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Title: Thermal and transport properties of U 3Si 2

Abstract

Here, we have studied U 3Si 2 by means of the heat capacity, electrical resistivity, Seebeck and Hall effects, and thermal conductivity in the temperature range 2-300 K and in magnetic fields up to 9 T. All the results obtained point to delocalized nature of 5f-electrons in this material. The low temperature heat capacity is enhanced (γ el ~ 150 mJ/mol-K 2) and shows an upturn in Cp/ T (T), characteristic of spin fluctuations. The thermal conductivity of U 3Si 2 is ~8.5 W/m-K at room temperature and we show that the lattice part of the total thermal conductivity is small, with electrons dominating heat transport above 300 K.

Authors:
 [1];  [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]
  1. Idaho National Lab. (INL), Idaho Falls, ID (United States)
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1478507
Report Number(s):
INL/JOU-17-42333-Rev000
Journal ID: ISSN 0022-3115
Grant/Contract Number:  
AC07-05ID14517
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 508; Journal Issue: C; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS; 36 MATERIALS SCIENCE; U3Si2; nuclear fuel; uranium sequisilicide; thermal conductivity; Electrical transport

Citation Formats

Antonio, Daniel J., Shrestha, Keshav, Harp, Jason M., Adkins, Cynthia A., Zhang, Yongfeng, Carmack, Jon, and Gofryk, Krzysztof. Thermal and transport properties of U3Si2. United States: N. p., 2018. Web. doi:10.1016/j.jnucmat.2018.05.036.
Antonio, Daniel J., Shrestha, Keshav, Harp, Jason M., Adkins, Cynthia A., Zhang, Yongfeng, Carmack, Jon, & Gofryk, Krzysztof. Thermal and transport properties of U3Si2. United States. doi:10.1016/j.jnucmat.2018.05.036.
Antonio, Daniel J., Shrestha, Keshav, Harp, Jason M., Adkins, Cynthia A., Zhang, Yongfeng, Carmack, Jon, and Gofryk, Krzysztof. Mon . "Thermal and transport properties of U3Si2". United States. doi:10.1016/j.jnucmat.2018.05.036. https://www.osti.gov/servlets/purl/1478507.
@article{osti_1478507,
title = {Thermal and transport properties of U3Si2},
author = {Antonio, Daniel J. and Shrestha, Keshav and Harp, Jason M. and Adkins, Cynthia A. and Zhang, Yongfeng and Carmack, Jon and Gofryk, Krzysztof},
abstractNote = {Here, we have studied U3Si2 by means of the heat capacity, electrical resistivity, Seebeck and Hall effects, and thermal conductivity in the temperature range 2-300 K and in magnetic fields up to 9 T. All the results obtained point to delocalized nature of 5f-electrons in this material. The low temperature heat capacity is enhanced (γel ~ 150 mJ/mol-K2) and shows an upturn in Cp/T (T), characteristic of spin fluctuations. The thermal conductivity of U3Si2 is ~8.5 W/m-K at room temperature and we show that the lattice part of the total thermal conductivity is small, with electrons dominating heat transport above 300 K.},
doi = {10.1016/j.jnucmat.2018.05.036},
journal = {Journal of Nuclear Materials},
number = C,
volume = 508,
place = {United States},
year = {2018},
month = {5}
}

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Cited by: 4 works
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Figures / Tables:

Figure 1 Figure 1: The temperature dependence of the electrical resistivity of U3Si2. Left inset: the tetragonal unit cell of U3Si2, showing the 2 unique uranium sites. Right inset: electrical resistivity of U3Si2 from this work (solid cyan line) compared to that from ref. [6] (dotted black), ref. [8] (dashed red) andmore » the single room temperature value from ref. [14] (blue star).« less

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.