Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide
Abstract
The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.
- Authors:
-
[2];
[4];
[8];
- Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
- Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
- Diamond Light Source, Didcot (United Kingdom)
- Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
- Ludwig Maximilian Univ., Munich (Germany). Dept. of Chemistry
- Uppsala Univ. (Sweden). Dept. of Physics and Astronomy; Asia Pacific Center for Theoretical Physics, Pohang (Korea, Republic of)
- Univ. of West Bohemia, Plzeň (Czech Republic). New Technologies-Research Center
- Univ. of California, Davis, CA (United States). Dept. of Physics; Forschungszentrum Julich (Germany). Peter Grünberg Inst. (PGI)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); LBNL Laboratory Directed Research and Development (LDRD) Program; National Agency for Research (ANR) (France); Ministry of Education, Youth and Sports (Czech Republic); German Research Foundation (DFG)
- OSTI Identifier:
- 1477416
- Grant/Contract Number:
- AC02-05CH11231; SC0014697; CZ.02.1.01/0.0/0.0/15.003/0000358
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 9; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; characterization and analytical techniques; electronic properties and materials
Citation Formats
Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., and Fadley, Charles S. Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide. United States: N. p., 2018.
Web. doi:10.1038/s41467-018-05823-z.
Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., & Fadley, Charles S. Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide. United States. https://doi.org/10.1038/s41467-018-05823-z
Nemšák, Slavomír, Gehlmann, Mathias, Kuo, Cheng-Tai, Lin, Shih-Chieh, Schlueter, Christoph, Mlynczak, Ewa, Lee, Tien-Lin, Plucinski, Lukasz, Ebert, Hubert, Di Marco, Igor, Minár, Ján, Schneider, Claus M., and Fadley, Charles S. Fri .
"Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide". United States. https://doi.org/10.1038/s41467-018-05823-z. https://www.osti.gov/servlets/purl/1477416.
@article{osti_1477416,
title = {Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide},
author = {Nemšák, Slavomír and Gehlmann, Mathias and Kuo, Cheng-Tai and Lin, Shih-Chieh and Schlueter, Christoph and Mlynczak, Ewa and Lee, Tien-Lin and Plucinski, Lukasz and Ebert, Hubert and Di Marco, Igor and Minár, Ján and Schneider, Claus M. and Fadley, Charles S.},
abstractNote = {The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.},
doi = {10.1038/s41467-018-05823-z},
journal = {Nature Communications},
number = ,
volume = 9,
place = {United States},
year = {2018},
month = {8}
}
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Works referenced in this record:
Character of states near the Fermi level in (Ga,Mn)As: Impurity to valence band crossover
journal, September 2007
- Jungwirth, T.; Sinova, Jairo; MacDonald, A. H.
- Physical Review B, Vol. 76, Issue 12
Correlation effects in transition metals and their alloys studied using the fully self-consistent KKR-based LSDA + DMFT scheme
journal, June 2011
- Minár, Ján
- Journal of Physics: Condensed Matter, Vol. 23, Issue 25
Exploring the XPS limit in soft and hard x-ray angle-resolved photoemission using a temperature-dependent one-step theory
journal, November 2013
- Braun, J.; Minár, J.; Mankovsky, S.
- Physical Review B, Vol. 88, Issue 20
Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As
journal, May 1999
- Shen, A.; Matsukura, F.; Guo, S. P.
- Journal of Crystal Growth, Vol. 201-202
Resolving CuO chain and plane contributions to the valence band by standing-wave excited hard x-ray photoelectron spectroscopy
journal, August 2015
- Thiess, S.; Lee, T. -L.; Aruta, C.
- Physical Review B, Vol. 92, Issue 7
Identifying the Electronic Character and Role of the Mn States in the Valence Band of (Ga,Mn)As
journal, August 2013
- Fujii, J.; Salles, B. R.; Sperl, M.
