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Title: Feasibility of hard X-ray imaging using monolithic active pixel sensors (MAPS)

Abstract

Silicon detectors have been widely used in high energy physics (HEP) experiments. The outstanding properties of silicon detectors include radiation hardness, small material budget, fine spatial resolution, high speed and low cost. Here we report initial results of using a single-bit Monolithic Active Pixel Sensor (MAPS), a leading candidate for the next generation trackers in high luminosity colliders, for hard X-ray imaging. The MAPS responses to X-ray with different energies are obtained and compared with simulation. The observed cluster sizes are larger than that predicted by the Continuous Slowing Down Approximation (CSDA) model, indicating that the charge diffusion process might play an important in the MAPS response to low energy electrons. This work paves the way towards multiple layer ultrafast silicon sensor applications in synchrotrons and XFEL beamlines.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [3];  [3];  [3]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Argonne National Lab. (ANL), Lemont, IL (United States)
  3. California Inst. of Technology (CalTech), Pasadena, CA (United States)
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC). Nuclear Physics (NP) (SC-26); USDOE Office of Science (SC), Nuclear Physics (NP)
OSTI Identifier:
1477668
Alternate Identifier(s):
OSTI ID: 1606504; OSTI ID: 1776902
Report Number(s):
LA-UR-18-25502
Journal ID: ISSN 0168-9002
Grant/Contract Number:  
AC52-06NA25396; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Additional Journal Information:
Journal Volume: 954; Conference: 2018 Symposium on Radiation Measurements and Applications (SORMA XVII), Ann Arborm MI (United States), 11-14 Jun 2018; Journal ID: ISSN 0168-9002
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Silicon detector; Monolithic active pixel sensor; Hard X-ray imaging

Citation Formats

Li, Xuan, Wang, Zhehui, Chu, Pinghan, da Silva, Cesar, Brooks, Melynda, O’Shaughnessy, Christopher M., Morris, Chris, Liu, Ming, Uemura, Sho, Demarteau, Marcel, Wagner, Robert, Xie, Junqi, Zhu, Ren-Yuan, Zhang, Liyuan, and Hu, Chen. Feasibility of hard X-ray imaging using monolithic active pixel sensors (MAPS). United States: N. p., 2018. Web. https://doi.org/10.1016/j.nima.2018.09.078.
Li, Xuan, Wang, Zhehui, Chu, Pinghan, da Silva, Cesar, Brooks, Melynda, O’Shaughnessy, Christopher M., Morris, Chris, Liu, Ming, Uemura, Sho, Demarteau, Marcel, Wagner, Robert, Xie, Junqi, Zhu, Ren-Yuan, Zhang, Liyuan, & Hu, Chen. Feasibility of hard X-ray imaging using monolithic active pixel sensors (MAPS). United States. https://doi.org/10.1016/j.nima.2018.09.078
Li, Xuan, Wang, Zhehui, Chu, Pinghan, da Silva, Cesar, Brooks, Melynda, O’Shaughnessy, Christopher M., Morris, Chris, Liu, Ming, Uemura, Sho, Demarteau, Marcel, Wagner, Robert, Xie, Junqi, Zhu, Ren-Yuan, Zhang, Liyuan, and Hu, Chen. Thu . "Feasibility of hard X-ray imaging using monolithic active pixel sensors (MAPS)". United States. https://doi.org/10.1016/j.nima.2018.09.078. https://www.osti.gov/servlets/purl/1477668.
@article{osti_1477668,
title = {Feasibility of hard X-ray imaging using monolithic active pixel sensors (MAPS)},
author = {Li, Xuan and Wang, Zhehui and Chu, Pinghan and da Silva, Cesar and Brooks, Melynda and O’Shaughnessy, Christopher M. and Morris, Chris and Liu, Ming and Uemura, Sho and Demarteau, Marcel and Wagner, Robert and Xie, Junqi and Zhu, Ren-Yuan and Zhang, Liyuan and Hu, Chen},
abstractNote = {Silicon detectors have been widely used in high energy physics (HEP) experiments. The outstanding properties of silicon detectors include radiation hardness, small material budget, fine spatial resolution, high speed and low cost. Here we report initial results of using a single-bit Monolithic Active Pixel Sensor (MAPS), a leading candidate for the next generation trackers in high luminosity colliders, for hard X-ray imaging. The MAPS responses to X-ray with different energies are obtained and compared with simulation. The observed cluster sizes are larger than that predicted by the Continuous Slowing Down Approximation (CSDA) model, indicating that the charge diffusion process might play an important in the MAPS response to low energy electrons. This work paves the way towards multiple layer ultrafast silicon sensor applications in synchrotrons and XFEL beamlines.},
doi = {10.1016/j.nima.2018.09.078},
journal = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},
number = ,
volume = 954,
place = {United States},
year = {2018},
month = {9}
}

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Figures / Tables:

Fig. 1 Fig. 1: The proof-of-concept experiment setup using silicon sensors with a ‘‘LANL’’ logo collimator. The silicon sensor options include the ALICE MAPS and the Pixelink pixel sensor, other detector techniques are considered and will be included in future tests.

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.