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Title: Ion mass dependence of irradiation-induced damage accumulation in KTaO 3

Damage production and amorphization resulting from the interaction of medium-energy (from 40 to 480 keV) noble-gas ions (from He to Kr) with potassium tantalate (KTaO 3) are determined using ion channeling measurements. A disorder accumulation model has been fit to the maximum damage concentration versus ion fluence to extract the cross sections for direct-impact and defect-stimulated amorphization, and the results indicate that defect-stimulated amorphization is the dominant mechanism. These cross sections exhibit a strong dependence on the calculated cross sections for displacing lattice atoms, indicating a dominant contribution of nuclear interactions to the defect production and amorphization processes under the irradiation conditions used in this study. Furthermore, these experimental findings, along with the model fits, suggest that the difference in recoil spectra between He and the other heavier ions may be the main driving force for the decreased damage efficiency observed for He ions, which results in a reduced rate of damage accumulation.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [3] ; ORCiD logo [1] ; ORCiD logo [4]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Friedrich-Schiller-Univ. Jena, Jena (Germany)
  3. Univ. of Jinan, Jinan (People's Republic of China); Shandong Univ., Jinan (People's Republic of China)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); The Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Grant/Contract Number:
AC05-00OR22725
Type:
Accepted Manuscript
Journal Name:
Journal of Materials Science
Additional Journal Information:
Journal Volume: 54; Journal Issue: 1; Journal ID: ISSN 0022-2461
Publisher:
Springer
Research Org:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1479764

Velişa, Gihan, Wendler, Elke, Wang, Liang -Ling, Zhang, Yanwen, and Weber, William J. Ion mass dependence of irradiation-induced damage accumulation in KTaO3. United States: N. p., Web. doi:10.1007/s10853-018-2864-5.
Velişa, Gihan, Wendler, Elke, Wang, Liang -Ling, Zhang, Yanwen, & Weber, William J. Ion mass dependence of irradiation-induced damage accumulation in KTaO3. United States. doi:10.1007/s10853-018-2864-5.
Velişa, Gihan, Wendler, Elke, Wang, Liang -Ling, Zhang, Yanwen, and Weber, William J. 2018. "Ion mass dependence of irradiation-induced damage accumulation in KTaO3". United States. doi:10.1007/s10853-018-2864-5.
@article{osti_1479764,
title = {Ion mass dependence of irradiation-induced damage accumulation in KTaO3},
author = {Velişa, Gihan and Wendler, Elke and Wang, Liang -Ling and Zhang, Yanwen and Weber, William J.},
abstractNote = {Damage production and amorphization resulting from the interaction of medium-energy (from 40 to 480 keV) noble-gas ions (from He to Kr) with potassium tantalate (KTaO3) are determined using ion channeling measurements. A disorder accumulation model has been fit to the maximum damage concentration versus ion fluence to extract the cross sections for direct-impact and defect-stimulated amorphization, and the results indicate that defect-stimulated amorphization is the dominant mechanism. These cross sections exhibit a strong dependence on the calculated cross sections for displacing lattice atoms, indicating a dominant contribution of nuclear interactions to the defect production and amorphization processes under the irradiation conditions used in this study. Furthermore, these experimental findings, along with the model fits, suggest that the difference in recoil spectra between He and the other heavier ions may be the main driving force for the decreased damage efficiency observed for He ions, which results in a reduced rate of damage accumulation.},
doi = {10.1007/s10853-018-2864-5},
journal = {Journal of Materials Science},
number = 1,
volume = 54,
place = {United States},
year = {2018},
month = {8}
}

Works referenced in this record:

Empirical modeling of the cross section of damage formation in ion implanted III-V semiconductors
journal, May 2012
  • Wendler, E.; Wendler, L.
  • Applied Physics Letters, Vol. 100, Issue 19, Article No. 192108
  • DOI: 10.1063/1.4711810