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Title: Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime

Abstract

Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility twodimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than , 6 x 10 11cm -2, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magnetoresistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward siliconcompatible spintronic devices.

Authors:
 [1];  [2];  [2];  [2];  [1];  [1];  [3]; ORCiD logo [2]
  1. National Taiwan Univ., Taipei (Taiwan)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. National Taiwan Univ., Taipei (Taiwan); National Nano Device Labs., Hsinchu (Taiwan)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1477314
Alternate Identifier(s):
OSTI ID: 1474007
Report Number(s):
SAND-2018-10483J
Journal ID: ISSN 2040-3364; 668122
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 44; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Chou, C. -T., Jacobson, N. T., Moussa, J. E., Baczewski, A. D., Chuang, Y., Liu, C. -Y., Li, J. -Y., and Lu, T. M. Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime. United States: N. p., 2018. Web. doi:10.1039/C8NR05677C.
Chou, C. -T., Jacobson, N. T., Moussa, J. E., Baczewski, A. D., Chuang, Y., Liu, C. -Y., Li, J. -Y., & Lu, T. M. Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime. United States. doi:10.1039/C8NR05677C.
Chou, C. -T., Jacobson, N. T., Moussa, J. E., Baczewski, A. D., Chuang, Y., Liu, C. -Y., Li, J. -Y., and Lu, T. M. Tue . "Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime". United States. doi:10.1039/C8NR05677C. https://www.osti.gov/servlets/purl/1477314.
@article{osti_1477314,
title = {Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime},
author = {Chou, C. -T. and Jacobson, N. T. and Moussa, J. E. and Baczewski, A. D. and Chuang, Y. and Liu, C. -Y. and Li, J. -Y. and Lu, T. M.},
abstractNote = {Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin transport, where the spin precession length is shorter than the mean free path such that the gate-controlled spin precession is not randomized by disorder. In this letter, we report the observation of a gate-induced crossover from weak localization to weak anti-localization in the magneto-resistance of a high-mobility twodimensional hole gas in a strained germanium quantum well. From the magneto-resistance, we extract the phase-coherence time, spin-orbit precession time, spin-orbit energy splitting, and cubic Rashba coefficient over a wide density range. The mobility and the mean free path increase with increasing hole density, while the spin precession length decreases due to increasingly stronger spin-orbit coupling. As the density becomes larger than , 6 x 1011cm-2, the spin precession length becomes shorter than the mean free path, and the system enters the ballistic spin transport regime. We also report here the numerical methods and code developed for calculating the magnetoresistance in the ballistic regime, where the commonly used HLN and ILP models for analyzing weak localization and anti-localization are not valid. These results pave the way toward siliconcompatible spintronic devices.},
doi = {10.1039/C8NR05677C},
journal = {Nanoscale},
number = 44,
volume = 10,
place = {United States},
year = {2018},
month = {9}
}

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Figures / Tables:

TABLE I TABLE I: Comparison of the values of $β$3 obtained from different groups for a Ge 2DHG system.

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Works referenced in this record:

Spin-orbit interaction in a two-dimensional electron gas in a InAs/AlSb quantum well with gate-controlled electron density
journal, May 1998


Narrow heavy-hole cyclotron resonances split by the cubic Rashba spin-orbit interaction in strained germanium quantum wells
journal, July 2015


The Effect of Spin Splitting on the Metallic Behavior of a Two-Dimensional System
journal, March 1999


Weak localization in thin films
journal, May 1984


Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas
journal, November 2014

  • Morrison, C.; Wiśniewski, P.; Rhead, S. D.
  • Applied Physics Letters, Vol. 105, Issue 18
  • DOI: 10.1063/1.4901107

Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
journal, August 2010


Spin-orbit interaction in InSb nanowires
journal, May 2015


All-electric quantum point contact spin-polarizer
journal, September 2009


Quantum Spin Hall Effect in Graphene
journal, November 2005


Spin orientation of holes in quantum wells
journal, October 2008


Observation of spin precession in GaAs inversion layers using antilocalization
journal, January 1992

