Nanosecond Melting and Recrystallization in Shock-Compressed Silicon
Abstract
In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ~31–33 GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.
- Authors:
-
- Washington State Univ., Pullman, WA (United States). Inst. for Shock Physics
- Washington State Univ., Pullman, WA (United States). Inst. for Shock Physics. Dept. of Physics and Astronomy
- Publication Date:
- Research Org.:
- Washington State Univ., Pullman, WA (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
- OSTI Identifier:
- 1476641
- Alternate Identifier(s):
- OSTI ID: 1473727; OSTI ID: 1476640
- Grant/Contract Number:
- NA0002442; NA0002007; AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 121; Journal Issue: 13; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; mechanical & acoustical properties; phase diagrams; pressure effects; semiconductors; single crystal materials; crystal structures; X-ray diffraction
Citation Formats
Turneaure, Stefan J., Sharma, Surinder M., and Gupta, Y. M. Nanosecond Melting and Recrystallization in Shock-Compressed Silicon. United States: N. p., 2018.
Web. doi:10.1103/PhysRevLett.121.135701.
Turneaure, Stefan J., Sharma, Surinder M., & Gupta, Y. M. Nanosecond Melting and Recrystallization in Shock-Compressed Silicon. United States. https://doi.org/10.1103/PhysRevLett.121.135701
Turneaure, Stefan J., Sharma, Surinder M., and Gupta, Y. M. Tue .
"Nanosecond Melting and Recrystallization in Shock-Compressed Silicon". United States. https://doi.org/10.1103/PhysRevLett.121.135701. https://www.osti.gov/servlets/purl/1476641.
@article{osti_1476641,
title = {Nanosecond Melting and Recrystallization in Shock-Compressed Silicon},
author = {Turneaure, Stefan J. and Sharma, Surinder M. and Gupta, Y. M.},
abstractNote = {In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ~31–33 GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.},
doi = {10.1103/PhysRevLett.121.135701},
journal = {Physical Review Letters},
number = 13,
volume = 121,
place = {United States},
year = {2018},
month = {9}
}
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Figures / Tables:
Figure 1: (a) Configuration for simultaneous in situ, XRD and continuum measurements in shock compressed Si. (b) Representative Si/LiF velocity histories for impact stresses of 32.7 GPa and 47.8 GPa. For impact stress larger than 39 GPa, the phase transformation wave overdrives the inelastic shock. (c) and (d) Representative XRDmore »
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