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Title: Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

Abstract

We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.

Authors:
 [1];  [1];  [2];  [1];  [3];  [3];  [4];  [1];  [2];  [2];  [1]
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  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Imperial College London, London (United Kingdom)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  4. Univ. of California, Riverside, CA (United States); The Ohio State Univ., Columbus, OH (United States)
Publication Date:
Research Org.:
University of California, Berkeley, CA (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1478653
Alternate Identifier(s):
OSTI ID: 1478693; OSTI ID: 1581315
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 15; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Graphene; Hydrogen; STM

Citation Formats

Wong, Dillon, Wang, Yang, Jin, Wuwei, Tsai, Hsin -Zon, Bostwick, Aaron, Rotenberg, Eli, Kawakami, Roland K., Zettl, Alex, Mostofi, Arash A., Lischner, Johannes, and Crommie, Michael F. Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.98.155436.
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Wong, Dillon, Wang, Yang, Jin, Wuwei, Tsai, Hsin -Zon, Bostwick, Aaron, Rotenberg, Eli, Kawakami, Roland K., Zettl, Alex, Mostofi, Arash A., Lischner, Johannes, & Crommie, Michael F. Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices. United States. https://doi.org/10.1103/PhysRevB.98.155436
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Wong, Dillon, Wang, Yang, Jin, Wuwei, Tsai, Hsin -Zon, Bostwick, Aaron, Rotenberg, Eli, Kawakami, Roland K., Zettl, Alex, Mostofi, Arash A., Lischner, Johannes, and Crommie, Michael F. Mon . "Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices". United States. https://doi.org/10.1103/PhysRevB.98.155436. https://www.osti.gov/servlets/purl/1478653.
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@article{osti_1478653,
title = {Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices},
author = {Wong, Dillon and Wang, Yang and Jin, Wuwei and Tsai, Hsin -Zon and Bostwick, Aaron and Rotenberg, Eli and Kawakami, Roland K. and Zettl, Alex and Mostofi, Arash A. and Lischner, Johannes and Crommie, Michael F.},
abstractNote = {We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.},
doi = {10.1103/PhysRevB.98.155436},
journal = {Physical Review B},
number = 15,
volume = 98,
place = {United States},
year = {Mon Oct 15 00:00:00 EDT 2018},
month = {Mon Oct 15 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.98.155436
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Cited by: 4 works
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Figures / Tables:

Fig. 1 Fig. 1: (a) STM topographic image of graphene/h-BN after bombarding the surface with 1 keV hydrogen ions (hydrogen dose procedure #1). Triangular defects with lima-bean-shaped (LB) centers are seen. (b) Zoomed-in topographic image of one triangular defect. (c) STM topographic image of a triangular defect before rotation of the LBmore » center. (d) Same triangular defect as in (c) after rotating the LB center by 120° due to STM tip raster scan. Tunneling parameters: (a) $V$s = 500 mV, $I$ = 2 pA; (b) $V$s = 200 mV, $I$ = 500 pA; (c,d) $V$s = 250 mV, $I$ = 50 pA.« less
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    Works referencing / citing this record:

    A critical assessment on the electron transport through dehydrogenated intrinsically conducting channels in graphane-graphene hybrids
    journal, May 2019

    • de Brito Mota, Fernando; Rivelino, Roberto; Medeiros, Paulo V. C.
    • Materials Research Express, Vol. 6, Issue 8
    • DOI: 10.1088/2053-1591/ab1fb5
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