skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on October 20, 2019

Title: Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements

This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ , current-collector-free wafer curvature measurements.
Authors:
ORCiD logo [1] ; ORCiD logo [1]
  1. Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, USA
Publication Date:
Grant/Contract Number:
FE0023315
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Chemistry Chemical Physics
Additional Journal Information:
Journal Name: Physical Chemistry Chemical Physics Journal Volume: 20 Journal Issue: 43; Journal ID: ISSN 1463-9076
Publisher:
Royal Society of Chemistry (RSC)
Sponsoring Org:
USDOE Office of Fossil Energy (FE)
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1479831

Ma, Yuxi, and Nicholas, Jason D. Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements. United Kingdom: N. p., Web. doi:10.1039/C8CP04802A.
Ma, Yuxi, & Nicholas, Jason D. Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements. United Kingdom. doi:10.1039/C8CP04802A.
Ma, Yuxi, and Nicholas, Jason D. 2018. "Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements". United Kingdom. doi:10.1039/C8CP04802A.
@article{osti_1479831,
title = {Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements},
author = {Ma, Yuxi and Nicholas, Jason D.},
abstractNote = {This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ , current-collector-free wafer curvature measurements.},
doi = {10.1039/C8CP04802A},
journal = {Physical Chemistry Chemical Physics},
number = 43,
volume = 20,
place = {United Kingdom},
year = {2018},
month = {11}
}

Works referenced in this record:

Solar Water Splitting Cells
journal, November 2010
  • Walter, Michael G.; Warren, Emily L.; McKone, James R.
  • Chemical Reviews, Vol. 110, Issue 11, p. 6446-6473
  • DOI: 10.1021/cr1002326

Memristive devices for computing
journal, January 2013
  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240

Anisotropic Etching of Crystalline Silicon in Alkaline Solutions: I . Orientation Dependence and Behavior of Passivation Layers
journal, January 1990
  • Seidel, H.; Csepregi, L.; Heuberger, A.
  • Journal of The Electrochemical Society, Vol. 137, Issue 11, p. 3612-3626
  • DOI: 10.1149/1.2086277