Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements
Abstract
This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ , current-collector-free wafer curvature measurements.
- Authors:
-
[1];
[1]
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, USA
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Fossil Energy (FE)
- OSTI Identifier:
- 1479831
- Grant/Contract Number:
- FE0023315
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Chemistry Chemical Physics. PCCP (Print)
- Additional Journal Information:
- Journal Name: Physical Chemistry Chemical Physics. PCCP (Print) Journal Volume: 20 Journal Issue: 43; Journal ID: ISSN 1463-9076
- Publisher:
- Royal Society of Chemistry (RSC)
- Country of Publication:
- United Kingdom
- Language:
- English
Citation Formats
Ma, Yuxi, and Nicholas, Jason D. Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements. United Kingdom: N. p., 2018.
Web. doi:10.1039/C8CP04802A.
Ma, Yuxi, & Nicholas, Jason D. Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements. United Kingdom. https://doi.org/10.1039/C8CP04802A
Ma, Yuxi, and Nicholas, Jason D. Wed .
"Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements". United Kingdom. https://doi.org/10.1039/C8CP04802A.
@article{osti_1479831,
title = {Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements},
author = {Ma, Yuxi and Nicholas, Jason D.},
abstractNote = {This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ , current-collector-free wafer curvature measurements.},
doi = {10.1039/C8CP04802A},
journal = {Physical Chemistry Chemical Physics. PCCP (Print)},
number = 43,
volume = 20,
place = {United Kingdom},
year = {2018},
month = {11}
}
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https://doi.org/10.1039/C8CP04802A
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