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Title: Multijunction Ga 0.5In 0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy

Abstract

We report the development of Ga 0.5In 0.5P/GaAs monolithic tandem solar cells grown by dynamic hydride vapor phase epitaxy, a III-V semiconductor growth alternative to metalorganic vapor phase epitaxy with the potential to reduce growth costs. The tandem device consists of 3 components: a 1.88 eV band gap (E G) Ga 0.5In 0.5P top cell, a p-Ga 0.5In 0.5P/n-GaAs tunnel junction, and a 1.41 eV rear heterojunction GaAs cell. The open circuit voltage (VOC) and fill factor are 2.40 V and 88.4%, respectively, indicative of high material quality. Electroluminescence measurements show that the individual V OC of the top and bottom cell are 1.40 and 1.00 V, respectively, yielding EG-voltage offsets (W OC) of 0.48 and 0.41 V. The W OC of the top cell is higher because of an unpassivated front surface rather than the bulk material quality. The Ga 0.5In 0.5P top cell limits the current of this series-connected device for this reason to a short-circuit current density (JSC) of 11.16 +/- 0.15 mA/cm 2 yielding an overall efficiency of 23.7% +/- 0.3%. We show through modeling that thinning the emitter will improve the present result, with a clear pathway toward 30% efficiency with the existing material quality.more » This result is a promising step toward the realization of high-efficiency III-V multijunction devices with reduced growth cost.« less

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1478619
Alternate Identifier(s):
OSTI ID: 1454277
Report Number(s):
NREL/JA-5J00-71357
Journal ID: ISSN 1062-7995
Grant/Contract Number:  
AC36-08GO28308; 15/CJ000/07/05; 30290
Resource Type:
Accepted Manuscript
Journal Name:
Progress in Photovoltaics
Additional Journal Information:
Journal Volume: 26; Journal Issue: 11; Journal ID: ISSN 1062-7995
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; hydride vapor phase epitaxy; III-V semiconductors; tandem solar cell

Citation Formats

Schulte, Kevin L., Simon, John, and Ptak, Aaron J. Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy. United States: N. p., 2018. Web. doi:10.1002/pip.3027.
Schulte, Kevin L., Simon, John, & Ptak, Aaron J. Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy. United States. doi:10.1002/pip.3027.
Schulte, Kevin L., Simon, John, and Ptak, Aaron J. Wed . "Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy". United States. doi:10.1002/pip.3027. https://www.osti.gov/servlets/purl/1478619.
@article{osti_1478619,
title = {Multijunction Ga0.5In0.5P/GaAs solar cells grown by dynamic hydride vapor phase epitaxy},
author = {Schulte, Kevin L. and Simon, John and Ptak, Aaron J.},
abstractNote = {We report the development of Ga0.5In0.5P/GaAs monolithic tandem solar cells grown by dynamic hydride vapor phase epitaxy, a III-V semiconductor growth alternative to metalorganic vapor phase epitaxy with the potential to reduce growth costs. The tandem device consists of 3 components: a 1.88 eV band gap (EG) Ga0.5In0.5P top cell, a p-Ga0.5In0.5P/n-GaAs tunnel junction, and a 1.41 eV rear heterojunction GaAs cell. The open circuit voltage (VOC) and fill factor are 2.40 V and 88.4%, respectively, indicative of high material quality. Electroluminescence measurements show that the individual VOC of the top and bottom cell are 1.40 and 1.00 V, respectively, yielding EG-voltage offsets (WOC) of 0.48 and 0.41 V. The WOC of the top cell is higher because of an unpassivated front surface rather than the bulk material quality. The Ga0.5In0.5P top cell limits the current of this series-connected device for this reason to a short-circuit current density (JSC) of 11.16 +/- 0.15 mA/cm2 yielding an overall efficiency of 23.7% +/- 0.3%. We show through modeling that thinning the emitter will improve the present result, with a clear pathway toward 30% efficiency with the existing material quality. This result is a promising step toward the realization of high-efficiency III-V multijunction devices with reduced growth cost.},
doi = {10.1002/pip.3027},
journal = {Progress in Photovoltaics},
number = 11,
volume = 26,
place = {United States},
year = {2018},
month = {6}
}

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Figures / Tables:

Figure 1 Figure 1: Schematic of the Ga0.5In0.5P/GaAs tandem solar cell analyzed in this study.

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.