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Title: Nanosecond Melting and Recrystallization in Shock-Compressed Silicon

Abstract

In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ~31–33 GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.

Authors:
; ;
Publication Date:
Research Org.:
Washington State Univ., Pullman, WA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC)
OSTI Identifier:
1476641
Alternate Identifier(s):
OSTI ID: 1473727; OSTI ID: 1476640
Grant/Contract Number:  
NA0002007; NA0002442; AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 121; Journal Issue: 13; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; mechanical & acoustical properties; phase diagrams; pressure effects; semiconductors; single crystal materials; crystal structures; X-ray diffraction

Citation Formats

Turneaure, Stefan J., Sharma, Surinder M., and Gupta, Y. M. Nanosecond Melting and Recrystallization in Shock-Compressed Silicon. United States: N. p., 2018. Web. doi:10.1103/PhysRevLett.121.135701.
Turneaure, Stefan J., Sharma, Surinder M., & Gupta, Y. M. Nanosecond Melting and Recrystallization in Shock-Compressed Silicon. United States. doi:10.1103/PhysRevLett.121.135701.
Turneaure, Stefan J., Sharma, Surinder M., and Gupta, Y. M. Sat . "Nanosecond Melting and Recrystallization in Shock-Compressed Silicon". United States. doi:10.1103/PhysRevLett.121.135701. https://www.osti.gov/servlets/purl/1476641.
@article{osti_1476641,
title = {Nanosecond Melting and Recrystallization in Shock-Compressed Silicon},
author = {Turneaure, Stefan J. and Sharma, Surinder M. and Gupta, Y. M.},
abstractNote = {In situ, time-resolved, x-ray diffraction and simultaneous continuum measurements were used to examine structural changes in Si shock compressed to 54 GPa. Shock melting was unambiguously established above ~31–33 GPa, through the vanishing of all sharp crystalline diffraction peaks and the emergence of a single broad diffraction ring. Reshock from the melt boundary results in rapid (nanosecond) recrystallization to the hexagonal-close-packed Si phase and further supports melting. Our results also provide new constraints on the high-temperature, high-pressure Si phase diagram.},
doi = {10.1103/PhysRevLett.121.135701},
journal = {Physical Review Letters},
number = 13,
volume = 121,
place = {United States},
year = {2018},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 5 works
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Figures / Tables:

Figure 1 Figure 1: (a) Configuration for simultaneous in situ, XRD and continuum measurements in shock compressed Si. (b) Representative Si/LiF velocity histories for impact stresses of 32.7 GPa and 47.8 GPa. For impact stress larger than 39 GPa, the phase transformation wave overdrives the inelastic shock. (c) and (d) Representative XRDmore » patterns recorded from shocked Si(100). LiF impactors and windows were (100) oriented single crystals and the LiF(100) Laue XRD spots were masked before integrating diffraction patterns azimuthally. Times listed in XRD patterns are relative to impact.« less

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.