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Title: Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency

The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe 2-MoS 2 lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. As a result, these robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [4] ;  [4] ;  [5] ;  [3] ;  [2] ;  [2]
  1. King Abdullah Univ. of Science and Technology, Thuwal (King of Saudi Arabia); National Tsing Hua Univ., Taiwan (Republic of China)
  2. King Abdullah Univ. of Science and Technology, Thuwal (King of Saudi Arabia)
  3. National Univ. of Singapore (Singapore)
  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba (Japan)
  5. National Tsing Hua Univ., Taiwan (Republic of China)
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 32; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 2D materials; lateral heterostructures; monolayer; solar cells; transition metal dichalcogenides
OSTI Identifier:
1479324

Tsai, Meng -Lin, Li, Ming -Yang, Retamal, José Ramón Durán, Lam, Kai -Tak, Lin, Yung -Chang, Suenaga, Kazu, Chen, Lih -Juann, Liang, Gengchiau, Li, Lain -Jong, and He, Jr -Hau. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency. United States: N. p., Web. doi:10.1002/adma.201701168.
Tsai, Meng -Lin, Li, Ming -Yang, Retamal, José Ramón Durán, Lam, Kai -Tak, Lin, Yung -Chang, Suenaga, Kazu, Chen, Lih -Juann, Liang, Gengchiau, Li, Lain -Jong, & He, Jr -Hau. Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency. United States. doi:10.1002/adma.201701168.
Tsai, Meng -Lin, Li, Ming -Yang, Retamal, José Ramón Durán, Lam, Kai -Tak, Lin, Yung -Chang, Suenaga, Kazu, Chen, Lih -Juann, Liang, Gengchiau, Li, Lain -Jong, and He, Jr -Hau. 2017. "Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency". United States. doi:10.1002/adma.201701168. https://www.osti.gov/servlets/purl/1479324.
@article{osti_1479324,
title = {Single Atomically Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency},
author = {Tsai, Meng -Lin and Li, Ming -Yang and Retamal, José Ramón Durán and Lam, Kai -Tak and Lin, Yung -Chang and Suenaga, Kazu and Chen, Lih -Juann and Liang, Gengchiau and Li, Lain -Jong and He, Jr -Hau},
abstractNote = {The recent development of 2D monolayer lateral semiconductor has created new paradigm to develop p-n heterojunctions. Albeit, the growth methods of these heterostructures typically result in alloy structures at the interface, limiting the development for high-efficiency photovoltaic (PV) devices. Here, the PV properties of sequentially grown alloy-free 2D monolayer WSe2-MoS2 lateral p-n heterojunction are explores. The PV devices show an extraordinary power conversion efficiency of 2.56% under AM 1.5G illumination. The large surface active area enables the full exposure of the depletion region, leading to excellent omnidirectional light harvesting characteristic with only 5% reduction of efficiency at incident angles up to 75°. Modeling studies demonstrate the PV devices comply with typical principles, increasing the feasibility for further development. Furthermore, the appropriate electrode-spacing design can lead to environment-independent PV properties. As a result, these robust PV properties deriving from the atomically sharp lateral p-n interface can help develop the next-generation photovoltaics.},
doi = {10.1002/adma.201701168},
journal = {Advanced Materials},
number = 32,
volume = 29,
place = {United States},
year = {2017},
month = {6}
}

Works referenced in this record:

Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
journal, July 2013
  • Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C.
  • Nano Letters, Vol. 13, Issue 8, p. 3664-3670
  • DOI: 10.1021/nl401544y

Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
journal, September 2014
  • Duan, Xidong; Wang, Chen; Shaw, Jonathan C.
  • Nature Nanotechnology, Vol. 9, Issue 12, p. 1024-1030
  • DOI: 10.1038/nnano.2014.222

Graphene-Like Two-Dimensional Materials
journal, January 2013
  • Xu, Mingsheng; Liang, Tao; Shi, Minmin
  • Chemical Reviews, Vol. 113, Issue 5, p. 3766-3798
  • DOI: 10.1021/cr300263a

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Lateral heterojunctions within monolayer MoSe2�WSe2 semiconductors
journal, August 2014
  • Huang, Chunming; Wu, Sanfeng; Sanchez, Ana M.
  • Nature Materials, Vol. 13, Issue 12, p. 1096-1101
  • DOI: 10.1038/nmat4064