Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
Abstract
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
- Authors:
-
[2];
[4];
[8];
- Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
- Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Diamond Light Source, Didcot (United Kingdom)
- Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
- Ludwig Maximilian Univ., Munich (Germany). Dept. of Chemistry
- Uppsala Univ. (Sweden). Dept. of Physics and Astronomy; Asia Pacific Center for Theoretical Physics, Pohang (Korea, Republic of)
- Univ. of West Bohemia, Plzeň (Czech Republic). New Technologies-Research Center
- Univ. of California, Davis, CA (United States). Dept. of Physics; Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); LBNL Laboratory Directed Research and Development (LDRD) Program; National Agency for Research (ANR) (France); Ministry of Education, Youth and Sports (Czech Republic); German Research Foundation (DFG)
- OSTI Identifier:
- 1477416
- Grant/Contract Number:
- AC02-05CH11231; SC0014697; CZ.02.1.01/0.0/0.0/15.003/0000358
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 9; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; characterization and analytical techniques; electronic properties and materials
Citation Formats
Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., and Fadley, Charles S. Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide. United States: N. p., 2018.
Web. doi:10.1038/s41467-018-05823-z.
Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., & Fadley, Charles S. Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide. United States. doi:10.1038/s41467-018-05823-z.
Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., and Fadley, Charles S. Fri .
"Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide". United States. doi:10.1038/s41467-018-05823-z. https://www.osti.gov/servlets/purl/1477416.
@article{osti_1477416,
title = {Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide},
author = {Nemšák, Slavomír and Gehlmann, Mathias and Kuo, Cheng-Tai and Lin, Shih-Chieh and Schlueter, Christoph and Mlynczak, Ewa and Lee, Tien-Lin and Plucinski, Lukasz and Ebert, Hubert and Di Marco, Igor and Minár, Ján and Schneider, Claus M. and Fadley, Charles S.},
abstractNote = {The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.},
doi = {10.1038/s41467-018-05823-z},
journal = {Nature Communications},
number = ,
volume = 9,
place = {United States},
year = {2018},
month = {8}
}
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Works referencing / citing this record:
High-accuracy bulk electronic bandmapping with eliminated diffraction effects using hard X-ray photoelectron momentum microscopy
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