- Physical Review Letters, Vol. 111, Issue 9
ESCA studies of molecular core and valence levels in the gas phase
journal, January 1972
- Gelius, U.; Siegbahn, K.
- Faraday Discussions of the Chemical Society, Vol. 54
Direct Measurement of Valence-Charge Asymmetry by X-Ray Standing Waves
journal, January 2000
- Woicik, J. C.; Nelson, E. J.; Pianetta, P.
- Physical Review Letters, Vol. 84, Issue 4
ARPES view on surface and bulk hybridization phenomena in the antiferromagnetic Kondo lattice CeRh2Si2
journal, March 2016
- Patil, S.; Generalov, A.; Güttler, M.
- Nature Communications, Vol. 7, Issue 1
Theory of ferromagnetic (III,Mn)V semiconductors
journal, August 2006
- Jungwirth, T.; Sinova, Jairo; Mašek, J.
- Reviews of Modern Physics, Vol. 78, Issue 3
Calculating condensed matter properties using the KKR-Green's function method—recent developments and applications
journal, August 2011
- Ebert, H.; Ködderitzsch, D.; Minár, J.
- Reports on Progress in Physics, Vol. 74, Issue 9
Site-specific valence-band photoemission study of
journal, August 2002
- Kim, C. -Y.; Bedzyk, M. J.; Nelson, E. J.
- Physical Review B, Vol. 66, Issue 8
Probing bulk electronic structure with hard X-ray angle-resolved photoemission
journal, August 2011
- Gray, A. X.; Papp, C.; Ueda, S.
- Nature Materials, Vol. 10, Issue 10
X-ray standing-wave investigations of valence electronic structure
journal, September 2001
- Woicik, J. C.; Nelson, E. J.; Heskett, D.
- Physical Review B, Vol. 64, Issue 12
PHOTOELECTRON ANGULAR DISTRIBUTION PARAMETERS FOR ELEMENTS Z=1 TO Z=54 IN THE PHOTOELECTRON ENERGY RANGE 100–5000 eV
journal, January 2001
- Trzhaskovskaya, M. B.; Nefedov, V. I.; Yarzhemsky, V. G.
- Atomic Data and Nuclear Data Tables, Vol. 77, Issue 1
First-principles theory of dilute magnetic semiconductors
journal, May 2010
- Sato, K.; Bergqvist, L.; Kudrnovský, J.
- Reviews of Modern Physics, Vol. 82, Issue 2
Electronic structure of (Ga,Mn)As revisited
journal, February 2017
- Kanski, J.; Ilver, L.; Karlsson, K.
- New Journal of Physics, Vol. 19, Issue 2
Electron correlations in MnxGa1–xAs as seen by resonant electron spectroscopy and dynamical mean field theory
journal, October 2013
- Di Marco, I.; Thunström, P.; Katsnelson, M. I.
- Nature Communications, Vol. 4, Issue 1
Energetic and Spatial Bonding Properties from Angular Distributions of Ultraviolet Photoelectrons: Application to the GaAs(110) Surface
journal, December 1997
- Solterbeck, C.; Schattke, W.; Zahlmann-Nowitzki, J. -W.
- Physical Review Letters, Vol. 79, Issue 23
Density functional versus spin-density functional and the choice of correlated subspace in multivariable effective action theories of electronic structure
journal, July 2015
- Park, Hyowon; Millis, Andrew J.; Marianetti, Chris A.
- Physical Review B, Vol. 92, Issue 3
Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission
journal, October 2012
- Gray, A. X.; Minár, J.; Ueda, S.
- Nature Materials, Vol. 11, Issue 11
Valence band photoelectron emission of analyzed with X-ray standing waves
journal, April 2010
- Thiess, Sebastian; Lee, Tien-Lin; Bottin, François
- Solid State Communications, Vol. 150, Issue 13-14
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave fluorescence
journal, December 2006
- Holý, V.; Matěj, Z.; Pacherová, O.
