skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Memristive devices from ZnO nanowire bundles and meshes

Abstract

Here, we report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed with the same materials, these devices exhibit different characteristics. Nanowire-bundle memristors have small On/Off ratios and feature stable hysteresis under X-ray irradiation. Nanowire-mesh memristors show large On/Off ratios and multiple distinct states. We attribute the switching in bundle nanowires to the modification of the Schottky barrier by the mobile Ag ions and the stability of hysteresis to the ability of the bundles to retain Ag in the alleys between nanowires, as confirmed by first-principles calculations and energy dispersive x-ray measurements. For nanowire-mesh memristors, the high On/Off ratio leads us to attribute the switching mechanism to the formation and dissolution of Ag bridges in the nano-gaps at the intersections of nanowires.

Authors:
 [1];  [2];  [3]; ORCiD logo [1];  [3];  [4];  [3];  [1]; ORCiD logo [3];  [5];  [6]
  1. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy
  2. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy; Univ. of Memphis, Memphis, TN (United States). Dept. of Physics and Materials Science
  3. Vanderbilt Univ., Nashville, TN (United States). Dept. of Electrical Engineering and Computer Science
  4. Vanderbilt Univ., Nashville, TN (United States). Vanderbilt Inst. of Nanoscale Science and Engineering
  5. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science
  6. Vanderbilt Univ., Nashville, TN (United States). Dept. of Physics and Astronomy and Dept. of Electrical Engineering and Computer Science; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Materials Science & Technology Division
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC)
OSTI Identifier:
1476392
Alternate Identifier(s):
OSTI ID: 1399278; OSTI ID: 1597849
Grant/Contract Number:  
AC05-00OR22725; DMR-1207241; FG02-09ER46554; ACI-1053575
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 15; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 77 NANOSCIENCE AND NANOTECHNOLOGY; memristor; x-rays; metal oxides; magnetic materials; density functional theory; electric power; transistors; nanowires; first-principle calculations; semiconductor devices

Citation Formats

Puzyrev, Y. S., Shen, X., Zhang, Cher Xuan, Hachtel, Jordan A., Ni, Kai, Choi, Bo K., Zhang, Enxia -X., Ovchinnikov, Oleg S., Schrimpf, R. D., Fleetwood, D. M., and Pantelides, Sokrates T. Memristive devices from ZnO nanowire bundles and meshes. United States: N. p., 2017. Web. doi:10.1063/1.5008265.
Puzyrev, Y. S., Shen, X., Zhang, Cher Xuan, Hachtel, Jordan A., Ni, Kai, Choi, Bo K., Zhang, Enxia -X., Ovchinnikov, Oleg S., Schrimpf, R. D., Fleetwood, D. M., & Pantelides, Sokrates T. Memristive devices from ZnO nanowire bundles and meshes. United States. doi:10.1063/1.5008265.
Puzyrev, Y. S., Shen, X., Zhang, Cher Xuan, Hachtel, Jordan A., Ni, Kai, Choi, Bo K., Zhang, Enxia -X., Ovchinnikov, Oleg S., Schrimpf, R. D., Fleetwood, D. M., and Pantelides, Sokrates T. Fri . "Memristive devices from ZnO nanowire bundles and meshes". United States. doi:10.1063/1.5008265. https://www.osti.gov/servlets/purl/1476392.
@article{osti_1476392,
title = {Memristive devices from ZnO nanowire bundles and meshes},
author = {Puzyrev, Y. S. and Shen, X. and Zhang, Cher Xuan and Hachtel, Jordan A. and Ni, Kai and Choi, Bo K. and Zhang, Enxia -X. and Ovchinnikov, Oleg S. and Schrimpf, R. D. and Fleetwood, D. M. and Pantelides, Sokrates T.},
abstractNote = {Here, we report two types of memristive devices made of ZnO nanowire assemblies and Ag electrodes: nanowire-bundle and nanowire-mesh memristors. Although constructed with the same materials, these devices exhibit different characteristics. Nanowire-bundle memristors have small On/Off ratios and feature stable hysteresis under X-ray irradiation. Nanowire-mesh memristors show large On/Off ratios and multiple distinct states. We attribute the switching in bundle nanowires to the modification of the Schottky barrier by the mobile Ag ions and the stability of hysteresis to the ability of the bundles to retain Ag in the alleys between nanowires, as confirmed by first-principles calculations and energy dispersive x-ray measurements. For nanowire-mesh memristors, the high On/Off ratio leads us to attribute the switching mechanism to the formation and dissolution of Ag bridges in the nano-gaps at the intersections of nanowires.},
doi = {10.1063/1.5008265},
journal = {Applied Physics Letters},
number = 15,
volume = 111,
place = {United States},
year = {2017},
month = {10}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

