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Title: Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements

Abstract

This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ , current-collector-free wafer curvature measurements.

Authors:
ORCiD logo [1]; ORCiD logo [1]
  1. Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, USA
Publication Date:
Sponsoring Org.:
USDOE Office of Fossil Energy (FE)
OSTI Identifier:
1479831
Grant/Contract Number:  
FE0023315
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Chemistry Chemical Physics. PCCP (Print)
Additional Journal Information:
Journal Name: Physical Chemistry Chemical Physics. PCCP (Print) Journal Volume: 20 Journal Issue: 43; Journal ID: ISSN 1463-9076
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Ma, Yuxi, and Nicholas, Jason D. Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements. United Kingdom: N. p., 2018. Web. doi:10.1039/C8CP04802A.
Ma, Yuxi, & Nicholas, Jason D. Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements. United Kingdom. doi:10.1039/C8CP04802A.
Ma, Yuxi, and Nicholas, Jason D. Wed . "Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements". United Kingdom. doi:10.1039/C8CP04802A.
@article{osti_1479831,
title = {Mechanical, thermal, and electrochemical properties of Pr doped ceria from wafer curvature measurements},
author = {Ma, Yuxi and Nicholas, Jason D.},
abstractNote = {This work demonstrates, for the first time, that a variety of disparate and technologically-relevent thermal, mechanical, and electrochemical oxygen-exchange material properties can all be obtained from in situ , current-collector-free wafer curvature measurements.},
doi = {10.1039/C8CP04802A},
journal = {Physical Chemistry Chemical Physics. PCCP (Print)},
number = 43,
volume = 20,
place = {United Kingdom},
year = {2018},
month = {11}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1039/C8CP04802A

Citation Metrics:
Cited by: 1 work
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