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Title: High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering

Abstract

p-type transparent conducting Cu alloyed ZnS thin films from Cu$$_{{x}}$$ Zn$$_{{1-x}}$$ S targets ($x = 0.1$ , 0.2, 0.3, 0.4, and 0.5) were deposited on glass substrates via radio frequency sputtering. x-ray diffraction and TEM–SAED analysis show that all the films have sphalerite ZnS as the majority crystalline phase. In addition, films with 30% and 40% Cu show the presence of increasing amounts of crystalline Cu2S phase. Conductivity values ≥400 S $${\rm cm}^{-1}$$ were obtained for the films having 30% and 40% Cu, with the maximum conductivity of 752 S $${\rm cm}^{-1}$$ obtained for the film with 40% Cu. Temperature dependent electrical transport measurements indicate metallic as well as degenerate hole conductivity in the deposited films. The reflection-corrected transmittance of this Cu alloyed ZnS (40% Cu) film was determined to be ≥75% at 550 nm. In conclusion, the transparent conductor figure of merit ($$\Phi_{{\rm TC}}$$ ) of the Cu alloyed ZnS (40% Cu), calculated with the average value of transmittance between 1.5 to 2.5 eV, was ≈276 $$\mu{\rm S}$$ .

Authors:
ORCiD logo [1];  [2];  [3];  [4]; ORCiD logo [5]; ORCiD logo [6]; ORCiD logo [5]
  1. Indian Institute of Technology Bombay, Mumbai (India); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Xi'an Jiaotong Univ., Shaanxi (People's Republic of China)
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Fudan Univ., Shanghai (People's Republic of China)
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  5. Indian Institute of Technology Bombay, Mumbai (India)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of California, Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1476574
Grant/Contract Number:  
[AC02-05CH11231]
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Physics. D, Applied Physics
Additional Journal Information:
[ Journal Volume: 50; Journal Issue: 50; Related Information: © 2017 IOP Publishing Ltd.]; Journal ID: ISSN 0022-3727
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; transparent conductor; hole conductor; RF sputtering; figure of merit

Citation Formats

Maurya, Sandeep Kumar, Liu, Ya, Xu, Xiaojie, Woods-Robinson, Rachel, Das, Chandan, Ager, III, Joel W., and Balasubramaniam, K. R. High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering. United States: N. p., 2017. Web. doi:10.1088/1361-6463/aa95b3.
Maurya, Sandeep Kumar, Liu, Ya, Xu, Xiaojie, Woods-Robinson, Rachel, Das, Chandan, Ager, III, Joel W., & Balasubramaniam, K. R. High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering. United States. doi:10.1088/1361-6463/aa95b3.
Maurya, Sandeep Kumar, Liu, Ya, Xu, Xiaojie, Woods-Robinson, Rachel, Das, Chandan, Ager, III, Joel W., and Balasubramaniam, K. R. Thu . "High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering". United States. doi:10.1088/1361-6463/aa95b3. https://www.osti.gov/servlets/purl/1476574.
@article{osti_1476574,
title = {High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering},
author = {Maurya, Sandeep Kumar and Liu, Ya and Xu, Xiaojie and Woods-Robinson, Rachel and Das, Chandan and Ager, III, Joel W. and Balasubramaniam, K. R.},
abstractNote = {p-type transparent conducting Cu alloyed ZnS thin films from Cu$_{{x}}$ Zn$_{{1-x}}$ S targets ($x = 0.1$ , 0.2, 0.3, 0.4, and 0.5) were deposited on glass substrates via radio frequency sputtering. x-ray diffraction and TEM–SAED analysis show that all the films have sphalerite ZnS as the majority crystalline phase. In addition, films with 30% and 40% Cu show the presence of increasing amounts of crystalline Cu2S phase. Conductivity values ≥400 S ${\rm cm}^{-1}$ were obtained for the films having 30% and 40% Cu, with the maximum conductivity of 752 S ${\rm cm}^{-1}$ obtained for the film with 40% Cu. Temperature dependent electrical transport measurements indicate metallic as well as degenerate hole conductivity in the deposited films. The reflection-corrected transmittance of this Cu alloyed ZnS (40% Cu) film was determined to be ≥75% at 550 nm. In conclusion, the transparent conductor figure of merit ($\Phi_{{\rm TC}}$ ) of the Cu alloyed ZnS (40% Cu), calculated with the average value of transmittance between 1.5 to 2.5 eV, was ≈276 $\mu{\rm S}$ .},
doi = {10.1088/1361-6463/aa95b3},
journal = {Journal of Physics. D, Applied Physics},
number = [50],
volume = [50],
place = {United States},
year = {2017},
month = {11}
}

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