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Title: Memristive devices from ZnO nanowire bundles and meshes

Journal Article · · Applied Physics Letters
DOI: https://doi.org/10.1063/1.5008265 · OSTI ID:1476392
 [1];  [2];  [3]; ORCiD logo [1];  [3];  [4];  [3];  [1]; ORCiD logo [3];  [5];  [6]
  1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
  2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy; Univ. of Memphis, Memphis, TN (United States). Dept. of Physics and Materials Science
  3. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
  4. Vanderbilt Univ., Nashville, TN (United States). Vanderbilt Inst. of Nanoscale Science and Engineering
  5. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
  6. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
+ Show Author Affiliations

Here, we report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed with the same materials, these devices exhibit different characteristics. Nanowire-bundle memristors have small On/Off ratios and feature stable hysteresis under X-ray irradiation. Nanowire-mesh memristors show large On/Off ratios and multiple distinct states. We attribute the switching in bundle nanowires to the modification of the Schottky barrier by the mobile Ag ions and the stability of hysteresis to the ability of the bundles to retain Ag in the alleys between nanowires, as confirmed by first-principles calculations and energy dispersive x-ray measurements. For nanowire-mesh memristors, the high On/Off ratio leads us to attribute the switching mechanism to the formation and dissolution of Ag bridges in the nano-gaps at the intersections of nanowires.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Organization:
USDOE; National Science Foundation (NSF); USDOE Office of Science (SC)
Grant/Contract Number:
AC05-00OR22725; DMR-1207241; FG02-09ER46554; ACI-1053575
OSTI ID:
1476392
Alternate ID(s):
OSTI ID: 1399278; OSTI ID: 1597849
Journal Information:
Applied Physics Letters, Vol. 111, Issue 15; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Cited By (2)

Recent Developments and Perspectives for Memristive Devices Based on Metal Oxide Nanowires journal November 2018
A resistive switching memory device with a negative differential resistance at room temperature journal July 2018

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42 ENGINEERING
77 NANOSCIENCE AND NANOTECHNOLOGY
memristor
x-rays
metal oxides
magnetic materials
density functional theory
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transistors
nanowires
first-principle calculations
semiconductor devices