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Title: A single electron transistor charge sensor in strong rf fields

Authors:
 [1] ;  [2] ;  [1]
  1. Sandia National Laboratories, P.O. Box 5800-1423, Albuquerque, New Mexico 87185, USA
  2. Sandia National Laboratories, P.O. Box 5800-1423, Albuquerque, New Mexico 87185, USA, Center for Integrated Nanotechnologies, Sandia National Labs, Albuquerque, New Mexico 87183, USA
Publication Date:
Grant/Contract Number:
LDRD #191210
Type:
Publisher's Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Name: AIP Advances Journal Volume: 8 Journal Issue: 10; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1477519

Lewis, R. M., Harris, C. T., and Shaner, E. A.. A single electron transistor charge sensor in strong rf fields. United States: N. p., Web. doi:10.1063/1.5043212.
Lewis, R. M., Harris, C. T., & Shaner, E. A.. A single electron transistor charge sensor in strong rf fields. United States. doi:10.1063/1.5043212.
Lewis, R. M., Harris, C. T., and Shaner, E. A.. 2018. "A single electron transistor charge sensor in strong rf fields". United States. doi:10.1063/1.5043212.
@article{osti_1477519,
title = {A single electron transistor charge sensor in strong rf fields},
author = {Lewis, R. M. and Harris, C. T. and Shaner, E. A.},
abstractNote = {},
doi = {10.1063/1.5043212},
journal = {AIP Advances},
number = 10,
volume = 8,
place = {United States},
year = {2018},
month = {10}
}

Works referenced in this record:

Offset masks for lift‐off photoprocessing
journal, September 1977
  • Dolan, G. J.
  • Applied Physics Letters, Vol. 31, Issue 5, p. 337-339
  • DOI: 10.1063/1.89690