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Title: Silicon photomultipliers radiation damage and recovery via high temperature annealing

Abstract

The performance of Silicon Photomultipliers (SiPMs) from several vendors are characterized before and after exposure of up to 10 10 neutron/cm 2 dosage. Collectively, we firmly established that the typical orders of magnitude increase in dark current upon neutron irradiation can be lowered substantially after processing them with a thermal annealing procedure, and single-photon detection are to some extent recovered at room temperature. Furthermore, we found no significant difference on neutron damaged behavior when SiPMs are irradiated at room temperature or in liquid nitrogen.

Authors:
 [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1477958
Report Number(s):
BNL-209190-2018-JAAM
Journal ID: ISSN 1748-0221
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Instrumentation
Additional Journal Information:
Journal Volume: 13; Journal Issue: 10; Journal ID: ISSN 1748-0221
Publisher:
Institute of Physics (IOP)
Country of Publication:
United States
Language:
English
Subject:
07 ISOTOPES AND RADIATION SOURCES; Photon detectors for UV; visible and IR photons (solid-state) (PIN diodes, APDs, Si- PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc); Radiation damage evaluation methods; Radiation damage to detector materials (solid state)

Citation Formats

Tsang, Thomas. Silicon photomultipliers radiation damage and recovery via high temperature annealing. United States: N. p., 2018. Web. doi:10.1088/1748-0221/13/10/P10019.
Tsang, Thomas. Silicon photomultipliers radiation damage and recovery via high temperature annealing. United States. doi:10.1088/1748-0221/13/10/P10019.
Tsang, Thomas. Mon . "Silicon photomultipliers radiation damage and recovery via high temperature annealing". United States. doi:10.1088/1748-0221/13/10/P10019. https://www.osti.gov/servlets/purl/1477958.
@article{osti_1477958,
title = {Silicon photomultipliers radiation damage and recovery via high temperature annealing},
author = {Tsang, Thomas},
abstractNote = {The performance of Silicon Photomultipliers (SiPMs) from several vendors are characterized before and after exposure of up to 1010 neutron/cm2 dosage. Collectively, we firmly established that the typical orders of magnitude increase in dark current upon neutron irradiation can be lowered substantially after processing them with a thermal annealing procedure, and single-photon detection are to some extent recovered at room temperature. Furthermore, we found no significant difference on neutron damaged behavior when SiPMs are irradiated at room temperature or in liquid nitrogen.},
doi = {10.1088/1748-0221/13/10/P10019},
journal = {Journal of Instrumentation},
number = 10,
volume = 13,
place = {United States},
year = {2018},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Figures / Tables:

Figure 1 Figure 1: Representative neutron radiation damage effects on SiPMs, (a) linear increase in dark current with dosage, single-photoelectron spectrum (b) before, and (c) after irradiation, illustrating a typical good single-photoelectron spectrum and the loss of its single-photoelectron detection capability, respectively. However, their photodetection efficiency - peak on the envelope ofmore » the histogram (Poisson distribution), remains largely unchanged and is centered at 2 to 3 photoelectrons.« less

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Works referenced in this record:

Radiation damage studies of silicon photomultipliers
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  • Bohn, P.; Clough, A.; Hazen, E.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 598, Issue 3
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Silicon Photomultiplier characterization and radiation damage investigation for high energy particle physics applications
journal, March 2014


Neutron radiation damage and recovery studies of SiPMs
journal, December 2016


Radiation hardness tests of SiPMs for the JLab Hall D Barrel calorimeter
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  • Qiang, Yi; Zorn, Carl; Barbosa, Fernando
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 698
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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.