skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on September 25, 2019

Title: Nanosecond Melting and Recrystallization in Shock-Compressed Silicon

In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ~31–33 GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.
Authors:
; ;
Publication Date:
Grant/Contract Number:
NA0002007; NA0002442; AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 121; Journal Issue: 13; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Research Org:
Washington State Univ., Pullman, WA (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
mechanical & acoustical properties; phase diagrams; pressure effects; semiconductors; single crystal materials; crystal structures; X-ray diffraction
OSTI Identifier:
1476641
Alternate Identifier(s):
OSTI ID: 1473727; OSTI ID: 1476640