • Kelly, Thomas F.; Miller, Michael K.
  • Review of Scientific Instruments, Vol. 78, Issue 3
  • DOI: 10.1063/1.2709758

Fifty Years of Moore's Law
journal, May 2011


Direct observation of carrier depletion around a dislocation in GaP by scanning spreading resistance microscopy
journal, November 2009

  • Yokoyama, T.; Takenaka, R.; Kamimura, Y.
  • Applied Physics Letters, Vol. 95, Issue 20
  • DOI: 10.1063/1.3266926

Diamond scanning probes with sub-nanometer resolution for advanced nanoelectronics device characterization
journal, June 2016


Spreading Resistance as a Function of Frequency
journal, February 1967


Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope
journal, December 2016

  • Hagmann, Mark J.; Yarotski, Dmitry A.; Mousa, Marwan S.
  • Microscopy and Microanalysis, Vol. 23, Issue 2
  • DOI: 10.1017/S1431927616012563

Dopant/carrier profiling for 3D-structures: Dopant/carrier profiling for 3D-structures
journal, December 2013

  • Vandervorst, Wilfried; Schulze, Andreas; Kambham, Ajay Kumar
  • physica status solidi (c), Vol. 11, Issue 1
  • DOI: 10.1002/pssc.201300329