On the role of electro-migration in the evolution of radiation damage in nanostructured ionic materials

Samin, Adib Jamil; Andersson, Anders David Ragnar; Holby, Edward F.; Uberuaga, Blas P.

doi:10.1016/j.elecom.2018.09.010

Title: On the role of electro-migration in the evolution of radiation damage in nanostructured ionic materials

Abstract

We report that radiation resistant materials are needed for a large number of applications. One route to enhancing radiation resistance is to introduce a high density of defect sinks such as grain boundaries. However, there are still important questions regarding the role of grain boundaries in enhancing radiation tolerance, particularly in ionic materials. Experiments have found large improvements in the amorphization resistance of oxides at temperatures where defect mobilities are too low to easily reach the boundaries. Standard reaction-diffusion models are inadequate in explaining this behavior. Here, we examine the role of electro-migration in the overall transport of irradiation-induced defects in ionic systems. We find that electro-migration can have a large impact on the steady state point defect concentrations as compared to models that do not include the effect of electro-migration. In particular, defect concentrations can change by nearly seven orders of magnitude for certain conditions. Finally, we conclude that radiation tolerance in nanocrystalline ionic ceramics will be driven both by enhanced sink density via small grain sizes and, critically, the effects of electro-migration induced by charge segregation to grain boundaries.

Authors:

^[1];

^[1]

Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Publication Date:: 2018-09-25

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1477669

Alternate Identifier(s):: OSTI ID: 1637048

Report Number(s):: LA-UR-18-25848
Journal ID: ISSN 1388-2481

Grant/Contract Number:: AC52-06NA25396

Resource Type:: Accepted Manuscript

Journal Name:: Electrochemistry Communications

Additional Journal Information:: Journal Volume: 96; Journal Issue: C; Journal ID: ISSN 1388-2481

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Radiation damage; Electro-migration; Ionic materials; Computer modeling

Citation Formats


                    Samin, Adib Jamil, Andersson, Anders David Ragnar, Holby, Edward F., and Uberuaga, Blas P. On the role of electro-migration in the evolution of radiation damage in nanostructured ionic materials.  United States: N. p., 2018. 
Web.  doi:10.1016/j.elecom.2018.09.010.

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                    Samin, Adib Jamil, Andersson, Anders David Ragnar, Holby, Edward F., & Uberuaga, Blas P. On the role of electro-migration in the evolution of radiation damage in nanostructured ionic materials.  United States.  https://doi.org/10.1016/j.elecom.2018.09.010

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                    Samin, Adib Jamil, Andersson, Anders David Ragnar, Holby, Edward F., and Uberuaga, Blas P. Tue .  
"On the role of electro-migration in the evolution of radiation damage in nanostructured ionic materials".  United States.  https://doi.org/10.1016/j.elecom.2018.09.010.  https://www.osti.gov/servlets/purl/1477669.

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@article{osti_1477669,

  title        = {On the role of electro-migration in the evolution of radiation damage in nanostructured ionic materials},

  author       = {Samin, Adib Jamil and Andersson, Anders David Ragnar and Holby, Edward F. and Uberuaga, Blas P.},

  abstractNote = {We report that radiation resistant materials are needed for a large number of applications. One route to enhancing radiation resistance is to introduce a high density of defect sinks such as grain boundaries. However, there are still important questions regarding the role of grain boundaries in enhancing radiation tolerance, particularly in ionic materials. Experiments have found large improvements in the amorphization resistance of oxides at temperatures where defect mobilities are too low to easily reach the boundaries. Standard reaction-diffusion models are inadequate in explaining this behavior. Here, we examine the role of electro-migration in the overall transport of irradiation-induced defects in ionic systems. We find that electro-migration can have a large impact on the steady state point defect concentrations as compared to models that do not include the effect of electro-migration. In particular, defect concentrations can change by nearly seven orders of magnitude for certain conditions. Finally, we conclude that radiation tolerance in nanocrystalline ionic ceramics will be driven both by enhanced sink density via small grain sizes and, critically, the effects of electro-migration induced by charge segregation to grain boundaries.},

  doi          = {10.1016/j.elecom.2018.09.010},

  journal      = {Electrochemistry Communications},

  number       = C,

  volume       = 96,

  place        = {United States},

  year         = {2018},

  month        = {9}

}

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Table 1: The values of the parameters used in this study. The parameters are defined in the text.

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