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Title: Efficiency Increased to 15.2% for Ultra-Thin Cu(In,Ga)Se2 Solar Cells

We improved the efficiency of ultra-thin (0.49-um-thick) Cu(In,Ga)Se2 solar cells to 15.2% (officially measured). To achieve these results, we modified growth conditions from the 3-stage process but did not add post-deposition treatments or additional material layers. The increase in device efficiency is attributed to a steeper Ga gradient in the CIGS with higher Ga content near the Mo back contact, which can hinder electron-hole recombination at the interface. We discuss device measurements and film characterization for ultra-thin CIGS. Modeling is presented that shows the route to even higher efficiencies for devices with CIGS thicknesses of 0.5 um.
Authors:
ORCiD logo [1] ;  [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-70468
Grant/Contract Number:
AC36-08GO28308; SuNLaMP 30296
Type:
Accepted Manuscript
Journal Name:
Progress in Photovoltaics: Research & Applications
Additional Journal Information:
Journal Volume: 26; Journal Issue: 11
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Cu(In,Ga)Se2; CIGS; photovoltaic cells; thin films; semiconductor device modeling; current-voltage characteristics
OSTI Identifier:
1479872
Alternate Identifier(s):
OSTI ID: 1455074

Mansfield, Lorelle M, Kanevce, Ana, Harvey, Steven P, Bowers, Karen A, Beall, Carolyn L, Glynn, Stephen, and Repins, Ingrid L. Efficiency Increased to 15.2% for Ultra-Thin Cu(In,Ga)Se2 Solar Cells. United States: N. p., Web. doi:10.1002/pip.3033.
Mansfield, Lorelle M, Kanevce, Ana, Harvey, Steven P, Bowers, Karen A, Beall, Carolyn L, Glynn, Stephen, & Repins, Ingrid L. Efficiency Increased to 15.2% for Ultra-Thin Cu(In,Ga)Se2 Solar Cells. United States. doi:10.1002/pip.3033.
Mansfield, Lorelle M, Kanevce, Ana, Harvey, Steven P, Bowers, Karen A, Beall, Carolyn L, Glynn, Stephen, and Repins, Ingrid L. 2018. "Efficiency Increased to 15.2% for Ultra-Thin Cu(In,Ga)Se2 Solar Cells". United States. doi:10.1002/pip.3033.
@article{osti_1479872,
title = {Efficiency Increased to 15.2% for Ultra-Thin Cu(In,Ga)Se2 Solar Cells},
author = {Mansfield, Lorelle M and Kanevce, Ana and Harvey, Steven P and Bowers, Karen A and Beall, Carolyn L and Glynn, Stephen and Repins, Ingrid L},
abstractNote = {We improved the efficiency of ultra-thin (0.49-um-thick) Cu(In,Ga)Se2 solar cells to 15.2% (officially measured). To achieve these results, we modified growth conditions from the 3-stage process but did not add post-deposition treatments or additional material layers. The increase in device efficiency is attributed to a steeper Ga gradient in the CIGS with higher Ga content near the Mo back contact, which can hinder electron-hole recombination at the interface. We discuss device measurements and film characterization for ultra-thin CIGS. Modeling is presented that shows the route to even higher efficiencies for devices with CIGS thicknesses of 0.5 um.},
doi = {10.1002/pip.3033},
journal = {Progress in Photovoltaics: Research & Applications},
number = 11,
volume = 26,
place = {United States},
year = {2018},
month = {6}
}

Works referenced in this record:

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Optimization of CBD CdS process in high-efficiency Cu(In,Ga)Se2-based solar cells
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Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin-film solar cells
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