Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

Wong, Dillon; Wang, Yang; Jin, Wuwei; Tsai, Hsin -Zon; Bostwick, Aaron; Rotenberg, Eli; Kawakami, Roland K.; Zettl, Alex; Mostofi, Arash A.; Lischner, Johannes; Crommie, Michael F.

doi:10.1103/PhysRevB.98.155436

Title: Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

Journal Article · 14 October 2018 · Physical Review B

DOI: https://doi.org/10.1103/PhysRevB.98.155436 · OSTI ID:1478653

Wong, Dillon ^[1]; Wang, Yang ^[2]; Jin, Wuwei ^[3]; Tsai, Hsin -Zon ^[2]; Bostwick, Aaron ^[4]; Rotenberg, Eli ^[4]; Kawakami, Roland K. ^[5]; Zettl, Alex ^[2]; Mostofi, Arash A. ^[3]; Lischner, Johannes ^[3]; Crommie, Michael F. ^[2]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); UC Berkeley
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Imperial College London, London (United Kingdom)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Univ. of California, Riverside, CA (United States); The Ohio State Univ., Columbus, OH (United States)

Here, we have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1478653

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 15 Vol. 98; ISSN 2469-9950; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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