  • Dresselhaus, P. D.; Papavassiliou, C. M. A.; Wheeler, R. G.
  • Physical Review Letters, Vol. 68, Issue 1
  • DOI: 10.1103/PhysRevLett.68.106

Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
journal, February 1980

  • Hikami, S.; Larkin, A. I.; Nagaoka, Y.
  • Progress of Theoretical Physics, Vol. 63, Issue 2
  • DOI: 10.1143/PTP.63.707

Electronic analog of the electro‐optic modulator
journal, February 1990

  • Datta, Supriyo; Das, Biswajit
  • Applied Physics Letters, Vol. 56, Issue 7
  • DOI: 10.1063/1.102730

Anomalous Rashba spin splitting in two-dimensional hole systems
journal, March 2002


Experimental Evidence of Cubic Rashba Effect in an Inversion-Symmetric Oxide
journal, May 2012


Strong spin-orbit interactions and weak antilocalization in carbon-doped p -type Ga As Al x Ga 1 x As heterostructures
journal, March 2008


Anomalous spin precession and spin Hall effect in semiconductor quantum wells
journal, July 2013


Hole weak anti-localization in a strained-Ge surface quantum well
journal, August 2017

  • Mizokuchi, R.; Torresani, P.; Maurand, R.
  • Applied Physics Letters, Vol. 111, Issue 6
  • DOI: 10.1063/1.4997411

Negative differential Rashba effect in two-dimensional hole systems
journal, October 2004

  • Habib, B.; Tutuc, E.; Melinte, S.
  • Applied Physics Letters, Vol. 85, Issue 15
  • DOI: 10.1063/1.1806543

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained- Ge / SiGe Quantum Well
journal, August 2014


Generic New Platform for Topological Quantum Computation Using Semiconductor Heterostructures
journal, January 2010


Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor System
journal, February 2005


Nonmonotonically tunable Rashba spin-orbit coupling by multiple-band filling control in SrTiO 3 -based interfacial d -electron gases
journal, August 2015


Majorana fermions in a tunable semiconductor device
journal, March 2010


Tunable Spin-Splitting and Spin-Resolved Ballistic Transport in GaAs/AlGaAs Two-Dimensional Holes
journal, August 1998


Gate-Controlled Spin-Orbit Quantum Interference Effects in Lateral Transport
journal, February 2003


Spin-Orbit Coupling Effects in Zinc Blende Structures
journal, October 1955


Theory of interface roughness scattering in quantum wells
journal, July 1998

  • Penner, U.; Rücker, H.; Yassievich, I. N.
  • Semiconductor Science and Technology, Vol. 13, Issue 7
  • DOI: 10.1088/0268-1242/13/7/009

Spin Hall Effect
journal, August 1999


Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure
journal, February 1997


Gate-Controlled Spin-Orbit Interaction in a Parabolic GaAs / AlGaAs Quantum Well
journal, July 2009


Nondiffusive weak localization in two-dimensional systems with spin-orbit splitting of the spectrum
journal, October 2006


Effects of surface tunneling of two-dimensional hole gases in undoped Ge/GeSi heterostructures
journal, September 2017


All-electric all-semiconductor spin field-effect transistors
journal, December 2014

  • Chuang, Pojen; Ho, Sheng-Chin; Smith, L. W.
  • Nature Nanotechnology, Vol. 10, Issue 1
  • DOI: 10.1038/nnano.2014.296

Control of Spin Precession in a Spin-Injected Field Effect Transistor
journal, September 2009


Spin-Filter Device Based on the Rashba Effect Using a Nonmagnetic Resonant Tunneling Diode
journal, March 2002


Spin-Transistor Electronics: An Overview and Outlook
journal, December 2010


    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.