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Title: Perpendicular magnetic tunnel junction performance under mechanical strain

Abstract

We investigate effect of the mechanical stress on the performance of magnetic tunnel junctions with perpendicular magnetic anisotropy. We developed a 4-point bending setup that allows us to apply a constant stress over a large substrate area with access to electrical measurements and an external magnetic field. This setup enables us to measure key device performance parameters, such as tunnel magnetoresistance, switching current ( I c 50 %), and thermal stability (Δ), as a function of applied stress. Finally, we find that variations in these parameters are negligible: less than 2% over the entire measured range between the zero stress condition and the maximum stress at the point of wafer breakage.

Authors:
 [1];  [2];  [1];  [2]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Physics
  2. Samsung Semiconductor Inc., San Jose, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1479415
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; magnetism; magnetic memories; magnetic devices; mechanical stress; magnetic tunnel junctions; magnetic ordering; electronic transport; magnetic anisotropy; spin transport effects; ferromagnetic materials

Citation Formats

Roschewsky, Niklas, Schafer, Sebastian, Hellman, Frances, and Nikitin, Vladimir. Perpendicular magnetic tunnel junction performance under mechanical strain. United States: N. p., 2018. Web. https://doi.org/10.1063/1.5034145.
Roschewsky, Niklas, Schafer, Sebastian, Hellman, Frances, & Nikitin, Vladimir. Perpendicular magnetic tunnel junction performance under mechanical strain. United States. https://doi.org/10.1063/1.5034145
Roschewsky, Niklas, Schafer, Sebastian, Hellman, Frances, and Nikitin, Vladimir. Tue . "Perpendicular magnetic tunnel junction performance under mechanical strain". United States. https://doi.org/10.1063/1.5034145. https://www.osti.gov/servlets/purl/1479415.
@article{osti_1479415,
title = {Perpendicular magnetic tunnel junction performance under mechanical strain},
author = {Roschewsky, Niklas and Schafer, Sebastian and Hellman, Frances and Nikitin, Vladimir},
abstractNote = {We investigate effect of the mechanical stress on the performance of magnetic tunnel junctions with perpendicular magnetic anisotropy. We developed a 4-point bending setup that allows us to apply a constant stress over a large substrate area with access to electrical measurements and an external magnetic field. This setup enables us to measure key device performance parameters, such as tunnel magnetoresistance, switching current ( I c 50%), and thermal stability (Δ), as a function of applied stress. Finally, we find that variations in these parameters are negligible: less than 2% over the entire measured range between the zero stress condition and the maximum stress at the point of wafer breakage.},
doi = {10.1063/1.5034145},
journal = {Applied Physics Letters},
number = 23,
volume = 112,
place = {United States},
year = {2018},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

FIG. 1 FIG. 1: FIG. 1. Schematics of the 4-point bending setup. The wafer is pushed up by a force F in the center while two supporting pins hold the position fixed at the outside edges. The mechanical stress in the central region (light gray) is constant. The magnetic tunnel junctions undermore » test have perpendicular magnetic anisotropy.« less

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