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Title: Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi 4 Te 6

Abstract

The monoclinic narrow-gap (~0.08 eV) semiconductor CsBi 4Te 6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi 4Te 6 single crystals with Na and K. Substitution of Na in CsBi 4Te 6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi 3.67Te 6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi 4Te 6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenidebased superconductors, was obtained in Cs 0.82K 0.18Bi 4Te 6 with a high upper critical field of ~15 T. Lastly, these findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.

Authors:
ORCiD logo [1];  [2]; ORCiD logo [2]; ORCiD logo [3]; ORCiD logo [2];  [2]; ORCiD logo [1]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  3. Northwestern Univ., Evanston, IL (United States). Dept. of Chemistry
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); Keck Foundation; International Institute for Nanotechnology (IIN); State of Illinois; USDOE
OSTI Identifier:
1475560
Alternate Identifier(s):
OSTI ID: 1483660
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Chemistry of Materials
Additional Journal Information:
Journal Volume: 30; Journal Issue: 15; Journal ID: ISSN 0897-4756
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Chen, Haijie, Claus, Helmut, Bao, Jin-Ke, Stoumpos, Constantinos C., Chung, Duck Young, Kwok, Wai-Kwong, and Kanatzidis, Mercouri G. Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4 Te6. United States: N. p., 2018. Web. doi:10.1021/acs.chemmater.8b02030.
Chen, Haijie, Claus, Helmut, Bao, Jin-Ke, Stoumpos, Constantinos C., Chung, Duck Young, Kwok, Wai-Kwong, & Kanatzidis, Mercouri G. Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4 Te6. United States. doi:10.1021/acs.chemmater.8b02030.
Chen, Haijie, Claus, Helmut, Bao, Jin-Ke, Stoumpos, Constantinos C., Chung, Duck Young, Kwok, Wai-Kwong, and Kanatzidis, Mercouri G. Wed . "Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4 Te6". United States. doi:10.1021/acs.chemmater.8b02030. https://www.osti.gov/servlets/purl/1475560.
@article{osti_1475560,
title = {Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4 Te6},
author = {Chen, Haijie and Claus, Helmut and Bao, Jin-Ke and Stoumpos, Constantinos C. and Chung, Duck Young and Kwok, Wai-Kwong and Kanatzidis, Mercouri G.},
abstractNote = {The monoclinic narrow-gap (~0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying CsBi4Te6 single crystals with Na and K. Substitution of Na in CsBi4Te6 with doping levels ≥0.39 and of K with ≥0.63 transforms the original monoclinic structure (p-type) to the orthorhombic RbBi3.67Te6-type structure (n-type). When the K level is ≤0.18, the monoclinic structure type of CsBi4Te6 is retained. Transport and magnetic measurements on all as-synthesized doped single crystals demonstrate type-II, bulk superconductivity. A maximal superconducting transition at 5.07 K, which is the highest temperature in bismuth chalcogenidebased superconductors, was obtained in Cs0.82K0.18Bi4Te6 with a high upper critical field of ~15 T. Lastly, these findings suggest superconductivity may be induced by proper doping in narrow-gap semiconductors.},
doi = {10.1021/acs.chemmater.8b02030},
journal = {Chemistry of Materials},
number = 15,
volume = 30,
place = {United States},
year = {2018},
month = {6}
}

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Works referencing / citing this record:

CSD 1866230: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018


CSD 1866231: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018


CSD 1866232: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018


CSD 1866233: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018


CSD 1866234: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018


CSD 1866235: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018


CSD 1866236: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018


CSD 1866237: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018


CSD 1866238: Experimental Crystal Structure Determination: Non-CSD Structure
dataset, September 2018