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Title: Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides

Authors:
; ; ;
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 121 Journal Issue: 16; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1478571

Refaely-Abramson, Sivan, Qiu, Diana Y., Louie, Steven G., and Neaton, Jeffrey B.. Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides. United States: N. p., Web. doi:10.1103/PhysRevLett.121.167402.
Refaely-Abramson, Sivan, Qiu, Diana Y., Louie, Steven G., & Neaton, Jeffrey B.. Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides. United States. doi:10.1103/PhysRevLett.121.167402.
Refaely-Abramson, Sivan, Qiu, Diana Y., Louie, Steven G., and Neaton, Jeffrey B.. 2018. "Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides". United States. doi:10.1103/PhysRevLett.121.167402.
@article{osti_1478571,
title = {Defect-Induced Modification of Low-Lying Excitons and Valley Selectivity in Monolayer Transition Metal Dichalcogenides},
author = {Refaely-Abramson, Sivan and Qiu, Diana Y. and Louie, Steven G. and Neaton, Jeffrey B.},
abstractNote = {},
doi = {10.1103/PhysRevLett.121.167402},
journal = {Physical Review Letters},
number = 16,
volume = 121,
place = {United States},
year = {2018},
month = {10}
}

Works referenced in this record:

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