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Title: Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

Abstract

Here, we report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.

Authors:
 [1];  [1];  [1];  [2];  [2];  [1];  [1];  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Arkansas, Fayetteville, AR (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1477432
Report Number(s):
[SAND-2018-6967J]
[Journal ID: ISSN 2159-6859; 665160]
Grant/Contract Number:  
[AC04-94AL85000]
Resource Type:
Accepted Manuscript
Journal Name:
MRS Communications
Additional Journal Information:
[ Journal Volume: 8; Journal Issue: 4]; Journal ID: ISSN 2159-6859
Publisher:
Materials Research Society - Cambridge University Press
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; III-V; devices; electrical properties; Ga

Citation Formats

Slobodyan, Oleksiy, Smith, Trevor, Flicker, J., Sandoval, S., Matthews, C., van Heukelom, M., Kaplar, Robert, and Atcitty, S. Hard-switching reliability studies of 1200 V vertical GaN PiN diodes. United States: N. p., 2018. Web. doi:10.1557/mrc.2018.204.
Slobodyan, Oleksiy, Smith, Trevor, Flicker, J., Sandoval, S., Matthews, C., van Heukelom, M., Kaplar, Robert, & Atcitty, S. Hard-switching reliability studies of 1200 V vertical GaN PiN diodes. United States. doi:10.1557/mrc.2018.204.
Slobodyan, Oleksiy, Smith, Trevor, Flicker, J., Sandoval, S., Matthews, C., van Heukelom, M., Kaplar, Robert, and Atcitty, S. Fri . "Hard-switching reliability studies of 1200 V vertical GaN PiN diodes". United States. doi:10.1557/mrc.2018.204. https://www.osti.gov/servlets/purl/1477432.
@article{osti_1477432,
title = {Hard-switching reliability studies of 1200 V vertical GaN PiN diodes},
author = {Slobodyan, Oleksiy and Smith, Trevor and Flicker, J. and Sandoval, S. and Matthews, C. and van Heukelom, M. and Kaplar, Robert and Atcitty, S.},
abstractNote = {Here, we report on reliability testing of vertical GaN (v-GaN) devices under continuous switching conditions of 500, 750, and 1000 V. Using a modified double-pulse test circuit, we evaluate 1200 V-rated v-GaN PiN diodes fabricated by Avogy. Forward current–voltage characteristics do not change over the stress period. Under the reverse bias, the devices exhibit an initial rise in leakage current, followed by a slower rate of increase with further stress. The leakage recovers after a day's relaxation which suggests that trapping of carriers in deep states is responsible. Overall, we found the devices to be robust over the range of conditions tested.},
doi = {10.1557/mrc.2018.204},
journal = {MRS Communications},
number = [4],
volume = [8],
place = {United States},
year = {2018},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

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Cited by: 3 works
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Figures / Tables:

Figure 1 Figure 1: v-GaN PiN diode temperature-dependent (a) reverse and (b) forward kV curves.

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