Perpendicular magnetic tunnel junction performance under mechanical strain
Abstract
We investigate effect of the mechanical stress on the performance of magnetic tunnel junctions with perpendicular magnetic anisotropy. We developed a 4-point bending setup that allows us to apply a constant stress over a large substrate area with access to electrical measurements and an external magnetic field. This setup enables us to measure key device performance parameters, such as tunnel magnetoresistance, switching current ( %), and thermal stability (Δ), as a function of applied stress. Finally, we find that variations in these parameters are negligible: less than 2% over the entire measured range between the zero stress condition and the maximum stress at the point of wafer breakage.
- Authors:
-
- Univ. of California, Berkeley, CA (United States). Dept. of Physics
- Samsung Semiconductor Inc., San Jose, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1479415
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 112; Journal Issue: 23; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; magnetism; magnetic memories; magnetic devices; mechanical stress; magnetic tunnel junctions; magnetic ordering; electronic transport; magnetic anisotropy; spin transport effects; ferromagnetic materials
Citation Formats
Roschewsky, Niklas, Schafer, Sebastian, Hellman, Frances, and Nikitin, Vladimir. Perpendicular magnetic tunnel junction performance under mechanical strain. United States: N. p., 2018.
Web. doi:10.1063/1.5034145.
Roschewsky, Niklas, Schafer, Sebastian, Hellman, Frances, & Nikitin, Vladimir. Perpendicular magnetic tunnel junction performance under mechanical strain. United States. https://doi.org/10.1063/1.5034145
Roschewsky, Niklas, Schafer, Sebastian, Hellman, Frances, and Nikitin, Vladimir. Tue .
"Perpendicular magnetic tunnel junction performance under mechanical strain". United States. https://doi.org/10.1063/1.5034145. https://www.osti.gov/servlets/purl/1479415.
@article{osti_1479415,
title = {Perpendicular magnetic tunnel junction performance under mechanical strain},
author = {Roschewsky, Niklas and Schafer, Sebastian and Hellman, Frances and Nikitin, Vladimir},
abstractNote = {We investigate effect of the mechanical stress on the performance of magnetic tunnel junctions with perpendicular magnetic anisotropy. We developed a 4-point bending setup that allows us to apply a constant stress over a large substrate area with access to electrical measurements and an external magnetic field. This setup enables us to measure key device performance parameters, such as tunnel magnetoresistance, switching current ( I c 50%), and thermal stability (Δ), as a function of applied stress. Finally, we find that variations in these parameters are negligible: less than 2% over the entire measured range between the zero stress condition and the maximum stress at the point of wafer breakage.},
doi = {10.1063/1.5034145},
journal = {Applied Physics Letters},
number = 23,
volume = 112,
place = {United States},
year = {Tue Jun 05 00:00:00 EDT 2018},
month = {Tue Jun 05 00:00:00 EDT 2018}
}
Web of Science
Figures / Tables:
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