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Title: Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Abstract

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

Authors:
 [1];  [1]; ORCiD logo [2];  [2];  [3]; ORCiD logo [4];  [3];  [4];  [5];  [6];  [7]; ORCiD logo [8];  [2]
  1. Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
  2. Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  3. Diamond Light Source, Didcot (United Kingdom)
  4. Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
  5. Ludwig Maximilian Univ., Munich (Germany). Dept. of Chemistry
  6. Uppsala Univ. (Sweden). Dept. of Physics and Astronomy; Asia Pacific Center for Theoretical Physics, Pohang (Korea, Republic of)
  7. Univ. of West Bohemia, Plzeň (Czech Republic). New Technologies-Research Center
  8. Univ. of California, Davis, CA (United States). Dept. of Physics; Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); LBNL Laboratory Directed Research and Development (LDRD) Program; National Agency for Research (ANR) (France); Ministry of Education, Youth and Sports (Czech Republic); German Research Foundation (DFG)
OSTI Identifier:
1477416
Grant/Contract Number:  
AC02-05CH11231; SC0014697; CZ.02.1.01/0.0/0.0/15.003/0000358
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; characterization and analytical techniques; electronic properties and materials

Citation Formats

Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., and Fadley, Charles S. Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide. United States: N. p., 2018. Web. doi:10.1038/s41467-018-05823-z.
Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., & Fadley, Charles S. Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide. United States. doi:10.1038/s41467-018-05823-z.
Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., and Fadley, Charles S. Fri . "Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide". United States. doi:10.1038/s41467-018-05823-z. https://www.osti.gov/servlets/purl/1477416.
@article{osti_1477416,
title = {Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide},
author = {Nemšák, Slavomír and Gehlmann, Mathias and Kuo, Cheng-Tai and Lin, Shih-Chieh and Schlueter, Christoph and Mlynczak, Ewa and Lee, Tien-Lin and Plucinski, Lukasz and Ebert, Hubert and Di Marco, Igor and Minár, Ján and Schneider, Claus M. and Fadley, Charles S.},
abstractNote = {The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.},
doi = {10.1038/s41467-018-05823-z},
journal = {Nature Communications},
number = ,
volume = 9,
place = {United States},
year = {2018},
month = {8}
}

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    Works referencing / citing this record:

    High-accuracy bulk electronic bandmapping with eliminated diffraction effects using hard X-ray photoelectron momentum microscopy
    journal, September 2019