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Title: Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

Dynamic compression of GaAs quantum wells was achieved to examine the direct-to-indirect transition in a reduced dimension semiconductor structure under uniaxial strain conditions. Our results show that the transformation deviates significantly from the electronic structure predictions using bulk deformation potentials. This finding is attributed to the suppression of real-space type-II transitions by quantum state interactions due to the presence of large anisotropic strains.
Authors:
 [1] ;  [2] ; ORCiD logo [1]
  1. Institute for Shock Physics and Department of Physics, Washington State University, Pullman, Washington 99164, USA
  2. National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA
Publication Date:
Report Number(s):
NREL/JA-5J00-71420
Journal ID: ISSN 0003-6951
Grant/Contract Number:
AC36-08GO28308; NA0000970
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 7; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States); Washington State Univ., Pullman, WA (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S); USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP) (NA-10)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; electronic structure; gallium arsenide; III-V semiconductors; quantum theory; semiconducting gallium; semiconducting gallium arsenide; strain; photoluminescence spectroscopy; electronic bandstructure; quantum wells
OSTI Identifier:
1476912
Alternate Identifier(s):
OSTI ID: 1464316; OSTI ID: 1468524; OSTI ID: 1476907

Grivickas, P., Geisz, J. F., and Gupta, Y. M.. Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells. United States: N. p., Web. doi:10.1063/1.5038723.
Grivickas, P., Geisz, J. F., & Gupta, Y. M.. Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells. United States. doi:10.1063/1.5038723.
Grivickas, P., Geisz, J. F., and Gupta, Y. M.. 2018. "Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells". United States. doi:10.1063/1.5038723.
@article{osti_1476912,
title = {Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells},
author = {Grivickas, P. and Geisz, J. F. and Gupta, Y. M.},
abstractNote = {Dynamic compression of GaAs quantum wells was achieved to examine the direct-to-indirect transition in a reduced dimension semiconductor structure under uniaxial strain conditions. Our results show that the transformation deviates significantly from the electronic structure predictions using bulk deformation potentials. This finding is attributed to the suppression of real-space type-II transitions by quantum state interactions due to the presence of large anisotropic strains.},
doi = {10.1063/1.5038723},
journal = {Applied Physics Letters},
number = 7,
volume = 113,
place = {United States},
year = {2018},
month = {8}
}

Works referenced in this record:

Band parameters for III�V compound semiconductors and their alloys
journal, June 2001
  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156