The missing memristor found
journal, May 2008

  • Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.
  • Nature, Vol. 453, Issue 7191
  • DOI: 10.1038/nature06932

Nanoionics-based resistive switching memories
journal, November 2007

  • Waser, Rainer; Aono, Masakazu
  • Nature Materials, Vol. 6, Issue 11, p. 833-840
  • DOI: 10.1038/nmat2023

Resistive Switching in Single Epitaxial ZnO Nanoislands
journal, January 2012

  • Qi, Jing; Olmedo, Mario; Ren, Jingjian
  • ACS Nano, Vol. 6, Issue 2
  • DOI: 10.1021/nn204809a

A ZnO nanowire resistive switch
journal, September 2013

  • Karthik, K. R. G.; Ramanujam Prabhakar, Rajiv; Hai, L.
  • Applied Physics Letters, Vol. 103, Issue 12
  • DOI: 10.1063/1.4821994

Nudged elastic band method for finding minimum energy paths of transitions
conference, November 2011

  • JÓNsson, Hannes; Mills, Greg; Jacobsen, Karsten W.
  • Proceedings of the International School of Physics, Classical and Quantum Dynamics in Condensed Phase Simulations
  • DOI: 10.1142/9789812839664_0016

Memristive devices and systems
journal, January 1976


Zinc oxide nanostructures: growth, properties and applications
journal, June 2004


Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
journal, December 2009

  • Lee, Seunghyup; Kim, Heejin; Yun, Dong-Jin
  • Applied Physics Letters, Vol. 95, Issue 26
  • DOI: 10.1063/1.3280864

Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
journal, January 2008

  • Chang, Wen-Yuan; Lai, Yen-Chao; Wu, Tai-Bor
  • Applied Physics Letters, Vol. 92, Issue 2
  • DOI: 10.1063/1.2834852

Molecularly inherent voltage-controlled conductance switching
journal, January 2005

  • Blum, Amy Szuchmacher; Kushmerick, James G.; Long, David P.
  • Nature Materials, Vol. 4, Issue 2
  • DOI: 10.1038/nmat1309

Reproducible switching effect in thin oxide films for memory applications
journal, July 2000

  • Beck, A.; Bednorz, J. G.; Gerber, Ch.
  • Applied Physics Letters, Vol. 77, Issue 1
  • DOI: 10.1063/1.126902

A Cu/ZnO Nanowire/Cu Resistive Switching Device
journal, July 2013

  • Li, Lijie; Zhang, Yan; Chew, Zhengjun
  • Nano-Micro Letters, Vol. 5, Issue 3
  • DOI: 10.1007/BF03353745

Electric-pulse-induced reversible resistance change effect in magnetoresistive films
journal, May 2000

  • Liu, S. Q.; Wu, N. J.; Ignatiev, A.
  • Applied Physics Letters, Vol. 76, Issue 19
  • DOI: 10.1063/1.126464

A New Theoretical Insight Into ZnO NWs Memristive Behavior
journal, March 2016


$\hbox{HfO}_{x}$ Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode
journal, July 2009


Vacancy breathing by grain boundaries—a mechanism of memristive switching in polycrystalline oxides
journal, September 2013

  • Shen, Xiao; Puzyrev, Yevgeniy S.; Pantelides, Sokrates T.
  • MRS Communications, Vol. 3, Issue 3
  • DOI: 10.1557/mrc.2013.32

High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity
journal, May 2016

  • Shen, Xiao; Pennycook, Timothy J.; Hernandez-Martin, David
  • Advanced Materials Interfaces, Vol. 3, Issue 16
  • DOI: 10.1002/admi.201600086

Highly stable resistive switching on monocrystalline ZnO
journal, February 2010


2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO 3
journal, March 2015

  • Shen, Xiao; Yin, Kuibo; Puzyrev, Yevgeniy S.
  • Advanced Electronic Materials, Vol. 1, Issue 5
  • DOI: 10.1002/aelm.201500019

Inhomogeneous Electron Gas
journal, November 1964


Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965


Polar Charges Induced Electric Hysteresis of ZnO Nano/Microwire for Fast Data Storage
journal, July 2011

  • Song, Jinhui; Zhang, Yan; Xu, Chen
  • Nano Letters, Vol. 11, Issue 7
  • DOI: 10.1021/nl2011966