- Physical Review B, Vol. 74, Issue 24
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
journal, July 1996
- Ohno, H.; Shen, A.; Matsukura, F.
- Applied Physics Letters, Vol. 69, Issue 3
Dilute ferromagnetic semiconductors: Physics and spintronic structures
journal, March 2014
- Dietl, Tomasz; Ohno, Hideo
- Reviews of Modern Physics, Vol. 86, Issue 1
Unveiling the impurity band induced ferromagnetism in the magnetic semiconductor (Ga,Mn)As
journal, May 2014
- Kobayashi, Masaki; Muneta, Iriya; Takeda, Yukiharu
- Physical Review B, Vol. 89, Issue 20
Energetic and Spatial Bonding Properties from Angular Distributions of Ultraviolet Photoelectrons: Application to the GaAs(110) Surface
text, January 1997
- Solterbeck, C.; Schattke, W.; Zahlmann-Nowitzki, J. -W.
- Deutsches Elektronen-Synchrotron, DESY, Hamburg
On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover
text, January 2007
- Jungwirth, T.; Sinova, Jairo; MacDonald, A. H.
- arXiv
Electron correlations in Mn$_x$Ga$_{1-x}$As as seen by resonant electron spectroscopy and dynamical mean field theory
text, January 2012
- Di Marco, I.; Thunström, P.; Katsnelson, M. I.
- arXiv
Identifying the electronic character and role of the Mn states in the valence band of (Ga,Mn)As
text, January 2013
- Fujii, J.; Salles, B. R.; Sperl, M.
- arXiv
Density functional versus spin-density functional and the choice of correlated subspace in multi-variable effective action theories of electronic structure
preprint, January 2015
- Park, Hyowon; Millis, Andrew J.; Marianetti, Chris A.
- arXiv
Theory of ferromagnetic (III,Mn)V semiconductors
text, January 2006
- Jungwirth, T.; Sinova, Jairo; Masek, J.
- arXiv
Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
text, January 2006
- Holy, V.; Matej, Z.; Pacherova, O.
- arXiv
Energetic and spatial bonding properties from angular distributions of ultraviolet photoelectrons: application to the GaAs(110) surface
text, January 1997
- Solterbeck, C.; Schattke, W.; Zahlmann-Nowitzki, J. -W.
- arXiv
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Electron‐ and X‐Ray Spectroscopies of Organic Charge‐Transfer Complexes
journal, March 2019
- Medjanik, Katerina; Elmers, Hans‐Joachim; Schönhense, Gerd
- physica status solidi (b), Vol. 256, Issue 9
Proposal for a photoelectron spectroscopy and microscopy beamline (0.5–11 keV) at the High Energy Photon Source
journal, February 2019
- Tang, Kun; Zheng, Lei; Wang, Jia-Ou
- Journal of Synchrotron Radiation, Vol. 26, Issue 2
High-accuracy bulk electronic bandmapping with eliminated diffraction effects using hard X-ray photoelectron momentum microscopy
text, January 2019
- Babenkov, S.; Medjanik, K.; Vasilyev, D.
- Deutsches Elektronen-Synchrotron, DESY, Hamburg
Progress in HAXPES performance combining full-field k-imaging with time-of-flight recording
text, January 2019
- Medjanik, K.; Babenkov, S. V.; Chernov, S.
- Deutsches Elektronen-Synchrotron, DESY, Hamburg
Progress in HAXPES performance combining full-field k -imaging with time-of-flight recording
journal, November 2019
- Medjanik, K.; Babenkov, S. V.; Chernov, S.
- Journal of Synchrotron Radiation, Vol. 26, Issue 6
High-accuracy bulk electronic bandmapping with eliminated diffraction effects using hard X-ray photoelectron momentum microscopy
journal, September 2019
- Babenkov, S.; Medjanik, K.; Vasilyev, D.
- Communications Physics, Vol. 2, Issue 1